X-On Electronics has gained recognition as a prominent supplier of CY62167GN30-45ZXI SRAM across the USA, India, Europe, Australia, and various other global locations. CY62167GN30-45ZXI SRAM are a product manufactured by Infineon. We provide cost-effective solutions for SRAM, ensuring timely deliveries around the world.

CY62167GN30-45ZXI Infineon

CY62167GN30-45ZXI electronic component of Infineon
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Part No.CY62167GN30-45ZXI
Manufacturer: Infineon
Category: SRAM
Description: SRAM Micropower SRAMs
Datasheet: CY62167GN30-45ZXI Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
192: USD 14.85 ea
Line Total: USD 2851.2 
Availability - 0
MOQ: 192  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 192
Multiples : 1
192 : USD 14.85

0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 22.6075
10 : USD 20.6295
25 : USD 20.3188
100 : USD 17.8333

   
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We are delighted to provide the CY62167GN30-45ZXI from our SRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CY62167GN30-45ZXI and other electronic components in the SRAM category and beyond.

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CY62167GN30 MoBL 16-Mbit (1M 16/2M 8) Static RAM 16-Mbit (1M 16/2M 8) Static RAM More Battery Life (MoBL ) in portable applications such as Features cellular telephones. The device also has an automatic power down feature that reduces power consumption by 99 percent Ultra-low standby power when addresses are not toggling. Place the device into standby Typical standby current: 1.5 A mode when deselected (CE HIGH or CE LOW or both BHE and 1 2 Maximum standby current: 8 A BLE are HIGH). The input and output pins (I/O through I/O ) 0 15 TSOP I package configurable as 1M 16 or 2M 8 SRAM are placed in a high impedance state when: the device is deselected (CE HIGH or CE LOW), outputs are disabled (OE 1 2 Very high speed: 45 ns HIGH), both Byte High Enable and Byte Low Enable are disabled Temperature ranges (BHE, BLE HIGH), or a write operation is in progress (CE LOW, 1 CE HIGH and WE LOW). Industrial: 40 C to +85 C 2 To write to the device, take Chip Enables (CE LOW and CE 1 2 Wide voltage range: 2.2 V to 3.6 V HIGH) and Write Enable (WE) input LOW. If Byte Low Enable Easy memory expansion with CE , CE , and OE Features (BLE) is LOW, then data from I/O pins (I/O through I/O ) is 1 2 0 7 written into the location specified on the address pins (A through 0 Automatic power-down when deselected A ). If Byte High Enable (BHE) is LOW, then data from the I/O 19 pins (I/O through I/O ) is written into the location specified on CMOS for optimum speed and power 8 15 the address pins (A through A ). 0 19 Offered in Pb-free 48-ball VFBGA and 48-pin TSOP I packages To read from the device, take Chip Enables (CE LOW and CE 1 2 HIGH) and Output Enable (OE) LOW while forcing the Write Functional Description Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins appears The CY62167GN30 is a high performance CMOS static RAM on I/O to I/O . If Byte High Enable (BHE) is LOW, then data from organized as 1M words by 16 bits or 2M words by 8 bits. This 0 7 memory appears on I/O to I/O . See Truth Table on page 12 device features an advanced circuit design that provides an ultra 8 15 for a complete description of read and write modes. low active current. Ultra low active current is ideal for providing Logic Block Diagram DATA IN DRIVERS A 10 A 9 A 8 A 7 A 1M 16/2M 8 6 A 5 RAM Array I/O I/O 0 7 A 4 A I/O I/O 3 8 15 A 2 A 1 A 0 COLUMN DECODER BYTE BHE CE 2 WE CE 2 CE 1 Power Down CE 1 OE Circuit BHE BLE BLE Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 002-28515 Rev. *A Revised March 16, 2020 ROW DECODER A 11 A 12 A 13 A 14 A 15 A 16 A 17 A 18 A 19 SENSE AMPSCY62167GN30 MoBL Contents Pin Configuration .............................................................3 Ordering Information ...................................................... 13 Product Portfolio ..............................................................3 Ordering Code Definitions ......................................... 13 Maximum Ratings .............................................................4 Package Diagrams .......................................................... 14 Operating Range ...............................................................4 Acronyms ........................................................................ 16 Electrical Characteristics .................................................4 Document Conventions ................................................. 16 Capacitance ......................................................................5 Units of Measure ....................................................... 16 Thermal Resistance ..........................................................5 Document History Page ................................................. 17 AC Test Loads and Waveforms .......................................5 Sales, Solutions, and Legal Information ...................... 18 Data Retention Characteristics .......................................6 Worldwide Sales and Design Support ....................... 18 Data Retention Waveform ................................................6 Products .................................................................... 18 Switching Characteristics ................................................7 PSoC Solutions ...................................................... 18 Switching Waveforms ......................................................8 Cypress Developer Community ................................. 18 Truth Table ......................................................................12 Technical Support ..................................................... 18 Document Number: 002-28515 Rev. *A Page 2 of 18

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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