X-On Electronics has gained recognition as a prominent supplier of CY62167EV18LL-55BVI SRAM across the USA, India, Europe, Australia, and various other global locations. CY62167EV18LL-55BVI SRAM are a product manufactured by Infineon. We provide cost-effective solutions for SRAM, ensuring timely deliveries around the world.

CY62167EV18LL-55BVI Infineon

CY62167EV18LL-55BVI electronic component of Infineon
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Part No.CY62167EV18LL-55BVI
Manufacturer: Infineon
Category: SRAM
Description: SRAM 16Mb 1.8V 55ns 1M x 16 LP SRAM
Datasheet: CY62167EV18LL-55BVI Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
960: USD 19.3838 ea
Line Total: USD 18608.45 
Availability - 0
MOQ: 960  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 20 Nov to Tue. 26 Nov
MOQ : 960
Multiples : 1
960 : USD 19.3838

0
Ship by Wed. 20 Nov to Tue. 26 Nov
MOQ : 18
Multiples : 18
18 : USD 24.155

0
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ : 960
Multiples : 960
960 : USD 20.8098
2880 : USD 20.2525

   
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We are delighted to provide the CY62167EV18LL-55BVI from our SRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CY62167EV18LL-55BVI and other electronic components in the SRAM category and beyond.

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CY62167EV18 MoBL 16-Mbit (1 M 16) Static RAM 16-Mbit (1 M 16) Static RAM automatic power down feature that reduces power consumption Features by 99 percent when addresses are not toggling. Place the device into standby mode when deselected (CE HIGH or CE LOW or Very high speed: 55 ns 1 2 both BHE and BLE are HIGH). The input and output pins (I/O 0 Wide voltage range: 1.65 V to 2.25 V through I/O ) are placed in a high impedance state when: the 15 device is deselected (CE HIGH or CE LOW) outputs are 1 2 Ultra low standby power disabled (OE HIGH) both Byte High Enable and Byte Low Typical standby current: 1.5 A Enable are disabled (BHE, BLE HIGH) and a write operation is Maximum standby current: 12 A in progress (CE LOW, CE HIGH and WE LOW). 1 2 Ultra low active power To write to the device, take Chip Enables (CE LOW and CE 1 2 Typical active current: 2.2 mA at f = 1 MHz HIGH) and Write Enable (WE) input LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O through I/O ) is 0 7 Easy memory expansion with CE , CE , and OE features 1 2 written into the location specified on the address pins (A through 0 Automatic power down when deselected A ). If Byte High Enable (BHE) is LOW, then data from I/O pins 19 (I/O through I/O ) is written into the location specified on the 8 15 CMOS for optimum speed and power address pins (A through A ). 0 19 Offered in Pb-free 48-ball very fine ball grid array (VFBGA) To read from the device, take Chip Enables (CE LOW and CE 1 2 packages HIGH) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data Functional Description from the memory location specified by the address pins appears on I/O to I/O . If Byte High Enable (BHE) is LOW, then data from 0 7 The CY62167EV18 is a high performance CMOS static RAM memory appears on I/O to I/O . See the Truth Table on page 8 15 organized as 1M words by 16 bits. This device features 11 for a complete description of read and write modes. advanced circuit design to provide ultra low active current. This For a complete list of related documentation, click here. is ideal for providing More Battery Life (MoBL ) in portable applications such as cellular telephones. The device also has an Logic Block Diagram DATA IN DRIVERS A 10 A 9 A 8 A 7 A 1M 16 6 A RAM ARRAY 5 I/O I/O 0 7 A 4 A I/O I/O 8 15 3 A 2 A 1 A 0 COLUMN DECODER BHE CE 2 WE CE 2 CE 1 Power Down CE 1 OE Circuit BHE BLE BLE Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 38-05447 Rev. *O Revised January 16, 2015 ROW DECODER A 11 A 12 A 13 A 14 A 15 A 16 A 17 A 18 A 19 SENSE AMPS CY62167EV18 MoBL Contents Pin Configurations ...........................................................3 Ordering Information ...................................................... 12 Product Portfolio ..............................................................3 Ordering Code Definitions ......................................... 12 Maximum Ratings .............................................................4 Package Diagrams .......................................................... 13 Operating Range ...............................................................4 Acronyms ........................................................................14 Electrical Characteristics .................................................4 Document Conventions ................................................. 14 Capacitance ......................................................................5 Units of Measure ....................................................... 14 Thermal Resistance ..........................................................5 Document History Page ................................................. 15 AC Test Loads and Waveforms .......................................5 Sales, Solutions, and Legal Information ...................... 17 Data Retention Characteristics .......................................6 Worldwide Sales and Design Support ....................... 17 Data Retention Waveform ................................................6 Products ....................................................................17 Switching Characteristics ................................................7 PSoC Solutions ...................................................... 17 Switching Waveforms ......................................................8 Cypress Developer Community ................................. 17 Truth Table ......................................................................11 Technical Support ..................................................... 17 Document Number: 38-05447 Rev. *O Page 2 of 17

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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