X-On Electronics has gained recognition as a prominent supplier of CY7C1315KV18-333BZXC SRAM across the USA, India, Europe, Australia, and various other global locations. CY7C1315KV18-333BZXC SRAM are a product manufactured by Infineon. We provide cost-effective solutions for SRAM, ensuring timely deliveries around the world.

CY7C1315KV18-333BZXC Infineon

CY7C1315KV18-333BZXC electronic component of Infineon
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Part No.CY7C1315KV18-333BZXC
Manufacturer: Infineon
Category: SRAM
Description: SRAM Sync SRAMs
Datasheet: CY7C1315KV18-333BZXC Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 272
Multiples : 1
272 : USD 31.5338
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 41.6754
10 : USD 39.0784
25 : USD 37.6852
50 : USD 36.7488
100 : USD 33.8508
272 : USD 33.8508
544 : USD 33.7952
1088 : USD 33.2824
N/A

Obsolete
   
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We are delighted to provide the CY7C1315KV18-333BZXC from our SRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CY7C1315KV18-333BZXC and other electronic components in the SRAM category and beyond.

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CY7C1311KV18/CY7C1911KV18 CY7C1313KV18/CY7C1315KV18 18-Mbit QDR II SRAM Four-Word Burst Architecture 18-Mbit QDR II SRAM Four-Word Burst Architecture Features Configurations Separate independent read and write data ports CY7C1311KV18 2M 8 Supports concurrent transactions CY7C1911KV18 2M 9 333-MHz clock for high bandwidth CY7C1313KV18 1M 18 CY7C1315KV18 512K 36 Four-word burst for reducing address bus frequency Double data rate (DDR) interfaces on both read and write ports Functional Description (data transferred at 666 MHz) at 333 MHz The CY7C1311KV18, CY7C1911KV18, CY7C1313KV18, and Two input clocks (K and K) for precise DDR timing CY7C1315KV18 are 1.8 V Synchronous Pipelined SRAMs, SRAM uses rising edges only equipped with QDR II architecture. QDR II architecture consists of two separate ports: the read port and the write port to access Two Input Clocks for Output Data (C and C) to minimize Clock the memory array. The read port has dedicated data outputs to skew and flight time mismatches support read operations and the write port has dedicated data Echo clocks (CQ and CQ) simplify data capture in high speed inputs to support write operations. QDR II architecture has systems separate data inputs and data outputs to completely eliminate the need to turnaround the data bus that exists with common Single multiplexed address input bus latches address inputs I/O devices. Each port can be accessed through a common for read and write ports address bus. Addresses for read and write addresses are Separate port selects for depth expansion latched on alternate rising edges of the input (K) clock. Accesses to the QDR II read and write ports are independent of one Synchronous internally self-timed writes another. To maximize data throughput, both read and write ports are equipped with DDR interfaces. Each address location is QDR II operates with 1.5 cycle read latency when DOFF is associated with four 8-bit words (CY7C1311KV18), 9-bit words asserted HIGH (CY7C1911KV18), 18-bit words (CY7C1313KV18), or 36-bit Operates similar to QDR I device with 1 cycle read latency when words (CY7C1315KV18) that burst sequentially into or out of the DOFF is asserted LOW device. Because data can be transferred into and out of the device on every rising edge of both input clocks (K and K and C Available in 8, 9, 18, and 36 configurations and C), memory bandwidth is maximized while simplifying Full data coherency, providing most current data system design by eliminating bus turnarounds. Depth expansion is accomplished with port selects, which Core V = 1.8 V (0.1 V) I/O V = 1.4 V to V DD DDQ DD enables each port to operate independently. Supports both 1.5 V and 1.8 V I/O supply All synchronous inputs pass through input registers controlled by Available in 165-ball FBGA package (13 15 1.4 mm) the K or K input clocks. All data outputs pass through output Offered in both Pb-free and non Pb-free packages registers controlled by the C or C (or K or K in a single clock domain) input clocks. Writes are conducted with on-chip Variable drive HSTL output buffers synchronous self-timed write circuitry. JTAG 1149.1 compatible test access port For a complete list of related documentation, click here. PLL for accurate data placement Selection Guide Description 333 MHz 300 MHz 250 MHz Unit Maximum operating frequency 333 300 250 MHz Maximum operating current 8 Not Offered Not Offered 430 mA 9 520 490 430 18 530 500 440 36 730 670 590 Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 001-58904 Rev. *K Revised December 1, 2017512 K x 9 Array 512 K x 8 Array 512 K x 9 Array 512 K x 8 Array 512 K x 9 Array 512 K x 8 Array 512 K x 9 Array 512 K x 8 Array CY7C1311KV18/CY7C1911KV18 CY7C1313KV18/CY7C1315KV18 Logic Block Diagram CY7C1311KV18 8 D 7:0 Write Write Write Write 19 Address A Reg Reg Reg Reg (18:0) Register 19 Address A (18:0) Register RPS K Control CLK K Logic Gen. C DOFF Read Data Reg. C CQ 32 V 16 REF 8 CQ Reg. Reg. Control WPS 8 Logic 8 8 16 NWS Q Reg. 1:0 7:0 8 Logic Block Diagram CY7C1911KV18 9 D 8:0 Write Write Write Write 19 Address A Reg Reg Reg Reg (18:0) Register 19 Address A (18:0) Register RPS K Control CLK K Logic Gen. C DOFF Read Data Reg. C CQ 36 V 18 REF 9 CQ Reg. Reg. Control WPS 9 Logic 9 9 18 BWS Q Reg. 0 8:0 9 Document Number: 001-58904 Rev. *K Page 2 of 33 Write Add. Decode Write Add. Decode Read Add. Decode Read Add. Decode

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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