X-On Electronics has gained recognition as a prominent supplier of CY7C2565XV18-633BZXC SRAM across the USA, India, Europe, Australia, and various other global locations. CY7C2565XV18-633BZXC SRAM are a product manufactured by Infineon. We provide cost-effective solutions for SRAM, ensuring timely deliveries around the world.

CY7C2565XV18-633BZXC Infineon

CY7C2565XV18-633BZXC electronic component of Infineon
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Part No.CY7C2565XV18-633BZXC
Manufacturer: Infineon
Category: SRAM
Description: IC SRAM QDRII 72MBIT 165FBGA
Datasheet: CY7C2565XV18-633BZXC Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 603.7418 ea
Line Total: USD 603.74 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 136
Multiples : 136
136 : USD 1272.5892

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 603.7418

   
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We are delighted to provide the CY7C2565XV18-633BZXC from our SRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CY7C2565XV18-633BZXC and other electronic components in the SRAM category and beyond.

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CY7C2563XV18/CY7C2565XV18 72-Mbit QDR II+ Xtreme SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT 72-Mbit QDR II+ Xtreme SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT Features Configurations Separate independent read and write data ports With Read Cycle Latency of 2.5 cycles Supports concurrent transactions CY7C2563XV18 4M 18 633 MHz clock for high bandwidth CY7C2565XV18 2M 36 Four-word burst for reducing address bus frequency Functional Description Double data rate (DDR) interfaces on both read and write ports The CY7C2563XV18 and CY7C2565XV18 are 1.8V (data transferred at 1266 MHz) at 633 MHz Synchronous Pipelined SRAMs, equipped with QDR II+ Available in 2.5 clock cycle latency architecture. Similar to QDR II architecture, QDR II+ architecture consists of two separate ports: the read port and the write port to Two input clocks (K and K) for precise DDR timing access the memory array. The read port has dedicated data SRAM uses rising edges only outputs to support read operations and the write port has dedicated data inputs to support write operations. QDR II+ Echo clocks (CQ and CQ) simplify data capture in high-speed architecture has separate data inputs and data outputs to systems completely eliminate the need to turn-around the data bus that Data valid pin (QVLD) to indicate valid data on the output exists with common I/O devices. Each port is accessed through a common address bus. Addresses for read and write addresses On-die termination (ODT) feature are latched on alternate rising edges of the input (K) clock. Supported for D , BWS , and K/K inputs x:0 x:0 Accesses to the QDR II+ Xtreme read and write ports are Single multiplexed address input bus latches address inputs completely independent of one another. To maximize data for read and write ports throughput, both read and write ports are equipped with DDR interfaces. Each address location is associated with four 18-bit Separate port selects for depth expansion words (CY7C2563XV18), or 36-bit words (CY7C2565XV18) that burst sequentially into or out of the device. Because data is Synchronous internally self-timed writes transferred into and out of the device on every rising edge of both QDR II+ Xtreme operates with 2.5 cycle read latency when input clocks (K and K), memory bandwidth is maximized while DOFF is asserted HIGH simplifying system design by eliminating bus turn-arounds. Operates similar to QDR I device with 1 cycle read latency when These devices have an on-die termination feature supported for DOFF is asserted LOW D , BWS , and K/K inputs, which helps eliminate external x:0 x:0 termination resistors, reduce cost, reduce board area, and Available in 18, and 36 configurations simplify board routing. Full data coherency, providing most current data Depth expansion is accomplished with port selects, which enables each port to operate independently. Core V = 1.8 V 0.1 V I/O V = 1.4 V to 1.6 V DD DDQ All synchronous inputs pass through input registers controlled by Supports 1.5 V I/O supply the K or K input clocks. All data outputs pass through output HSTL inputs and variable drive HSTL output buffers registers controlled by the K or K input clocks. Writes are conducted with on-chip synchronous self-timed write circuitry. Available in 165-ball FBGA package (13 15 1.4 mm) For a complete list of related documentation, click here. Offered in both Pb-free and non Pb-free packages JTAG 1149.1 compatible test access port Phase-locked loop (PLL) for accurate data placement Selection Guide Description 633 MHz 600 MHz Unit Maximum Operating Frequency 633 600 MHz Maximum Operating Current 18 1165 1100 mA 36 1660 1570 Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 001-68997 Rev. *G Revised November 23, 20171M x 18 Array 512K x 36 Array 1M x 18 Array 512K x 36 Array 1M x 18 Array 512K x 36 Array 1M x 18 Array 512K x 36 Array CY7C2563XV18/CY7C2565XV18 Logic Block Diagram CY7C2563XV18 18 D 17:0 Write Write Write Write 20 Address A Reg Reg Reg Reg (19:0) Register 20 Address A (19:0) Register RPS K Control CLK K Logic Gen. DOFF Read Data Reg. CQ 72 V 36 REF 18 CQ Reg. Reg. Control 18 WPS Logic 18 18 36 Q BWS Reg. 1:0 17:0 18 QVLD Logic Block Diagram CY7C2565XV18 36 D 35:0 Write Write Write Write 19 Address A Reg Reg Reg Reg (18:0) Register 19 Address A (18:0) Register RPS K Control CLK K Logic Gen. DOFF Read Data Reg. CQ 144 V 72 REF CQ 36 Reg. Reg. Control WPS 36 Logic 36 72 36 BWS Q Reg. 3:0 35:0 36 QVLD Document Number: 001-68997 Rev. *G Page 2 of 29 Write Add. Decode Write Add. Decode Read Add. Decode Read Add. Decode

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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