X-On Electronics has gained recognition as a prominent supplier of DD250S65K3 IGBT Modules across the USA, India, Europe, Australia, and various other global locations. DD250S65K3 IGBT Modules are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Modules, ensuring timely deliveries around the world.

DD250S65K3 Infineon

DD250S65K3 electronic component of Infineon
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See Product Specifications
Part No.DD250S65K3
Manufacturer: Infineon
Category: IGBT Modules
Description: IGBT Modules IHV IHM T XHP 3 3-6 5K
Datasheet: DD250S65K3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1397.286 ea
Line Total: USD 1397.29 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 1397.286

   
Manufacturer
Product Category
Product
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Maximum Operating Temperature
Minimum Operating Temperature
Packaging
Pd - Power Dissipation
Hts Code
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DD250S65K3 from our IGBT Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DD250S65K3 and other electronic components in the IGBT Modules category and beyond.

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DD250S65K3 high insulated module V = 6500V CES I = 250A / I = 500A C nom CRM Potential Applications Medium voltage converters Traction drives Mechanical Features 10.4kV 10 Package with enhanced insulation of 10.4kV AC 10s CTI > 600 Package with CTI > 600 T = -55C Extended storage temperature down to T = stg stg -55C (AlSiC) AlSiC base plate for increased thermal cycling capability High creepage and clearance distances Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 Datasheet Please read the Important Notice and Warnings at the end of this document V 3.1 www.infineon.com 2018-01-15DD250S65K3 , / Diode, Inverter / Maximum Rated Values Tvj = 125C 6500 Repetitive peak reverse voltage T = 25C V 6500 V vj RRM T = -50C 5900 vj I 250 A F Continuous DC forward current tP = 1 ms IFRM 500 A Repetitive peak forward current I2t- V = 0 V, t = 10 ms, T = 125C It 52,0 kAs R P vj It - value Tvj = 125C PRQM 1000 kW Maximum power dissipation t 10,0 s on min Minimum turn-on time / Characteristic Values min. typ. max. I = 250 A, V = 0 V T = 25C 3,00 3,50 V F GE vj V F Forward voltage IF = 250 A, VGE = 0 V Tvj = 125C 2,95 3,50 V IF = 250 A, - diF/dt = 1000 A/s (Tvj=125C) Tvj = 25C 370 A Peak reverse recovery current V = 3600 V T = 125C I 400 A R vj RM VGE = -15 V IF = 250 A, - diF/dt = 1000 A/s (Tvj=125C) Tvj = 25C 290 C Recovered charge V = 3600 V T = 125C Q 540 C R vj r VGE = -15 V IF = 250 A, - diF/dt = 1000 A/s (Tvj=125C) Tvj = 25C 470 mJ Reverse recovery energy V = 3600 V T = 125C E 1000 mJ R vj rec VGE = -15 V / per diode RthJC 55,8 K/kW Thermal resistance, junction to case / per diode R 42,0 K/kW thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) Tvj op -50 125 C Temperature under switching conditions Datasheet 2 V 3.1 2018-01-15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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