X-On Electronics has gained recognition as a prominent supplier of CY62146ESL-45ZSXIT SRAM across the USA, India, Europe, Australia, and various other global locations. CY62146ESL-45ZSXIT SRAM are a product manufactured by Infineon. We provide cost-effective solutions for SRAM, ensuring timely deliveries around the world.

CY62146ESL-45ZSXIT Infineon

CY62146ESL-45ZSXIT electronic component of Infineon
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Part No.CY62146ESL-45ZSXIT
Manufacturer: Infineon
Category: SRAM
Description: SRAM 4Mb 45ns 256K x 16 Low Power SRAM
Datasheet: CY62146ESL-45ZSXIT Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 7.667 ea
Line Total: USD 7.67 
Availability - 1051
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1051
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 7.667
10 : USD 7.172
25 : USD 6.754
100 : USD 6.281
250 : USD 6.127
500 : USD 5.533
1000 : USD 5.39
2000 : USD 5.324

   
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We are delighted to provide the CY62146ESL-45ZSXIT from our SRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CY62146ESL-45ZSXIT and other electronic components in the SRAM category and beyond.

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CY62146ESL MoBL 4-Mbit (256 K 16) Static RAM 4-Mbit (256 K 16) Static RAM is ideal for providing More Battery Life (MoBL ) in portable Features applications such as cellular telephones. The device also has an automatic power down feature that reduces power consumption Very high speed: 45 ns when addresses are not toggling. Placing the device into standby Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V mode reduces power consumption by more than 99% when deselected (CE HIGH). The input and output pins (I/O through 0 Ultra low standby power I/O ) are placed in a high impedance state when the device is 15 Typical Standby current: 1 A deselected (CE HIGH), the outputs are disabled (OE HIGH), Maximum Standby current: 7 A both Byte High Enable and Byte Low Enable are disabled (BHE, BLE HIGH) or during a write operation (CE LOW and WE LOW). Ultra low active power Typical active current: 2 mA at f = 1 MHz To write to the device, take Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data Easy memory expansion with CE and OE features from I/O pins (I/O through I/O ) is written into the location 0 7 Automatic power down when deselected specified on the address pins (A through A ). If Byte High 0 17 Enable (BHE) is LOW, then data from I/O pins (I/O through 8 Complementary metal oxide semiconductor (CMOS) for I/O ) is written into the location specified on the address pins 15 optimum speed and power (A through A ). 0 17 Available in Pb-free 44-pin thin small outline package (TSOP) II To read from the device, take Chip Enable (CE) and Output package Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory Functional Description location specified by the address pins appears on I/O to I/O . If 0 7 Byte High Enable (BHE) is LOW, then data from memory The CY62146ESL is a high performance CMOS static RAM appears on I/O to I/O . See the Truth Table on page 11 for a 8 15 organized as 256K words by 16 bits. This device features complete description of read and write modes. advanced circuit design to provide ultra low active current. This Logic Block Diagram DATA IN DRIVERS A 10 A 9 A 8 A 7 A 6 256 K 16 A 5 I/O I/O 0 7 A RAM Array 4 A 3 I/O I/O 8 15 A 2 A 1 A 0 COLUMN DECODER BHE WE CE OE BLE Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 001-43142 Rev. *E Revised August 21, 2013 ROW DECODER A 11 A 12 A 13 A 14 A 15 A 16 A 17 SENSE AMPS CY62146ESL MoBL Contents Pin Configurations ...........................................................3 Ordering Information ......................................................12 Product Portfolio ..............................................................3 Ordering Code Definitions .........................................12 Maximum Ratings .............................................................4 Package Diagram ............................................................13 Operating Range ...............................................................4 Acronyms ........................................................................14 Electrical Characteristics .................................................4 Document Conventions .................................................14 Capacitance ......................................................................5 Units of Measure .......................................................14 Thermal Resistance ..........................................................5 Document History Page .................................................15 AC Test Loads and Waveforms .......................................5 Sales, Solutions, and Legal Information ......................16 Data Retention Characteristics .......................................6 Worldwide Sales and Design Support .......................16 Data Retention Waveform ................................................6 Products ....................................................................16 Switching Characteristics ................................................7 PSoC Solutions .......................................................16 Switching Waveforms ......................................................8 Cypress Developer Community .................................16 Truth Table ......................................................................11 Technical Support .....................................................16 Document Number: 001-43142 Rev. *E Page 2 of 16

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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