X-On Electronics has gained recognition as a prominent supplier of CY7C1613KV18-333BZXC SRAM across the USA, India, Europe, Australia, and various other global locations. CY7C1613KV18-333BZXC SRAM are a product manufactured by Infineon. We provide cost-effective solutions for SRAM, ensuring timely deliveries around the world.

CY7C1613KV18-333BZXC Infineon

CY7C1613KV18-333BZXC electronic component of Infineon
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Part No.CY7C1613KV18-333BZXC
Manufacturer: Infineon
Category: SRAM
Description: IC SRAM QDRII 144MB 165FBGA
Datasheet: CY7C1613KV18-333BZXC Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
525: USD 390.1799 ea
Line Total: USD 204844.45 
Availability - 0
MOQ: 525  Multiples: 525
Pack Size: 525
Availability Price Quantity
0
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 525
Multiples : 525
525 : USD 390.1799

   
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We are delighted to provide the CY7C1613KV18-333BZXC from our SRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CY7C1613KV18-333BZXC and other electronic components in the SRAM category and beyond.

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CY7C1613KV18/CY7C1615KV18 144-Mbit QDR II SRAM Four-Word Burst Architecture 144-Mbit QDR II SRAM Four-Word Burst Architecture Features Configuration Separate independent read and write data ports CY7C1613KV18 8 M 18 Supports concurrent transactions CY7C1615KV18 4 M 36 333 MHz clock for high bandwidth Functional Description Four-word burst for reducing address bus frequency The CY7C1613KV18, and CY7C1615KV18 are 1.8-V Double Data Rate (DDR) interfaces on both read and write ports synchronous pipelined SRAMs, equipped with QDR II (data transferred at 666 MHz) at 333 MHz architecture. QDR II architecture consists of two separate ports: the read port and the write port to access the memory array. The Two input clocks (K and K) for precise DDR timing read port has dedicated data outputs to support read operations SRAM uses rising edges only and the write port has dedicated data inputs to support write Two input clocks for output data (C and C) to minimize clock operations. QDR II architecture has separate data inputs and skew and flight time mismatches data outputs to completely eliminate the need to turn around the data bus that exists with common I/O devices. Each port can Echo clocks (CQ and CQ) simplify data capture in high speed be accessed through a common address bus. Addresses for systems read and write addresses are latched on alternate rising edges of the input (K) clock. Accesses to the QDR II read and write Single multiplexed address input bus latches address inputs ports are completely independent of one another. To maximize for read and write ports data throughput, both read and write ports are equipped with Separate port selects for depth expansion DDR interfaces. Each address location is associated with four 18-bit words (CY7C1613KV18), or 36-bit words Synchronous internally self-timed writes (CY7C1615KV18) that burst sequentially into or out of the Quad data rate (QDR ) II operates with 1.5-cycle read latency device. Because data can be transferred into and out of the when DOFF is asserted high device on every rising edge of both input clocks (K and K and C and C), memory bandwidth is maximized while simplifying Operates similar to a QDR I device with one-cycle read latency system design by eliminating bus turnarounds. when DOFF is asserted low Depth expansion is accomplished with port selects, which Available in 18, and 36 configurations enables each port to operate independently. Full data coherency, providing most current data All synchronous inputs pass through input registers controlled by the K or K input clocks. All data outputs pass through output Core V = 1.8 V (0.1 V) I/O V = 1.4 V to V DD DDQ DD registers controlled by the C or C (or K or K in a single clock Supports both 1.5 V and 1.8 V I/O supply domain) input clocks. Writes are conducted with on-chip synchronous self-timed write circuitry. Available in 165-ball fine-pitch ball grid array (FBGA) package (15 17 1.4 mm) For a complete list of related documentation, click here. Offered in both Pb-free and non Pb-free packages Variable drive high-speed transceiver logic (HSTL) output buffers JTAG 1149.1 compatible test access port (TAP) Phase Locked Loop (PLL) for accurate data placement Selection Guide Description 333 MHz 300 MHz 250 MHz Unit Maximum operating frequency 333 300 250 MHz Maximum operating current 18 760 710 Not Offered mA 36 1010 950 830 Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 001-44273 Rev. *L Revised January 2, 20182M x 18 Array 1M x 36 Array 2M x 18 Array 1M x 36 Array 2M x 18 Array 1M x 36 Array 2M x 18 Array 1M x 36 Array CY7C1613KV18/CY7C1615KV18 Logic Block Diagram CY7C1613KV18 18 D 17:0 Write Write Write Write 21 Address A Reg Reg Reg Reg (20:0) Register 21 Address A (20:0) Register RPS K Control CLK K Logic C Gen. DOFF Read Data Reg. C CQ 72 V 36 REF 18 CQ Reg. Reg. Control 18 WPS Logic 18 18 36 Q BWS Reg. 1:0 17:0 18 Logic Block Diagram CY7C1615KV18 36 D 35:0 Write Write Write Write 20 Address A Reg Reg Reg Reg (19:0) Register 20 Address A (19:0) Register RPS K Control CLK K Logic Gen. C DOFF Read Data Reg. C CQ 144 V 72 REF 36 CQ Reg. Reg. Control WPS 36 Logic 36 36 72 BWS Q 3:0 Reg. 35:0 36 Document Number: 001-44273 Rev. *L Page 2 of 32 Write Add. Decode Write Add. Decode Read Add. Decode Read Add. Decode

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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