CY62136FV30LL-45BVXIT Infineon

CY62136FV30 MoBL 2-Mbit (128 K 16) Static RAM 2-Mbit (128 K 16) Static RAM Features Functional Description Very high speed: 45 ns The CY62136FV30 is a high performance CMOS static RAM organized as 128K words by 16 bits. This device features Temperature ranges advanced circuit design to provide ultra low active current. This Industrial: 40 C to +85 C is ideal for providing More Battery Life (MoBL ) in portable Automotive-A: 40 C to +85 C applications such as cellular telephones. The device also has an Automotive-E: 40 C to +125 C automatic power down feature that significantly reduces power Wide voltage range: 2.20 V to 3.60 V consumption by 90 percent when addresses are not toggling. Placing the device into standby mode reduces power Pin compatible with CY62136V, CY62136CV30/CV33, and consumption by more than 99 percent when deselected (CE CY62136EV30 HIGH). The input and output pins (I/O through I/O ) are placed 0 15 Ultra low standby power in a high impedance state when the device is deselected (CE Typical standby current: 1 A HIGH), the outputs are disabled (OE HIGH), both Byte High Maximum standby current: 5 A (Industrial) Enable and Byte Low Enable are disabled (BHE, BLE HIGH) or Ultra low active power during a write operation (CE LOW and WE LOW). Typical active current: 1.6 mA at f = 1 MHz (45 ns speed) Write to the device by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data Easy memory expansion with CE and OE features from I/O pins (I/O through I/O ) is written into the location 0 7 Automatic power down when deselected specified on the address pins (A through A ). If Byte High 0 16 Complementary metal oxide semiconductor (CMOS) for Enable (BHE) is LOW, then data from I/O pins (I/O through 8 optimum speed and power I/O ) is written into the location specified on the address pins 15 (A through A ). 0 16 Available in Pb-free 48-ball very fine-pitch ball grid array (VFBGA) and 44-pin thin small outline package (TSOP) II Read from the device by taking Chip Enable (CE) and Output packages Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins appears on I/O to I/O . If 0 7 Byte High Enable (BHE) is LOW, then data from memory appears on I/O to I/O . See the Truth Table on page 11 for a 8 15 complete description of read and write modes. Logic Block Diagram DATA IN DRIVERS A 10 A 9 A 8 A 7 A 128 K x 16 6 A 5 RAM Array I/O I/O 0 7 A 4 A 3 I/O I/O 8 15 A 2 A 1 A 0 BHE COLUMN DECODER WE CE OE BLE Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 001-08402 Rev. *L Revised August 22, 2013 ROW DECODER A 11 A 12 A 13 A 14 A 15 A 16 SENSE AMPS CY62136FV30 MoBL Contents Product Portfolio ..............................................................3 Ordering Information ...................................................... 12 Pin Configuration .............................................................3 Ordering Code Definitions ......................................... 12 Maximum Ratings .............................................................4 Package Diagrams .......................................................... 13 Operating Range ...............................................................4 Acronyms ........................................................................15 Electrical Characteristics .................................................4 Document Conventions ................................................. 15 Capacitance ......................................................................5 Units of Measure ....................................................... 15 Thermal Resistance ..........................................................5 Document History Page ................................................. 16 AC Test Loads and Waveforms .......................................5 Sales, Solutions, and Legal Information ...................... 17 Data Retention Characteristics .......................................6 Worldwide Sales and Design Support ....................... 17 Data Retention Waveform ................................................6 Products ....................................................................17 Switching Characteristics ................................................7 PSoC Solutions ...................................................... 17 Switching Waveforms ......................................................8 Cypress Developer Community ................................. 17 Truth Table ......................................................................11 Technical Support ..................................................... 17 Document Number: 001-08402 Rev. *L Page 2 of 17