X-On Electronics has gained recognition as a prominent supplier of CY7C1263V18-400BZC SRAM across the USA, India, Europe, Australia, and various other global locations. CY7C1263V18-400BZC SRAM are a product manufactured by Infineon. We provide cost-effective solutions for SRAM, ensuring timely deliveries around the world.

CY7C1263V18-400BZC Infineon

CY7C1263V18-400BZC electronic component of Infineon
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Part No.CY7C1263V18-400BZC
Manufacturer: Infineon
Category: SRAM
Description: SRAM Chip Sync Dual 1.8V 36M-bit 2M x 18 0.45ns 165-Pin FBGA
Datasheet: CY7C1263V18-400BZC Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
6: USD 7.7385 ea
Line Total: USD 46.43 
Availability - 0
MOQ: 6  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 07 Oct to Fri. 11 Oct
MOQ : 4
Multiples : 1
4 : USD 9.9421

0
Ship by Mon. 07 Oct to Fri. 11 Oct
MOQ : 6
Multiples : 1
6 : USD 7.7385

   
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We are delighted to provide the CY7C1263V18-400BZC from our SRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CY7C1263V18-400BZC and other electronic components in the SRAM category and beyond.

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CY7C1261V18, CY7C1276V18 CY7C1263V18, CY7C1265V18 36-Mbit QDR-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) Features Configurations With Read Cycle Latency of 2.5 cycles: Separate independent read and write data ports CY7C1261V18 4M x 8 Supports concurrent transactions CY7C1276V18 4M x 9 300 MHz to 400 MHz clock for high bandwidth CY7C1263V18 2M x 18 4-Word Burst for reducing address bus frequency CY7C1265V18 1M x 36 Double Data Rate (DDR) interfaces on both read and write ports Functional Description (data transferred at 800 MHz) at 400 MHz The CY7C1261V18, CY7C1276V18, CY7C1263V18, and Read latency of 2.5 clock cycles CY7C1265V18 are 1.8V Synchronous Pipelined SRAMs, Two input clocks (K and K) for precise DDR timing equipped with Quad Data Rate-II+ (QDR-II+) architecture. SRAM uses rising edges only QDR-II+ architecture consists of two separate ports to access the memory array. The read port has dedicated data outputs to Echo clocks (CQ and CQ) simplify data capture in high speed support read operations and the write port has dedicated data systems inputs to support write operations. QDR-II+ architecture has separate data inputs and data outputs to completely eliminate Single multiplexed address input bus latches address inputs the need to turn around the data bus required with common IO for both read and write ports devices. Each port is accessed through a common address bus. Separate Port Selects for depth expansion Addresses for read and write addresses are latched on alternate rising edges of the input (K) clock. Accesses to the QDR-II+ read Data valid pin (QVLD) to indicate valid data on the output and write ports are completely independent of one another. To Synchronous internally self-timed writes maximize data throughput, both read and write ports are equipped with Double Data Rate (DDR) interfaces. Each Available in x8, x9, x18, and x36 configurations address location is associated with four 8-bit words (CY7C1261V18), 9-bit words (CY7C1276V18), 18-bit words Full data coherency providing most current data (CY7C1263V18), or 36-bit words (CY7C1265V18) that burst [1] Core V = 1.8V 0.1V; IO V = 1.4V to V DD DDQ DD sequentially into or out of the device. Because data can be trans- ferred into and out of the device on every rising edge of both input HSTL inputs and variable drive HSTL output buffers clocks (K and K), memory bandwidth is maximized while simpli- Available in 165-ball FBGA package (15 x 17 x 1.4 mm) fying system design by eliminating bus turn-arounds. Depth expansion is accomplished with Port Selects for each port. Offered in both Pb-free and non Pb-free packages Port selects enable each port to operate independently. JTAG 1149.1 compatible test access port All synchronous inputs pass through input registers controlled by Delay Lock Loop (DLL) for accurate data placement the K or K input clocks. All data outputs pass through output registers controlled by the K or K input clocks. Writes are conducted with on-chip synchronous self-timed write circuitry. Selection Guide Description 400 MHz 375 MHz 333 MHz 300 MHz Unit Maximum Operating Frequency 400 375 333 300 MHz Maximum Operating Current 1330 1240 1120 1040 mA Note 1. The QDR consortium specification for V is 1.5V + 0.1V. The Cypress QDR devices exceed the QDR consortium specification and are capable of supporting DDQ V = 1.4V to V . DDQ DD Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 001-06366 Rev. *E Revised September 01, 2008 [+] Feedback 1M x 8 Array 1M x 9 Array 1M x 8 Array 1M x 9 Array 1M x 8 Array 1M x 9 Array 1M x 8 Array 1M x 9 Array CY7C1261V18, CY7C1276V18 CY7C1263V18, CY7C1265V18 Logic Block Diagram (CY7C1261V18) D [7:0] 8 Write Write Write Write Address A Reg Reg Reg Reg (19:0) Address Register 20 Register A (19:0) 20 K RPS Control CLK K Logic Gen. DOFF Read Data Reg. CQ CQ 32 16 V REF Reg. Reg. WPS Control Q [7:0] Logic 16 NWS [1:0] Reg. 8 8 QVLD Logic Block Diagram (CY7C1276V18) D [8:0] 9 Write Write Write Write Address A Reg Reg Reg Reg (19:0) 20 Address Register Register A (19:0) 20 RPS K Control CLK K Logic Gen. DOFF Read Data Reg. CQ CQ 36 18 V REF Reg. Reg. WPS Control Q [8:0] 18 BWS Logic [0] Reg. 9 9 QVLD Document Number: 001-06366 Rev. *E Page 2 of 29 [+] Feedback Write Add. Decode Write Add. Decode Read Add. Decode Read Add. Decode

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION

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