X-On Electronics has gained recognition as a prominent supplier of CY7C1423KV18-300BZXC SRAM across the USA, India, Europe, Australia, and various other global locations. CY7C1423KV18-300BZXC SRAM are a product manufactured by Infineon. We provide cost-effective solutions for SRAM, ensuring timely deliveries around the world.

CY7C1423KV18-300BZXC Infineon

CY7C1423KV18-300BZXC electronic component of Infineon
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Part No.CY7C1423KV18-300BZXC
Manufacturer: Infineon
Category: SRAM
Description: SRAM 36MB (1Mx36) 1.8v 300MHz DDR II SRAM
Datasheet: CY7C1423KV18-300BZXC Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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Obsolete
Availability Price Quantity
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MOQ : 1360
Multiples : 1
1360 : USD 52.9763
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MOQ : 8
Multiples : 8
8 : USD 54.13
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MOQ : 1360
Multiples : 1360
1360 : USD 46.2645
2720 : USD 46.253
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Obsolete
   
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We are delighted to provide the CY7C1423KV18-300BZXC from our SRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CY7C1423KV18-300BZXC and other electronic components in the SRAM category and beyond.

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CY7C1423KV18/CY7C1424KV18 36-Mbit DDR II SIO SRAM Two-Word Burst Architecture 36-Mbit DDR II SIO SRAM Two-Word Burst Architecture Features Configurations 36-Mbit density (2M 18, 1M 36) CY7C1423KV18 2M 18 CY7C1424KV18 1M 36 333 MHz clock for high bandwidth Two-word burst for reducing address bus frequency Functional Description Double data rate (DDR) interfaces (data transferred at The CY7C1423KV18, and CY7C1424KV18 are 1.8 V 666 MHz) at 333 MHz synchronous pipelined SRAMs, equipped with DDR II SIO (double data rate separate I/O) architecture. The DDR II SIO Two input clocks (K and K) for precise DDR timing consists of two separate ports: the read port and the write port to SRAM uses rising edges only access the memory array. The read port has data outputs to Two input clocks for output data (C and C) to minimize clock support read operations and the write port has data inputs to skew and flight time mismatches support write operations. The DDR II SIO has separate data inputs and data outputs to completely eliminate the need to Echo clocks (CQ and CQ) simplify data capture in high speed turnaround the data bus required with common I/O devices. systems Access to each port is accomplished through a common address Synchronous internally self timed writes bus. Addresses for read and write are latched on alternate rising edges of the input (K) clock. Write data is registered on the rising DDR II operates with 1.5 cycle read latency when DOFF is edges of both K and K. Read data is driven on the rising edges asserted HIGH of C and C if provided, or on the rising edge of K and K if C/C are not provided. Each address location is associated with two 18-bit Operates similar to DDR I device with 1 cycle read latency when words in the case of CY7C1423KV18, and two 36-bit words in DOFF is asserted LOW the case of CY7C1424KV18 that burst sequentially into or out of 1.8 V core power supply with HSTL inputs and outputs the device. Variable drive HSTL output buffers Asynchronous inputs include an output impedance matching input (ZQ). Synchronous data outputs are tightly matched to the Expanded HSTL output voltage (1.4 V to V ) DD two output echo clocks CQ/CQ, eliminating the need to capture Supports both 1.5 V and 1.8 V IO supply data separately from each individual DDR II SIO SRAM in the system design. Output data clocks (C/C) enable maximum Available in 165-ball FBGA package (13 15 1.4 mm) system clocking and data synchronization flexibility. Offered in both Pb-free and non Pb-free packages All synchronous inputs pass through input registers controlled by the K or K input clocks. All data outputs pass through output JTAG 1149.1 compatible test access port registers controlled by the C or C (or K or K in a single clock Phase locked loop (PLL) for accurate data placement domain) input clocks. Writes are conducted with on-chip synchronous self-timed write circuitry. For a complete list of related documentation, click here. Selection Guide Description 333 MHz 300 MHz 250 MHz Unit Maximum operating frequency 333 300 250 MHz Maximum operating current 18 490 460 430 mA 36 600 Not Offered 490 Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 001-57829 Rev. *J Revised January 4, 20181M x 18 Array 512K x 18 Array 1M x 18 Array 512K x 18 Array CY7C1423KV18/CY7C1424KV18 Logic Block Diagram CY7C1423KV18 18 D 17:0 Write Write Data Reg Data Reg 20 Address A (19:0) Register LD K Control R/W CLK Logic K Gen. C DOFF Read Data Reg. C CQ 36 R/W 18 CQ Reg. Reg. V 18 REF Control Logic 18 LD Reg. 18 Q 18 17:0 BWS 1:0 Logic Block Diagram CY7C1424KV18 36 D 35:0 Write Write Data Reg Data Reg 19 Address A (18:0) Register LD K Control R/W CLK Logic K Gen. C DOFF Read Data Reg. C CQ 72 R/W 36 CQ Reg. Reg. V 36 REF Control Logic 36 LD Reg. 36 Q 36 35:0 BWS 3:0 Document Number: 001-57829 Rev. *J Page 2 of 31 Write Add. Decode Write Add. Decode Read Add. Decode Read Add. Decode

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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