X-On Electronics has gained recognition as a prominent supplier of CY62146G30-45ZSXA SRAM across the USA, India, Europe, Australia, and various other global locations. CY62146G30-45ZSXA SRAM are a product manufactured by Infineon. We provide cost-effective solutions for SRAM, ensuring timely deliveries around the world.

CY62146G30-45ZSXA Infineon

CY62146G30-45ZSXA electronic component of Infineon
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Part No.CY62146G30-45ZSXA
Manufacturer: Infineon
Category: SRAM
Description: SRAM Micropower SRAMs
Datasheet: CY62146G30-45ZSXA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 8.7074 ea
Line Total: USD 8.71 
Availability - 308
Ship by Tue. 19 Nov to Thu. 21 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
308
Ship by Tue. 19 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 8.7074
10 : USD 8.1573
25 : USD 7.9818
100 : USD 7.2211
270 : USD 7.1157
540 : USD 6.9168
1080 : USD 6.7763
2700 : USD 6.6592
5130 : USD 6.5305

   
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Cnhts
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Mxhts
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We are delighted to provide the CY62146G30-45ZSXA from our SRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CY62146G30-45ZSXA and other electronic components in the SRAM category and beyond.

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CY62146G MoBL Automotive 4-Mbit (256K words 16 bit) Static RAM with Error-Correcting Code (ECC) 4-Mbit (256K words 16 bit) Static RAM with Error-Correcting Code (ECC) Features Functional Description AEC-Q100 qualified CY62146G is high-performance CMOS low-power (MoBL) SRAM devices with embedded ECC. High speed: 45 ns Device is accessed by asserting the chip enable (CE) input LOW. Temperature Range Data writes are performed by asserting the Write Enable (WE) Automotive-A: -40 C to +85 C input LOW, while providing the data on I/O through I/O and 0 15 address on A through A pins. The Byte High Enable (BHE) Ultra-low standby power 0 17 and Byte Low Enable (BLE) inputs control write operations to the Typical standby current: 3.5 A upper and lower bytes of the specified memory location. BHE 1 Embedded ECC for single-bit error correction controls I/O through I/O and BLE controls I/O through I/O . 8 15 0 7 Voltage range: 2.2 V to 3.6 V, 4.5 V to 5.5 V Data reads are performed by asserting the Output Enable (OE) input and providing the required address on the address lines. 1.0-V data retention Read data is accessible on the I/O lines (I/O through I/O ). 0 15 Byte accesses can be performed by asserting the required byte TTL-compatible inputs and outputs enable signal (BHE or BLE) to read either the upper byte or the Pb-free 44-pin TSOP II package lower byte of data from the specified address location. All I/Os (I/O through I/O ) are placed in a HI-Z state when the 0 15 device is deselected (CE HIGH), or control signals are de-asserted (OE, BLE, BHE). The logic block diagram is on page 2. Product Portfolio Power Dissipation Features and Options Operating I (mA) CC Speed Product (see Pin Configuration Range V Range (V) Standby, I (A) CC SB2 (ns) f = f CY62146G on page 4) max 2 2 Typ Max Typ Max CY62146G30 Single Chip Enable Automotive-A 2.2 V3.6 V 45 15 20 3.5 8.7 CY62146G 4.5 V5.5 V Notes 1. This device does not support automatic write-back on error detection. 2. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V =3V (for V range of 2.2 V3.6 V) and V =5V CC CC CC (for V range of 4.5 V5.5 V), T = 25 C. CC A Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 002-03594 Rev. *C Revised November 24, 2017 CY62146G MoBL Automotive Logic Block Diagram CY62146G ECCENCODER INPUTBUFFER A0 A1 A2 A3 I/O I/O MEMORY 0 7 A4 ARRAY A5 I/O I/O 8 15 A6 A7 A8 A9 COLUMNDECODER BHE WE CE OE BLE Document Number: 002-03594 Rev. *C Page 2 of 19 ROWDECODER A10 A11 A12 A13 A14 A15 A16 A17 SENSE AMPLIFIERS ECCDECODER

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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