X-On Electronics has gained recognition as a prominent supplier of CY62167DV30LL-55BVXI SRAM across the USA, India, Europe, Australia, and various other global locations. CY62167DV30LL-55BVXI SRAM are a product manufactured by Infineon. We provide cost-effective solutions for SRAM, ensuring timely deliveries around the world.

CY62167DV30LL-55BVXI Infineon

CY62167DV30LL-55BVXI electronic component of Infineon
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Part No.CY62167DV30LL-55BVXI
Manufacturer: Infineon
Category: SRAM
Description: SRAM 16Mb 3V 55ns 1M x 16 LP SRAM
Datasheet: CY62167DV30LL-55BVXI Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 12.859 ea
Line Total: USD 12.86 
Availability - 499
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
499
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 12.859
10 : USD 11.935
25 : USD 11.539
100 : USD 10.285
250 : USD 10.153
500 : USD 9.614
1050 : USD 9.361
2100 : USD 9.229

   
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We are delighted to provide the CY62167DV30LL-55BVXI from our SRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CY62167DV30LL-55BVXI and other electronic components in the SRAM category and beyond.

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CY62167DV30 MoBL 16-Mbit (1 M 16) Static RAM 16-Mbit (1 M 16) Static RAM automatic power-down feature that significantly reduces power Features consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected (CE Thin small outline package (TSOP-I) configurable as 1 HIGH or CE LOW or both BHE and BLE are HIGH). The 1 M 16 or as 2 M 8 SRAM 2 input/output pins (I/O through I/O ) are placed in a 0 15 Wide voltage range: 2.2 V3.6 V high-impedance state when: deselected (CE HIGH or CE 1 2 LOW), outputs are disabled (OE HIGH), both Byte High Enable Ultra-low active power: and Byte Low Enable are disabled (BHE, BLE HIGH), or during Typical active current: 2 mA at f = 1 MHz a Write operation (CE LOW, CE HIGH and WE LOW). 1 2 Ultra-low standby power Writing to the device is accomplished by taking Chip Enables (CE LOW and CE HIGH) and Write Enable (WE) input LOW. If Easy memory expansion with CE , CE and OE features 1 2 1 2 Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O 0 Automatic power-down when deselected through I/O ), is written into the location specified on the address 7 pins (A through A ). If Byte High Enable (BHE) is LOW, then 0 19 Complementary metal oxide semiconductor (CMOS) for data from I/O pins (I/O through I/O ) is written into the location 8 15 optimum speed / power specified on the address pins (A through A ). 0 19 Available in Pb-free and non Pb-free 48-ball very fine-pitch ball Reading from the device is accomplished by taking Chip Enables grid array (VFBGA) and 48-pin TSOP I package (CE LOW and CE HIGH) and Output Enable (OE) LOW while 1 2 forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) Functional Description is LOW, then data from the memory location specified by the address pins appear on I/O to I/O . If Byte High Enable (BHE) 0 7 The CY62167DV30 is a high-performance CMOS static RAM is LOW, then data from memory appear on I/O to I/O . See the 8 15 organized as 1M words by 16-bits. This device features truth table at the back of this data sheet for a complete advanced circuit design to provide ultra-low active current. This description of Read and Write modes. is ideal for providing More Battery Life (MoBL ) in portable For a complete list of related documentation, click here. applications such as cellular telephones. The device also has an Logic Block Diagram DATA IN DRIVERS A 10 A 9 A 8 A 7 A 1M 16 / 2M x 8 6 A 5 RAM Array I/O I/O 0 7 A 4 A I/O I/O 3 8 15 A 2 A 1 A 0 COLUMN DECODER BYTE BHE WE CE 2 CE 1 OE BLE Power-Down CE Circuit BHE 2 CE BLE 1 Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 38-05328 Rev. *M Revised November 19, 2014 ROW DECODER A 11 A 12 A 13 A 14 A 15 A 16 A 17 A 18 A 19 SENSE AMPS CY62167DV30 MoBL Contents Product Portfolio ..............................................................3 Ordering Information ...................................................... 13 Pin Configurations ...........................................................3 Ordering Code Definitions ......................................... 13 Maximum Ratings .............................................................4 Package Diagrams .......................................................... 14 Operating Range ...............................................................4 Acronyms ........................................................................16 Electrical Characteristics .................................................4 Document Conventions ................................................. 16 Capacitance ......................................................................5 Units of Measure ....................................................... 16 Thermal Resistance ..........................................................5 Document History Page ................................................. 17 AC Test Loads and Waveforms .......................................5 Sales, Solutions, and Legal Information ...................... 18 Data Retention Characteristics .......................................6 Worldwide Sales and Design Support ....................... 18 Data Retention Waveform ................................................6 Products ....................................................................18 Switching Characteristics ................................................7 PSoC Solutions ...................................................... 18 Switching Waveforms ......................................................8 Cypress Developer Community ................................. 18 Truth Table ......................................................................12 Technical Support ..................................................... 18 Document Number: 38-05328 Rev. *M Page 2 of 18

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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