X-On Electronics has gained recognition as a prominent supplier of CY7C1460KV25-167BZXI SRAM across the USA, India, Europe, Australia, and various other global locations. CY7C1460KV25-167BZXI SRAM are a product manufactured by Infineon. We provide cost-effective solutions for SRAM, ensuring timely deliveries around the world.

CY7C1460KV25-167BZXI Infineon

CY7C1460KV25-167BZXI electronic component of Infineon
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Part No.CY7C1460KV25-167BZXI
Manufacturer: Infineon
Category: SRAM
Description: SRAM Sync SRAMs
Datasheet: CY7C1460KV25-167BZXI Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 71.72 ea
Line Total: USD 71.72 
Availability - 15
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
15
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 71.72
10 : USD 65.285
25 : USD 63.547
50 : USD 63.536
105 : USD 59.191
525 : USD 58.553
1050 : USD 58.542
2520 : USD 58.498

   
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We are delighted to provide the CY7C1460KV25-167BZXI from our SRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CY7C1460KV25-167BZXI and other electronic components in the SRAM category and beyond.

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CY7C1460KV25/CY7C1462KV25 CY7C1460KVE25/CY7C1462KVE25 36-Mbit (1M 36/2M 18) Pipelined SRAM with NoBL Architecture (With ECC) 36-Mbit (1M 36/2M 18) Pipelined SRAM with NoBL Architecture (With ECC) Features Functional Description The CY7C1460KV25/CY7C1462KV25/CY7C1460KVE25/ Pin-compatible and functionally equivalent to ZBT CY7C1462KVE25 are 2.5 V, 1M 36/2M 18 synchronous Supports 250 MHz bus operations with zero wait states pipelined burst SRAMs with No Bus Latency (NoBL) logic, respectively. They are designed to support unlimited true Available speed grades are 250 MHz, 200 MHz, and 167 MHz back-to-back read/write operations with no wait states. The Internally self-timed output buffer control to eliminate the need CY7C1460KV25/CY7C1462KV25/CY7C1460KVE25/ to use asynchronous OE CY7C1462KVE25 are equipped with the advanced NoBL logic required to enable consecutive read/write operations with data Fully registered (inputs and outputs) for pipelined operation being transferred on every clock cycle. This feature dramatically Byte Write capability improves the throughput of data in systems that require frequent write/read transitions. The CY7C1460KV25/CY7C1462KV25/ 2.5 V core power supply CY7C1460KVE25/CY7C1462KVE25 are pin-compatible and functionally equivalent to ZBT devices. 2.5 V I/O power supply All synchronous inputs pass through input registers controlled by Fast clock-to-output times the rising edge of the clock. All data outputs pass through output 2.5 ns (for 250 MHz device) registers controlled by the rising edge of the clock. The clock ) signal, which when Clock enable (CEN) pin to suspend operation input is qualified by the clock enable (CEN deasserted suspends operation and extends the previous clock Synchronous self-timed writes cycle. Write operations are controlled by the byte write selects BW BW for CY7C1460KV25/CY7C1460KVE25 and CY7C1460KV25, CY7C1462KV25, CY7C1460KVE25 and a d BW for CY7C1462KV25/CY7C1462KVE25 and a write CY7C1462KVE25 available in JEDEC-standard Pb-free BW a b 100-pin TQFP, and Pb-free and non Pb-free 165-ball FBGA enable (WE) input. All writes are conducted with on-chip packages. synchronous self-timed write circuitry. Three synchronous chip enables (CE , CE , CE ) and an IEEE 1149.1 JTAG-Compatible Boundary Scan 1 2 3 ) provide for easy bank asynchronous output enable (OE Burst capability linear or interleaved burst order selection and output three-state control. In order to avoid bus contention, the output drivers are synchronously three-stated ZZ sleep mode option during the data portion of a write sequence. On-chip error correction code (ECC) to reduce soft error rate (SER) Selection Guide Description 250 MHz 200 MHz 167 MHz Unit Maximum access time 2.5 3.2 3.4 ns Maximum operating current 18 220 190 170 mA 36 240 210 190 Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 001-66679 Rev. *J Revised February 7, 2018 CY7C1460KV25/CY7C1462KV25 CY7C1460KVE25/CY7C1462KVE25 Logic Block Diagram CY7C1460KV25 ADDRESS A0, A1, A REGISTER 0 A1 A1 D1 Q1 A0 BURST A0 D0 Q0 MODE LOGIC ADV/LD CLK C C CEN WRITE ADDRESS WRITE ADDRESS REGISTER 1 REGISTER 2 O O S U D U T E T A P N P U T U S T ADV/LD A T WRITE REGISTRY E R MEMORY AND DATA COHERENCY S B BWa WRITE E DQs ARRAY CONTROL LOGIC G U DRIVERS A T DQPa BWb I F BWc E DQPb M S F BWd T E DQPc P E E R R DQPd S WE R S I S E N E G INPUT INPUT E E REGISTER 1 REGISTER 0 OE READ LOGIC CE1 CE2 CE3 SLEEP ZZ CONTROL Logic Block Diagram CY7C1462KV25 ADDRESS A0, A1, A REGISTER 0 A1 A1 D1 Q1 A0 BURST A0 D0 Q0 MODE LOGIC ADV/LD CLK C C CEN WRITE ADDRESS WRITE ADDRESS REGISTER 1 REGISTER 2 O O U U T T P S P D U E U A ADV/LD T N T T WRITE REGISTRY S A R MEMORY E B AND DATA COHERENCY BWa WRITE E DQs ARRAY U S CONTROL LOGIC G DRIVERS A F DQPa T I M E F BWb S DQPb P E E T S R R E S I R N WE S G E E INPUT INPUT E E REGISTER 1 REGISTER 0 OE READ LOGIC CE1 CE2 CE3 Sleep ZZ Control Document Number: 001-66679 Rev. *J Page 2 of 32

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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