CY62157EV18 MoBL 8-Mbit (512 K 16) Static RAM 8-bit (512K x 16) Static RAM automatic power down feature that significantly reduces power Features consumption when addresses are not toggling. The device can also be put into standby mode when deselected (CE HIGH or Very high speed: 55 ns 1 CE LOW or both BHE and BLE are HIGH). The input and output 2 Wide voltage range: 1.65 V2.25 V pins (I/O through I/O ) are placed in a high impedance state 0 15 when: Pin compatible with CY62157DV18 and CY62157DV20 Deselected (CE HIGH or CE LOW) 1 2 Ultra low standby power Typical Standby current: 2 A Outputs are disabled (OE HIGH) Maximum Standby current: 8 A Both Byte High Enable and Byte Low Enable are disabled Ultra low active power (BHE, BLE HIGH) or Typical active current: 1.8 mA at f = 1 MHz Write operation is active (CE LOW, CE HIGH and WE LOW). 1 2 Easy memory expansion with CE , CE and OE features 1 2 Write to the device by taking Chip Enables (CE LOW and CE 1 2 HIGH) and Write Enable (WE) input LOW. If Byte Low Enable Automatic power down when deselected (BLE) is LOW, then data from I/O pins (I/O through I/O ), is 0 7 Complementary metal oxide semiconductor (CMOS) for written into the location specified on the address pins (A through 0 optimum speed and power A ). If Byte High Enable (BHE) is LOW, then data from I/O pins 18 (I/O through I/O ) is written into the location specified on the 8 15 Available in Pb-free 48-ball very fine-pitch ball grid array address pins (A through A ). 0 18 (VFBGA) package Read from the device by taking Chip Enables (CE LOW and 1 Functional Description CE HIGH) and Output Enable (OE) LOW while forcing the Write 2 Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data The CY62157EV18 is a high performance CMOS static RAM from the memory location specified by the address pins appear organized as 512K words by 16 bits. This device features on I/O to I/O . If Byte High Enable (BHE) is LOW, then data from 0 7 advanced circuit design to provide ultra low active current. This memory appears on I/O to I/O . See the Truth Table on page 8 15 is ideal for providing More Battery Life (MoBL ) in portable 13 for a complete description of read and write modes. applications such as cellular telephones. The device also has an Product Portfolio Power Dissipation Speed Operating I , (mA) V Range (V) Product CC CC (ns) Standby, I ( A) SB2 f = 1MHz f = f max 1 1 1 1 Min Max Max Max Max Typ Typ Typ Typ CY62157EV18 1.65 1.8 2.25 55 1.8 3 18 25 2 8 Note 1. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V = V , T = 25 C. CC CC(typ) A Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 38-05490 Rev. *I Revised August 22, 2013 CY62157EV18 MoBL Logic Block Diagram DATA IN DRIVERS A 10 A 9 A 8 A 7 A 6 512K x 16 A 5 RAM Array I/O I/O A 0 7 4 A 3 I/O I/O 8 15 A 2 A 1 A 0 COLUMN DECODER BHE WE CE 2 CE 1 OE BLE POWER DOWN BHE CE CIRCUIT 2 CE BLE 1 Document Number: 38-05490 Rev. *I Page 2 of 19 ROW DECODER A 11 A 12 A 13 A 14 A 15 A 16 A 17 A 18 SENSE AMPS