X-On Electronics has gained recognition as a prominent supplier of CY62157ELL-55ZSXE SRAM across the USA, India, Europe, Australia, and various other global locations. CY62157ELL-55ZSXE SRAM are a product manufactured by Infineon. We provide cost-effective solutions for SRAM, ensuring timely deliveries around the world.

CY62157ELL-55ZSXE Infineon

CY62157ELL-55ZSXE electronic component of Infineon
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Part No.CY62157ELL-55ZSXE
Manufacturer: Infineon
Category: SRAM
Description: SRAM 8Mb 55ns 512K x 16 Low Power SRAM
Datasheet: CY62157ELL-55ZSXE Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 12.936 ea
Line Total: USD 12.94 
Availability - 627
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
627
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 12.936
10 : USD 12.199
25 : USD 11.913
100 : USD 10.703
270 : USD 10.505

   
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We are delighted to provide the CY62157ELL-55ZSXE from our SRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CY62157ELL-55ZSXE and other electronic components in the SRAM category and beyond.

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CY62157E MoBL 8-Mbit (512 K 16) Static RAM 8-Mbit (512 K 16) Static RAM when deselected (CE HIGH or CE LOW or both BHE and BLE Features 1 2 are HIGH). The input or output pins (I/O through I/O ) are 0 15 placed in a high impedance state when: Very high speed: 45 ns Industrial: 40 C to +85 C Deselected (CE HIGH or CE LOW) 1 2 Automotive-E: 40 C to +125 C Outputs are disabled (OE HIGH) Wide voltage range: 4.5 V5.5 V Both Byte High Enable and Byte Low Enable are disabled Ultra low standby power (BHE, BLE HIGH) Typical standby current: 2 A Write operation is active (CE LOW, CE HIGH and WE LOW) 1 2 Maximum standby current: 8 A (Industrial) To write to the device, take Chip Enable (CE LOW and CE 1 2 Ultra low active power HIGH) and Write Enable (WE) inputs LOW. If Byte Low Enable Typical active current: 1.8 mA at f = 1 MHz (BLE) is LOW, then data from I/O pins (I/O through I/O ), is 0 7 written into the location specified on the address pins (A through Ultra low standby power 0 A ). If Byte High Enable (BHE) is LOW, then data from I/O pins 18 Easy memory expansion with CE , CE and OE features 1 2 (I/O through I/O ) is written into the location specified on the 8 15 address pins (A through A ). 0 18 Automatic power down when deselected To read from the device, take Chip Enable (CE LOW and CE 1 2 CMOS for optimum speed and power HIGH) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data Available in Pb-free 44-pin TSOP II and 48-ball VFBGA from the memory location specified by the address pins appear package on I/O to I/O . If Byte High Enable (BHE) is LOW, then data from 0 7 memory appears on I/O to I/O . See Truth Table on page 12 Functional Description 8 15 for a complete description of read and write modes. The CY62157E is a high performance CMOS static RAM The CY62157E device is suitable for interfacing with processors organized as 512K words by 16 bits. This device features that have TTL I/P levels. It is not suitable for processors that advanced circuit design to provide ultra low active current. This require CMOS I/P levels. Please see Electrical Characteristics is ideal for providing More Battery Life (MoBL ) in portable on page 4 for more details and suggested alternatives. applications. The device also has an automatic power down For a complete list of related documentation, click here. feature that significantly reduces power consumption when addresses are not toggling. Place the device into standby mode Logic Block Diagram DATA IN DRIVERS A 10 A 9 A 8 A 7 A 6 512K x 16 A 5 RAM Array I/O I/O A 0 7 4 A 3 I/O I/O 8 15 A 2 A 1 A 0 COLUMN DECODER CE 2 CE 1 Power Down BHE Circuit CE WE 2 BHE CE 1 OE BLE BLE Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 38-05695 Rev. *N Revised November 9, 2017 ROW DECODER A 11 A 12 A 13 A 14 A 15 A 16 A 17 A 18 SENSE AMPS CY62157E MoBL Contents Product Portfolio ..............................................................3 Ordering Information ...................................................... 13 Pin Configurations ...........................................................3 Ordering Code Definitions ......................................... 13 Maximum Ratings .............................................................4 Package Diagrams .......................................................... 14 Operating Range ...............................................................4 Acronyms ........................................................................16 Electrical Characteristics .................................................4 Document Conventions ................................................. 16 Capacitance ......................................................................5 Units of Measure ....................................................... 16 Thermal Resistance ..........................................................5 Document History Page ................................................. 17 AC Test Loads and Waveforms .......................................5 Sales, Solutions, and Legal Information ...................... 19 Data Retention Characteristics .......................................6 Worldwide Sales and Design Support ....................... 19 Data Retention Waveform ................................................6 Products ....................................................................19 Switching Characteristics ................................................7 PSoC Solutions ...................................................... 19 Switching Waveforms ......................................................8 Cypress Developer Community ................................. 19 Truth Table ......................................................................12 Technical Support ..................................................... 19 Document Number: 38-05695 Rev. *N Page 2 of 19

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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