X-On Electronics has gained recognition as a prominent supplier of CY62167EV30LL-45BVXA SRAM across the USA, India, Europe, Australia, and various other global locations. CY62167EV30LL-45BVXA SRAM are a product manufactured by Infineon. We provide cost-effective solutions for SRAM, ensuring timely deliveries around the world.

CY62167EV30LL-45BVXA Infineon

CY62167EV30LL-45BVXA electronic component of Infineon
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Part No.CY62167EV30LL-45BVXA
Manufacturer: Infineon
Category: SRAM
Description: SRAM 16Mb 3V 45ns 1M x 16 LP SRAM
Datasheet: CY62167EV30LL-45BVXA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
960: USD 12.1635 ea
Line Total: USD 11676.96 
Availability - 0
MOQ: 960  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 20 Nov to Tue. 26 Nov
MOQ : 960
Multiples : 1
960 : USD 12.1635

0
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ : 960
Multiples : 960
960 : USD 12.9964
2880 : USD 12.9073
5760 : USD 12.5505

   
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We are delighted to provide the CY62167EV30LL-45BVXA from our SRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CY62167EV30LL-45BVXA and other electronic components in the SRAM category and beyond.

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CY62167EV30 Automotive MoBL 16-Mbit (1M 16/2M 8) Static RAM 16-Mbit (1M 16/2M 8) Static RAM More Battery Life (MoBL ) in portable applications such as Features cellular telephones. The device also has an automatic power down feature that reduces power consumption by 99 percent TSOP I package configurable as 1M 16 or 2M 8 SRAM when addresses are not toggling. Place the device in standby Very high speed: 45 ns mode when deselected (CE HIGH or CE LOW or both BHE and 1 2 BLE are HIGH). The input and output pins (I/O through I/O ) Temperature ranges 0 15 are placed in a high-impedance state when: the device is Automotive-A: 40 C to +85 C deselected (CE HIGH or CE LOW), outputs are disabled (OE 1 2 Wide voltage range: 2.20 V to 3.60 V HIGH), both Byte High Enable and Byte Low Enable are disabled (BHE, BLE HIGH), or a write operation is in progress (CE LOW, 1 Ultra-low standby power CE HIGH and WE LOW). 2 Typical standby current: 1.5 A To write to the device, take Chip Enables (CE LOW and CE 1 2 Maximum standby current: 12 A HIGH) and Write Enable (WE) input LOW. If Byte Low Enable Ultra-low active power (BLE) is LOW, then data from I/O pins (I/O through I/O ) is 0 7 written into the location specified on the address pins (A through Typical active current: 2.2 mA at f = 1 MHz 0 A ). If Byte High Enable (BHE) is LOW, then data from the I/O 19 Easy memory expansion with CE , CE , and OE Features 1 2 pins (I/O through I/O ) is written into the location specified on 8 15 the address pins (A through A ). Automatic power-down when deselected 0 19 To read from the device, take Chip Enables (CE LOW and CE 1 2 CMOS for optimum speed and power HIGH) and Output Enable (OE) LOW while forcing the Write Offered in Pb-free 48-ball VFBGA and 48-pin TSOP I packages Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins appears Functional Description on I/O to I/O . If Byte High Enable (BHE) is LOW, then data from 0 7 memory appears on I/O to I/O . See Truth Table on page 12 8 15 The CY62167EV30 is a high-performance CMOS static RAM for a complete description of read and write modes. organized as 1M words by 16 bits or 2M words by 8 bits. This For a complete list of related documentation, click here. device features an advanced circuit design that provides an ultra low active current. Ultra low active current is ideal for providing Logic Block Diagram DATA IN DRIVERS A 10 A 9 A 8 A 7 A 1M 16 / 2M x 8 6 A 5 RAM Array I/O I/O 0 7 A 4 A I/O I/O 3 8 15 A 2 A 1 A 0 COLUMN DECODER BYTE BHE CE 2 WE CE 2 CE 1 Power Down CE 1 OE Circuit BHE BLE BLE Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 38-05446 Rev. *Q Revised August 2, 2018 ROW DECODER A 11 A 12 A 13 A 14 A 15 A 16 A 17 A 18 A 19 SENSE AMPS CY62167EV30 Automotive MoBL Contents Pin Configuration .............................................................3 Ordering Information ...................................................... 13 Product Portfolio ..............................................................3 Ordering Code Definitions ......................................... 13 Maximum Ratings .............................................................4 Package Diagrams .......................................................... 14 Operating Range ...............................................................4 Acronyms ........................................................................ 16 Electrical Characteristics .................................................4 Document Conventions ................................................. 16 Capacitance ......................................................................5 Units of Measure ....................................................... 16 Thermal Resistance ..........................................................5 Document History Page ................................................. 17 AC Test Loads and Waveforms .......................................5 Sales, Solutions, and Legal Information ...................... 19 Data Retention Characteristics .......................................6 Worldwide Sales and Design Support ....................... 19 Data Retention Waveform ................................................6 Products .................................................................... 19 Switching Characteristics ................................................7 PSoC Solutions ...................................................... 19 Switching Waveforms ......................................................8 Cypress Developer Community ................................. 19 Truth Table ......................................................................12 Technical Support ..................................................... 19 Document Number: 38-05446 Rev. *Q Page 2 of 19

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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