X-On Electronics has gained recognition as a prominent supplier of CY7C1371D-100AXC SRAM across the USA, India, Europe, Australia, and various other global locations. CY7C1371D-100AXC SRAM are a product manufactured by Infineon. We provide cost-effective solutions for SRAM, ensuring timely deliveries around the world.

CY7C1371D-100AXC Infineon

CY7C1371D-100AXC electronic component of Infineon
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Part No.CY7C1371D-100AXC
Manufacturer: Infineon
Category: SRAM
Description: SRAM 18Mb 100Mhz 512Kx36 Flow-Thru SRAM
Datasheet: CY7C1371D-100AXC Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 24.739 ea
Line Total: USD 24.74

Availability - 2
Ship by Thu. 08 Aug to Wed. 14 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2
Ship by Thu. 08 Aug to Wed. 14 Aug
MOQ : 1
Multiples : 1
1 : USD 24.739

   
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We are delighted to provide the CY7C1371D-100AXC from our SRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CY7C1371D-100AXC and other electronic components in the SRAM category and beyond.

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CY7C1371D CY7C1373D 18-Mbit (512 K 36/1 M 18) Flow-Through SRAM with NoBL Architecture 18-Mbit (512 K 36/1 M 18) Flow-through SRAM with NoBL Architecture Features Functional Description No Bus Latency (NoBL ) architecture eliminates dead cycles The CY7C1371D/CY7C1373D is a 3.3 V, 512 K 36/1 M 18 between write and read cycles synchronous flow through burst SRAM designed specifically to support unlimited true back-to-back read/write operations with Supports up to 133-MHz bus operations with zero wait states no wait state insertion. The CY7C1371D/CY7C1373D is Data is transferred on every clock equipped with the advanced No Bus Latency (NoBL) logic required to enable consecutive read/write operations with data Pin-compatible and functionally equivalent to ZBT devices being transferred on every clock cycle. This feature dramatically Internally self-timed output buffer control to eliminate the need improves the throughput of data through the SRAM, especially to use OE in systems that require frequent write-read transitions. All synchronous inputs pass through input registers controlled by Registered inputs for flow through operation the rising edge of the clock. The clock input is qualified by the Byte write capability clock enable (CEN) signal, which when deasserted suspends operation and extends the previous clock cycle. Maximum 3.3 V/2.5 V I/O power supply (V ) DDQ access delay from the clock rise is 6.5 ns (133-MHz device). Fast clock-to-output times Write operations are controlled by the two or four byte write 6.5 ns (for 133-MHz device) select (BW ) and a write enable (WE) input. All writes are X conducted with on-chip synchronous self-timed write circuitry. Clock enable (CEN) pin to enable clock and suspend operation Three synchronous chip enables (CE , CE , CE ) and an 1 2 3 Synchronous self-timed writes asynchronous output enable (OE) provide for easy bank Asynchronous output enable selection and output tristate control. To avoid bus contention, the output drivers are synchronously tristated during the data portion Available in JEDEC-standard Pb-free 100-pin TQFP, Pb-free of a write sequence. and non Pb-free 119-ball BGA, and 165-ball FBGA packages For a complete list of related documentation, click here. Three chip enables for simple depth expansion Automatic power-down feature available using ZZ mode or CE deselect IEEE 1149.1 JTAG-compatible boundary scan Burst capability linear or interleaved burst order Low standby power Selection Guide Description 133 MHz 100 MHz Unit Maximum access time 6.5 8.5 ns Maximum operating current 210 175 mA Maximum CMOS standby current 70 70 mA Errata: For information on silicon errata, see Errata on page 36. Details include trigger conditions, devices affected, and proposed workaround. Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 38-05556 Rev. *Q Revised November 17, 2014CY7C1371D CY7C1373D Logic Block Diagram CY7C1371D ADDRESS A0, A1, A REGISTER A1 A1 D1 Q1 A0 A0 D0 Q0 MODE BURST CE ADV/LD CLK C LOGIC C CEN WRITE ADDRESS REGISTER O U T P D S U A E T T ADV/LD N A S B MEMORY BW A WRITE E U WRITE REGISTRY S ARRAY DQs DRIVERS F BW B AND DATA COHERENCY T DQP A A F E CONTROL LOGIC DQP B BW C M E E DQP C P R R BW D DQP D S S I WE N E G INPUT E REGISTER OE READ LOGIC CE1 CE2 CE3 SLEEP ZZ CONTROL Document Number: 38-05556 Rev. *Q Page 2 of 40

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION

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