DD500S33HE3 IHM-B Modul IHM-B module V = 3300V CES I = 500A / I = 1000A C nom CRM Typische Anwendungen Typical Applications Mittelspannungsantriebe Medium voltage converters Motorantriebe Motor drives Traktionsumrichter Traction drives USV-Systeme UPS systems Windgeneratoren Wind turbines Elektrische Eigenschaften Electrical Features Groe DC-Festigkeit High DC stability Niedrige Schaltverluste Low switching losses Mechanische Eigenschaften Mechanical Features AlSiC Bodenplatte fr erhhte thermische AlSiC base plate for increased thermal cycling Lastwechselfestigkeit capability Gehuse mit CTI > 600 Package with CTI > 600 IHM B Gehuse IHM B housing Isolierte Bodenplatte Isolated base plate Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 Datasheet Please read the Important Notice and Warnings at the end of this document V 3.2 www.infineon.com 2016-12-06DD500S33HE3 Diode, Wechselrichter / Diode, Inverter Hchstzulssige Werte / Maximum Rated Values Periodische Spitzensperrspannung Tvj = -40C 3300 V V RRM Repetitive peak reverse voltage T = 150C 3300 vj Dauergleichstrom IF 500 A Continuous DC forward current Periodischer Spitzenstrom t = 1 ms I 1000 A P FRM Repetitive peak forward current Grenzlastintegral V = 0 V, t = 10 ms, T = 125C 65,0 kAs R P vj It It - value VR = 0 V, tP = 10 ms, Tvj = 150C 61,0 kAs Spitzenverlustleistung T = 125C P 800 kW vj RQM Maximum power dissipation Mindesteinschaltdauer t 10,0 s on min Minimum turn-on time Charakteristische Werte / Characteristic Values min. typ. max. Durchlassspannung IF = 500 A, VGE = 0 V Tvj = 25C 3,10 3,85 V Forward voltage I = 500 A, V = 0 V T = 125C V 2,75 3,25 V F GE vj F IF = 500 A, VGE = 0 V Tvj = 150C 2,65 V Rckstromspitze IF = 500 A, - diF/dt = 1500 A/s (Tvj=150C) Tvj = 25C 500 A Peak reverse recovery current V = 1800 V T = 125C I 600 A R vj RM VGE = -15 V Tvj = 150C 625 A Sperrverzgerungsladung IF = 500 A, - diF/dt = 1500 A/s (Tvj=150C) Tvj = 25C 225 C Recovered charge V = 1800 V T = 125C Q 450 C R vj r VGE = -15 V Tvj = 150C 525 C Abschaltenergie pro Puls IF = 500 A, - diF/dt = 1500 A/s (Tvj=150C) Tvj = 25C 225 mJ Reverse recovery energy V = 1800 V T = 125C E 550 mJ R vj rec VGE = -15 V Tvj = 150C 650 mJ Wrmewiderstand, Chip bis Gehuse pro Diode / per diode RthJC 43,1 K/kW Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro Diode / per diode R 16,5 K/kW thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) Temperatur im Schaltbetrieb Tvj op -40 150 C Temperature under switching conditions Datasheet 2 V 3.2 2016-12-06