X-On Electronics has gained recognition as a prominent supplier of CY62146GN30-45ZSXI SRAM across the USA, India, Europe, Australia, and various other global locations. CY62146GN30-45ZSXI SRAM are a product manufactured by Infineon. We provide cost-effective solutions for SRAM, ensuring timely deliveries around the world.

CY62146GN30-45ZSXI Infineon

CY62146GN30-45ZSXI electronic component of Infineon
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Part No.CY62146GN30-45ZSXI
Manufacturer: Infineon
Category: SRAM
Description: Cypress Semiconductor
Datasheet: CY62146GN30-45ZSXI Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 270
Multiples : 1
270 : USD 5.2894
500 : USD 4.7539
1000 : USD 4.5776
2500 : USD 4.4353
N/A

Obsolete
0
MOQ : 135
Multiples : 135
135 : USD 2.7974
270 : USD 2.6855
405 : USD 2.6855
540 : USD 2.6855
N/A

Obsolete
0
MOQ : 270
Multiples : 270
270 : USD 4.6368
540 : USD 4.6126
1080 : USD 4.5885
2700 : USD 4.5643
5130 : USD 4.5161
10260 : USD 4.4919
N/A

Obsolete
   
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RoHS - XON
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Supply Voltage - Max
Supply Voltage - Min
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Supply Current - Max
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Cnhts
Hts Code
Mxhts
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We are delighted to provide the CY62146GN30-45ZSXI from our SRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CY62146GN30-45ZSXI and other electronic components in the SRAM category and beyond.

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CY62146GN MoBL 4-Mbit (256K 16) Static RAM 4-Mbit (256K 16) Static RAM Features Functional Description Very high speed: 45 ns The CY62146GN is a high performance CMOS static RAM organized as 256K words by 16 bits. This device features an Temperature ranges advanced circuit design designed to provide an ultra low active Industrial: 40 C to +85 C current. Ultra low active current is ideal for providing More Battery Life (MoBL ) in portable applications such as cellular Wide voltage range: 2.20 V to 3.60 V and 4.5 V to 5.5 V telephones. The device also has an automatic power down Ultra low standby power feature that significantly reduces power consumption by 80 Typical standby current: 3.5 A percent when addresses are not toggling.The device can also be put into standby mode reducing power consumption by more Maximum standby current: 8.7 A than 99 percent when deselected (CE HIGH). The input and Ultra low active power output pins (I/O through I/O ) are placed in a high impedance 0 15 Typical active current: 3.5 mA at f = 1 MHz state when the device is deselected (CE HIGH), outputs are disabled (OE HIGH), both Byte High Enable and Byte Low Automatic power down when deselected Enable are disabled (BHE, BLE HIGH), or a write operation is in Complementary metal oxide semiconductor (CMOS) for progress (CE LOW and WE LOW). optimum speed and power To write to the device, take Chip Enable (CE) and Write Enable (WE) input LOW. If Byte Low Enable (BLE) is LOW, then data Available in a 44-pin TSOP II and 48-ball VFBGA Packages from I/O pins (I/O through I/O ) is written into the location 0 7 specified on the address pins (A through A ). If Byte High 0 17 Enable (BHE) is LOW, then data from the I/O pins (I/O through 8 I/O ) is written into the location specified on the address pins 15 (A through A ). 0 17 To read from the device, take Chip Enable (CE) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins appears on I/O to I/O . If 0 7 Byte High Enable (BHE) is LOW, then data from memory appears on I/O to I/O . See the Truth Table on page 11 for a 8 15 complete description of read and write modes. Logic Block Diagram DATA IN DRIVERS A 10 A 9 A 8 A 7 A 6 256K x 16 A 5 I/O I/O 0 7 A RAM Array 4 A 3 I/O I/O 8 15 A 2 A 1 A 0 COLUMN DECODER BHE WE CE OE BLE Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 001-95417 Rev. *E Revised December 15, 2017 ROW DECODER A 11 A 12 A 13 A 14 A 15 A 16 A 17 SENSE AMPS CY62146GN MoBL Contents Pin Configurations ...........................................................3 Ordering Information ...................................................... 12 Product Portfolio ..............................................................3 Ordering Code Definitions ......................................... 12 Maximum Ratings .............................................................4 Package Diagrams .......................................................... 13 Operating Range ...............................................................4 Acronyms ........................................................................14 Electrical Characteristics .................................................4 Document Conventions ................................................. 14 Capacitance ......................................................................5 Units of Measure ....................................................... 14 Thermal Resistance ..........................................................5 Document History Page ................................................. 15 AC Test Loads and Waveforms .......................................5 Sales, Solutions, and Legal Information ...................... 16 Data Retention Characteristics .......................................6 Worldwide Sales and Design Support ....................... 16 Data Retention Waveform ................................................6 Products ....................................................................16 Switching Characteristics ................................................7 PSoC Solutions ...................................................... 16 Switching Waveforms ......................................................8 Cypress Developer Community ................................. 16 Truth Table ......................................................................11 Technical Support ..................................................... 16 Document Number: 001-95417 Rev. *E Page 2 of 16

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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