X-On Electronics has gained recognition as a prominent supplier of CY7C1010DV33-10ZSXI SRAM across the USA, India, Europe, Australia, and various other global locations. CY7C1010DV33-10ZSXI SRAM are a product manufactured by Infineon. We provide cost-effective solutions for SRAM, ensuring timely deliveries around the world.

CY7C1010DV33-10ZSXI Infineon

Hot CY7C1010DV33-10ZSXI electronic component of Infineon
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Part No.CY7C1010DV33-10ZSXI
Manufacturer: Infineon
Category: SRAM
Description: Cypress Semiconductor SRAM 2Mb 10ns 3.3V 256Kx8 Fast Async SRAM
Datasheet: CY7C1010DV33-10ZSXI Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
11: USD 3.77 ea
Line Total: USD 41.47 
Availability - 194
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ: 11  Multiples: 1
Pack Size: 1
Availability Price Quantity
591
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 6.4389
10 : USD 5.7369
100 : USD 5.2884
270 : USD 5.0349
540 : USD 4.9712
1080 : USD 4.8906
2700 : USD 4.8113

92
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 4.8685
10 : USD 4.5305
100 : USD 4.2978
270 : USD 4.16
540 : USD 4.1249
1080 : USD 4.0807
2700 : USD 4.0352

64
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 4.884
10 : USD 4.433
100 : USD 4.191
270 : USD 4.026
540 : USD 4.004
1080 : USD 3.949
2700 : USD 3.949
5130 : USD 3.784
10260 : USD 3.729

169
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 94
Multiples : 1
94 : USD 5.2325
100 : USD 5.0212
500 : USD 4.81
1000 : USD 4.55

295
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 94
Multiples : 1
94 : USD 5.2325
100 : USD 5.0212
500 : USD 4.81
1000 : USD 4.55

591
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3
Multiples : 1
3 : USD 6.4389
10 : USD 5.7369
100 : USD 5.2884
270 : USD 5.0349
540 : USD 4.9712
1080 : USD 4.8906
2700 : USD 4.8113

194
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 11
Multiples : 1
11 : USD 3.77
50 : USD 3.7375
200 : USD 3.7212

678
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 94
Multiples : 1
94 : USD 5.2325
100 : USD 5.0212
500 : USD 4.81
1000 : USD 4.55

92
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3
Multiples : 1
3 : USD 4.8685
10 : USD 4.5305
100 : USD 4.2978
270 : USD 4.16
540 : USD 4.1249
1080 : USD 4.0807
2700 : USD 4.0352

   
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We are delighted to provide the CY7C1010DV33-10ZSXI from our SRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CY7C1010DV33-10ZSXI and other electronic components in the SRAM category and beyond.

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CY7C1010DV33 2-Mbit (256 K 8) Static RAM 2-Mbit (256 K 8) Static RAM Features Functional Description Pin and function compatible with CY7C1010CV33 The CY7C1010DV33 is a high performance CMOS Static RAM organized as 256 K words by 8 bits. Easy memory expansion is High speed provided by an active LOW Chip Enable (CE), an active LOW t = 10 ns AA Output Enable (OE), and three-state drivers. Writing to the device is accomplished by taking Chip Enable (CE) and Write Low active power Enable (WE) inputs LOW. Data on the eight I/O pins (I/O 0 I = 90 mA at 10 ns CC through I/O ) is then written into the location specified on the 7 Low CMOS standby power address pins (A through A ). 0 17 I = 10 mA SB2 Reading from the device is accomplished by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing Write Enable 2.0 V data retention (WE) HIGH. Under these conditions, the contents of the memory Automatic power down when deselected location specified by the address pins will appear on the I/O pins. The eight input and output pins (I/O through I/O ) are placed in TTL-compatible inputs and outputs 0 7 a high impedance state when the device is deselected (CE Easy memory expansion with CE and OE features HIGH), the outputs are disabled (OE HIGH), or during a Write operation (CE LOW, and WE LOW). Available in Pb-free 36-pin SOJ and 44-pin TSOP II packages The CY7C1010DV33 is available in 36-pin SOJ and 44-pin TSOP II packages with center power and ground (revolutionary) pinout. For a complete list of related documentation, click here. Logic Block Diagram IO INPUT BUFFER 0 A 0 IO A 1 1 A 2 IO A 2 3 A 4 256K x 8 IO A 3 5 A 6 ARRAY IO A 4 7 A 8 IO A 5 9 A 10 IO 6 CE POWER IO 7 COLUMN DECODER WE DOWN OE Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 001-00062 Rev. *F Revised November 19, 2014 ROW DECODER A 11 A 12 A 13 A 14 A 15 A 16 A 17 SENSE AMPSCY7C1010DV33 Contents Selection Guide ................................................................3 Ordering Information ...................................................... 11 Pin Configuration .............................................................3 Ordering Code Definitions ......................................... 11 Maximum Ratings .............................................................4 Package Diagrams .......................................................... 12 Operating Range ...............................................................4 Acronyms ........................................................................14 Electrical Characteristics .................................................4 Document Conventions ................................................. 14 Capacitance ......................................................................5 Units of Measure ....................................................... 14 Thermal Resistance ..........................................................5 Document History Page ................................................. 15 AC Test Loads and Waveforms .......................................5 Sales, Solutions, and Legal Information ...................... 16 Data Retention Characteristics .......................................6 Worldwide Sales and Design Support ....................... 16 Data Retention Waveform ................................................6 Products ....................................................................16 AC Switching Characteristics .........................................7 PSoC Solutions ...................................................... 16 Switching Waveforms ......................................................8 Cypress Developer Community ................................. 16 Truth Table ......................................................................10 Technical Support ..................................................... 16 Document Number: 001-00062 Rev. *F Page 2 of 16

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
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INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
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Infineon / Cypress
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INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
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SP9
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