X-On Electronics has gained recognition as a prominent supplier of CY7C1143KV18-450BZC SRAM across the USA, India, Europe, Australia, and various other global locations. CY7C1143KV18-450BZC SRAM are a product manufactured by Infineon. We provide cost-effective solutions for SRAM, ensuring timely deliveries around the world.

CY7C1143KV18-450BZC Infineon

CY7C1143KV18-450BZC electronic component of Infineon
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Part No.CY7C1143KV18-450BZC
Manufacturer: Infineon
Category: SRAM
Description: SRAM 18MB (1Mx18) 1.8v 450MHz DDR II SRAM
Datasheet: CY7C1143KV18-450BZC Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 136
Multiples : 1
136 : USD 44.4713
250 : USD 42.3792
500 : USD 42.066
1000 : USD 41.7528
2000 : USD 41.4396
2500 : USD 41.1264
3000 : USD 40.8024
4000 : USD 40.4892
5000 : USD 40.1652
10000 : USD 39.8412
N/A

Obsolete
0
MOQ : 9
Multiples : 9
9 : USD 47.9903
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 52.5205
10 : USD 49.243
25 : USD 47.4835
50 : USD 46.3105
100 : USD 42.6535
272 : USD 42.6535
544 : USD 42.182
1088 : USD 41.009
N/A

Obsolete
   
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We are delighted to provide the CY7C1143KV18-450BZC from our SRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CY7C1143KV18-450BZC and other electronic components in the SRAM category and beyond.

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CY7C1143KV18/CY7C1145KV18 18-Mbit QDR II+ SRAM Four-Word Burst Architecture (2.0 Cycle Read Latency) 18-Mbit QDR II+ SRAM Four-Word Burst Architecture (2.0 Cycle Read Latency) Features Configurations Separate independent read and write data ports With Read Cycle Latency of 2.0 cycles: Supports concurrent transactions CY7C1143KV18 1M 18 450-MHz clock for high bandwidth CY7C1145KV18 512K 36 Four-word burst for reducing address bus frequency Functional Description Double data rate (DDR) Interfaces on both read and write ports (data transferred at 900 MHz) at 450 MHz The CY7C1143KV18, and CY7C1145KV18 are 1.8 V Synchronous Pipelined SRAMs, equipped with QDR II+ Available in 2.0 clock cycle latency architecture. Similar to QDR II architecture, QDR II+ architecture Two input clocks (K and K) for precise DDR timing consists of two separate ports: the read port and the write port to SRAM uses rising edges only access the memory array. The read port has dedicated data outputs to support read operations and the write port has Echo clocks (CQ and CQ) simplify data capture in high-speed dedicated data inputs to support write operations. QDR II+ systems architecture has separate data inputs and data outputs to Data valid pin (QVLD) to indicate valid data on the output completely eliminate the need to turnaround the data bus that exists with common I/O devices. Each port is accessed through Single multiplexed address input bus latches address inputs for read and write ports a common address bus. Addresses for read and write addresses are latched on alternate rising edges of the input (K) clock. Separate port selects for depth expansion Accesses to the QDR II+ read and write ports are completely Synchronous internally self-timed writes independent of one another. To maximize data throughput, both read and write ports are equipped with DDR interfaces. Each QDR II+ operates with 2.0 cycle read latency when DOFF is address location is associated with four 18-bit words asserted HIGH (CY7C1143KV18), or 36-bit words (CY7C1145KV18) that burst Operates similar to QDR I device with one cycle read latency sequentially into or out of the device. Because data is transferred when DOFF is asserted LOW into and out of the device on every rising edge of both input clocks (K and K), memory bandwidth is maximized while Available in 18, and 36 configurations simplifying system design by eliminating bus turnarounds. Full data coherency, providing most current data Depth expansion is accomplished with port selects, which 1 Core V = 1.8 V 0.1 V I/O V = 1.4 V to V DD DDQ DD enables each port to operate independently. Supports both 1.5 V and 1.8 V I/O supply All synchronous inputs pass through input registers controlled by HSTL inputs and variable drive HSTL output buffers the K or K input clocks. All data outputs pass through output registers controlled by the K or K input clocks. Writes are Available in 165-ball FBGA package (13 15 1.4 mm) conducted with on-chip synchronous self-timed write circuitry. Offered in both Pb-free and non Pb-free packages For a complete list of related documentation, click here. JTAG 1149.1 compatible test access port Phase-locked loop (PLL) for accurate data placement Selection Guide Description 450 MHz 400 MHz Unit Maximum operating frequency 450 400 MHz Maximum operating current 18 670 610 mA 36 930 850 Note 1. The Cypress QDR II+ devices surpass the QDR consortium specification and can support V = 1.4 V to V . DDQ DD Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 001-58910 Rev. *H Revised February 2, 2016256K x 18 Array 128K x 36 Array 256K x 18 Array 128K x 36 Array 256K x 18 Array 128K x 36 Array 256K x 18 Array 128K x 36 Array CY7C1143KV18/CY7C1145KV18 Logic Block Diagram CY7C1143KV18 18 D 17:0 Write Write Write Write 18 Address A Reg Reg Reg Reg (17:0) Register 18 Address A (17:0) Register RPS K Control CLK K Logic Gen. DOFF Read Data Reg. CQ 72 V 36 REF CQ 18 Reg. Reg. Control WPS 18 Logic 18 18 36 BWS Q 1:0 Reg. 17:0 18 QVLD Logic Block Diagram CY7C1145KV18 36 D 35:0 Write Write Write Write 17 Address A Reg Reg Reg Reg (16:0) Register 17 Address A (16:0) Register RPS K Control CLK K Logic Gen. DOFF Read Data Reg. CQ 144 V 72 REF CQ 36 Reg. Reg. Control WPS 36 Logic 36 72 36 BWS Q 3:0 Reg. 35:0 36 QVLD Document Number: 001-58910 Rev. *H Page 2 of 30 Write Add. Decode Write Add. Decode Read Add. Decode Read Add. Decode

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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