X-On Electronics has gained recognition as a prominent supplier of CY7C1049GN30-10ZSXI SRAM across the USA, India, Europe, Australia, and various other global locations. CY7C1049GN30-10ZSXI SRAM are a product manufactured by Infineon. We provide cost-effective solutions for SRAM, ensuring timely deliveries around the world.

CY7C1049GN30-10ZSXI Infineon

CY7C1049GN30-10ZSXI electronic component of Infineon
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Part No.CY7C1049GN30-10ZSXI
Manufacturer: Infineon
Category: SRAM
Description: IC: SRAM memory; 512kx8bit; 2.2÷3.6V; 10ns; TSOP44 II; parallel
Datasheet: CY7C1049GN30-10ZSXI Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3: USD 5.531 ea
Line Total: USD 16.59 
Availability - 783
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ: 3  Multiples: 1
Pack Size: 1
Availability Price Quantity
783
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 3
Multiples : 1
3 : USD 5.531
10 : USD 5.288
25 : USD 5.1119
100 : USD 4.9017
250 : USD 4.7966
500 : USD 4.5864

198
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 12
Multiples : 1
12 : USD 8.3572
135 : USD 7.8333

729
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 61
Multiples : 1
61 : USD 8.4289
100 : USD 8.0876
500 : USD 7.7464
1000 : USD 7.3027

353
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 61
Multiples : 1
61 : USD 8.4289
100 : USD 8.0876
500 : USD 7.7464
1000 : USD 7.3027

185
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 3
Multiples : 1
3 : USD 9.8799
10 : USD 8.852
25 : USD 8.1818
100 : USD 7.4583
250 : USD 7.1253
500 : USD 6.4974

   
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We are delighted to provide the CY7C1049GN30-10ZSXI from our SRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CY7C1049GN30-10ZSXI and other electronic components in the SRAM category and beyond.

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CY7C1049GN 4-Mbit (512K words 8-bit) Static RAM 4-Mbit (512K words 8-bit) Static RAM Features Functional Description High speed CY7C1049GN is a high-performance CMOS fast static RAM device organized as 512K words by 8-bits. t = 10 ns AA Data writes are performed by asserting the Chip Enable (CE) and Low active and standby currents Write Enable (WE) inputs LOW, while providing the data on I/O 0 Active current: I = 38 mA typical CC through I/O and address on A through A pins. 7 0 18 Standby current: I = 6 mA typical SB2 Data reads are performed by asserting the Chip Enable (CE) and Operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and Output Enable (OE) inputs LOW and providing the required 4.5 V to 5.5 V address on the address lines. Read data is accessible on the I/O lines (I/O through I/O ). 0 7 1.0 V data retention All I/Os (I/O through I/O ) are placed in a high-impedance state 0 7 TTL-compatible inputs and outputs during the following events: Pb-free 36-pin SOJ and 44-pin TSOP II packages The device is deselected (CE HIGH) The control signal OE is de-asserted The logic block diagram is on page 2. Product Portfolio Power Dissipation Speed Operating I , (mA) (ns) CC Product Range V Range (V) Standby, I (mA) CC SB2 f = f max 10/15 1 1 Typ Max Typ Max CY7C1049GN18 Industrial 1.65 V2.2 V 15 40 6 8 CY7C1049GN30 2.2 V3.6 V 10 38 45 CY7C1049GN 4.5 V5.5 V 10 38 45 Note 1. Typical values are included only for reference and are not guaranteed or tested. Typical values are measured at V = 1.8 V (for a V range of 1.65 V2.2 V), CC CC V = 3 V (for a V range of 2.2 V3.6 V), and V = 5 V (for a V range of 4.5 V5.5 V), T = 25 C. CC CC CC CC A Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 002-10613 Rev. *C Revised November 14, 2017CY7C1049GN Logic Block Diagram CY7C1049GN INPUTBUFFER A0 A1 A2 A3 512Kx8 I/O I/O 0 7 A4 RAMARRAY A5 A6 A7 A8 A9 COLUMN DECODER WE CE OE Document Number: 002-10613 Rev. *C Page 2 of 17 ROWDECODER A10 A11 A12 A13 A14 A15 A16 A17 A18 SENSE AMPLIFIERS

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
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