CY7C1318KV18/CY7C1320KV18 18-Mbit DDR II SRAM Two-Word Burst Architecture 18-Mbit DDR II SRAM Two-Word Burst Architecture Features Configurations 18-Mbit density (1M 18, 512K 36) CY7C1318KV18 1M 18 CY7C1320KV18 512K 36 333-MHz clock for high bandwidth Two-word burst for reducing address bus frequency Functional Description Double data rate (DDR) interfaces (data transferred at The CY7C1318KV18, and CY7C1320KV18 are 1.8 V 666 MHz) at 333 MHz synchronous pipelined SRAM equipped with DDR II architecture. The DDR II consists of an SRAM core with advanced Two input clocks (K and K) for precise DDR timing synchronous peripheral circuitry and a 1-bit burst counter. SRAM uses rising edges only Addresses for read and write are latched on alternate rising Two input clocks for output data (C and C) to minimize clock edges of the input (K) clock. Write data is registered on the rising skew and flight time mismatches edges of both K and K. Read data is driven on the rising edges of C and C if provided, or on the rising edge of K and K if C/C are Echo clocks (CQ and CQ) simplify data capture in high-speed not provided. On CY7C1318KV18 and CY7C1320KV18, the systems burst counter takes in the least significant bit of the external Synchronous internally self-timed writes address and bursts two 18-bit words in the case of CY7C1318KV18 and two 36-bit words in the case of DDR II operates with 1.5 cycle read latency when DOFF is CY7C1320KV18 sequentially into or out of the device. asserted HIGH Asynchronous inputs include an output impedance matching Operates similar to DDR-I device with 1 cycle read latency input (ZQ). Synchronous data outputs (Q, sharing the same when DOFF is asserted LOW physical pins as the data inputs D) are tightly matched to the two output echo clocks CQ/CQ, eliminating the need for separately 1.8 V core power supply with HSTL inputs and outputs capturing data from each individual DDR SRAM in the system Variable drive HSTL output buffers design. Output data clocks (C/C) enable maximum system clocking and data synchronization flexibility. Expanded HSTL output voltage (1.4 VV ) DD All synchronous inputs pass through input registers controlled by Supports both 1.5 V and 1.8 V I/O supply the K or K input clocks. All data outputs pass through output Available in 165-ball FBGA package (13 15 1.4 mm) registers controlled by the C or C (or K or K in a single clock domain) input clocks. Writes are conducted with on-chip Offered in both Pb-free and non Pb-free packages synchronous self-timed write circuitry. JTAG 1149.1 compatible test access port For a complete list of related documentation, click here. Phase locked loop (PLL) for accurate data placement Selection Guide Description 333 MHz 300 MHz 250 MHz Unit Maximum operating frequency 333 300 250 MHz Maximum operating current 18 450 430 380 mA 36 560 520 460 Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 001-58905 Rev. *L Revised December 21, 2017512K x 18 Array 256K x 36 Array 256K x 36 Array 512K x 18 Array CY7C1318KV18/CY7C1320KV18 Logic Block Diagram CY7C1318KV18 Burst A0 Logic Write Write 20 19 A Reg (19:0) Reg A Address (19:1) Register 18 LD K Output CLK R/W Logic K Gen. Control C DOFF Read Data Reg. C 36 V CQ REF 18 18 Reg. Reg. Control CQ R/W Logic 18 18 BWS DQ 1:0 18 Reg. 17:0 Logic Block Diagram CY7C1320KV18 Burst A0 Logic Write Write 19 18 A Reg Reg (18:0) A Address (18:1) Register 36 LD K Output CLK R/W K Logic Gen. Control C DOFF Read Data Reg. C 72 CQ V 36 REF 36 Reg. Reg. Control CQ R/W Logic 36 36 BWS DQ 36 3:0 Reg. 35:0 Document Number: 001-58905 Rev. *L Page 2 of 32 Write Add. Decode Write Add. Decode Read Add. Decode Read Add. Decode