CY62147EV30 MoBL Automotive 4-Mbit (256K 16) Static RAM 4-Mbit (256 K 16) Static RAM current. It is ideal for providing More Battery Life (MoBL ) in Features portable applications such as cellular telephones. The device also has an automatic power down feature that significantly Very high speed: 45 ns reduces power consumption when addresses are not toggling. Temperature ranges Placing the device in standby mode reduces power consumption Automotive-A: 40 C to +85 C by more than 99 percent when deselected (CE HIGH or both BLE Automotive-E: 40 C to +125 C and BHE are HIGH). The input and output pins (I/O through 0 Wide voltage range: 2.20 V to 3.60 V I/O ) are placed in a high-impedance state when: 15 Pin compatible with CY62147DV30 Deselected (CE HIGH) Ultra low standby power Outputs are disabled (OE HIGH) Typical standby current: 1 A Maximum standby current: 7 A (Automotive-A) Both Byte High Enable and Byte Low Enable are disabled (BHE, BLE HIGH) Ultra low active power Typical active current: 2 mA (Automotive-A) at f = 1 MHz Write operation is active (CE LOW and WE LOW) 1 Easy memory expansion with CE and OE features To write to the device, take Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data Automatic power down when deselected from I/O pins (I/O through I/O ) is written into the location 0 7 Complementary metal oxide semiconductor (CMOS) for specified on the address pins (A through A ). If Byte High 0 17 optimum speed and power Enable (BHE) is LOW, then data from I/O pins (I/O through 8 I/O ) is written into the location specified on the address pins 15 Available in Pb-free 48-ball very fine ball grid array (VFBGA) (A through A ). 0 17 (single/dual CE option) and 44-pin thin small outline package To read from the device, take Chip Enable (CE) and Output (TSOP) II packages Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte power-down feature Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins appear on I/O to I/O . If 0 7 Functional Description Byte High Enable (BHE) is LOW, then data from memory appears on I/O to I/O . See the Truth Table on page 12 for a 8 15 The CY62147EV30 is a high-performance CMOS static RAM complete description of read and write modes. (SRAM) organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra low active For a complete list of related resources, click here. Logic Block Diagram DATA IN DRIVERS A 10 A 9 A 8 A 7 A 6 256K x 16 A 5 I/O I/O 0 7 A RAM Array 4 A 3 I/O I/O 8 15 A 2 A 1 A 0 COLUMN DECODER BHE CE POWER DOWN WE BHE 1 CIRCUIT CE BLE OE BLE Note 1. BGA packaged device is offered in single CE and dual CE options. In this data sheet, for a dual CE device, CE refers to the internal logical combination of CE and 1 CE such that when CE is LOW and CE is HIGH, CE is LOW. For all other cases CE is HIGH. 2 1 2 Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 001-66256 Rev. *C Revised April 14, 2016 ROW DECODER A 11 A 12 A 13 A 14 A 15 A 16 A 17 SENSE AMPS CY62147EV30 MoBL Automotive Contents Product Portfolio ..............................................................3 Ordering Information ...................................................... 13 Pin Configurations ...........................................................4 Ordering Code Definitions ......................................... 13 Maximum Ratings .............................................................5 Package Diagrams .......................................................... 14 Operating Range ...............................................................5 Acronyms ........................................................................16 Electrical Characteristics .................................................5 Document Conventions ................................................. 16 Capacitance ......................................................................6 Units of Measure ....................................................... 16 Thermal Resistance ..........................................................6 Document History Page ................................................. 17 AC Test Load and Waveforms .........................................6 Sales, Solutions, and Legal Information ...................... 18 Data Retention Characteristics .......................................7 Worldwide Sales and Design Support ....................... 18 Data Retention Waveform ................................................7 Products ....................................................................18 Switching Characteristics ................................................8 PSoC Solutions ...................................................... 18 Switching Waveforms ......................................................9 Cypress Developer Community ................................. 18 Truth Table ......................................................................12 Technical Support ..................................................... 18 Document Number: 001-66256 Rev. *C Page 2 of 18