X-On Electronics has gained recognition as a prominent supplier of CY62136FV30LL-45BVXIT SRAM across the USA, India, Europe, Australia, and various other global locations. CY62136FV30LL-45BVXIT SRAM are a product manufactured by Infineon. We provide cost-effective solutions for SRAM, ensuring timely deliveries around the world.

CY62136FV30LL-45BVXIT Infineon

CY62136FV30LL-45BVXIT electronic component of Infineon
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Part No.CY62136FV30LL-45BVXIT
Manufacturer: Infineon
Category: SRAM
Description: SRAM 2Mb 3V 45ns 128K x 16 LP SRAM
Datasheet: CY62136FV30LL-45BVXIT Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2000: USD 3.1185 ea
Line Total: USD 6237 
Availability - 0
MOQ: 2000  Multiples: 2000
Pack Size: 2000
Availability Price Quantity
0
Ship by Wed. 20 Nov to Tue. 26 Nov
MOQ : 2000
Multiples : 2000
2000 : USD 3.1185

0
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ : 2000
Multiples : 2000
2000 : USD 3.3996
4000 : USD 3.355
10000 : USD 3.355

   
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We are delighted to provide the CY62136FV30LL-45BVXIT from our SRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CY62136FV30LL-45BVXIT and other electronic components in the SRAM category and beyond.

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CY62136FV30 MoBL 2-Mbit (128 K 16) Static RAM 2-Mbit (128 K 16) Static RAM Features Functional Description Very high speed: 45 ns The CY62136FV30 is a high performance CMOS static RAM organized as 128K words by 16 bits. This device features Temperature ranges advanced circuit design to provide ultra low active current. This Industrial: 40 C to +85 C is ideal for providing More Battery Life (MoBL ) in portable Automotive-A: 40 C to +85 C applications such as cellular telephones. The device also has an Automotive-E: 40 C to +125 C automatic power down feature that significantly reduces power Wide voltage range: 2.20 V to 3.60 V consumption by 90 percent when addresses are not toggling. Placing the device into standby mode reduces power Pin compatible with CY62136V, CY62136CV30/CV33, and consumption by more than 99 percent when deselected (CE CY62136EV30 HIGH). The input and output pins (I/O through I/O ) are placed 0 15 Ultra low standby power in a high impedance state when the device is deselected (CE Typical standby current: 1 A HIGH), the outputs are disabled (OE HIGH), both Byte High Maximum standby current: 5 A (Industrial) Enable and Byte Low Enable are disabled (BHE, BLE HIGH) or Ultra low active power during a write operation (CE LOW and WE LOW). Typical active current: 1.6 mA at f = 1 MHz (45 ns speed) Write to the device by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data Easy memory expansion with CE and OE features from I/O pins (I/O through I/O ) is written into the location 0 7 Automatic power down when deselected specified on the address pins (A through A ). If Byte High 0 16 Complementary metal oxide semiconductor (CMOS) for Enable (BHE) is LOW, then data from I/O pins (I/O through 8 optimum speed and power I/O ) is written into the location specified on the address pins 15 (A through A ). 0 16 Available in Pb-free 48-ball very fine-pitch ball grid array (VFBGA) and 44-pin thin small outline package (TSOP) II Read from the device by taking Chip Enable (CE) and Output packages Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins appears on I/O to I/O . If 0 7 Byte High Enable (BHE) is LOW, then data from memory appears on I/O to I/O . See the Truth Table on page 11 for a 8 15 complete description of read and write modes. Logic Block Diagram DATA IN DRIVERS A 10 A 9 A 8 A 7 A 128 K x 16 6 A 5 RAM Array I/O I/O 0 7 A 4 A 3 I/O I/O 8 15 A 2 A 1 A 0 BHE COLUMN DECODER WE CE OE BLE Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 001-08402 Rev. *L Revised August 22, 2013 ROW DECODER A 11 A 12 A 13 A 14 A 15 A 16 SENSE AMPS CY62136FV30 MoBL Contents Product Portfolio ..............................................................3 Ordering Information ...................................................... 12 Pin Configuration .............................................................3 Ordering Code Definitions ......................................... 12 Maximum Ratings .............................................................4 Package Diagrams .......................................................... 13 Operating Range ...............................................................4 Acronyms ........................................................................15 Electrical Characteristics .................................................4 Document Conventions ................................................. 15 Capacitance ......................................................................5 Units of Measure ....................................................... 15 Thermal Resistance ..........................................................5 Document History Page ................................................. 16 AC Test Loads and Waveforms .......................................5 Sales, Solutions, and Legal Information ...................... 17 Data Retention Characteristics .......................................6 Worldwide Sales and Design Support ....................... 17 Data Retention Waveform ................................................6 Products ....................................................................17 Switching Characteristics ................................................7 PSoC Solutions ...................................................... 17 Switching Waveforms ......................................................8 Cypress Developer Community ................................. 17 Truth Table ......................................................................11 Technical Support ..................................................... 17 Document Number: 001-08402 Rev. *L Page 2 of 17

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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