X-On Electronics has gained recognition as a prominent supplier of DD750S65K3 IGBT Modules across the USA, India, Europe, Australia, and various other global locations. DD750S65K3 IGBT Modules are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Modules, ensuring timely deliveries around the world.

DD750S65K3 Infineon

DD750S65K3 electronic component of Infineon
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See Product Specifications
Part No.DD750S65K3
Manufacturer: Infineon
Category: IGBT Modules
Description: IGBT Modules IGBT Module 750A 6500V
Datasheet: DD750S65K3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2022.3239 ea
Line Total: USD 2022.32 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 2022.3239

   
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We are delighted to provide the DD750S65K3 from our IGBT Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DD750S65K3 and other electronic components in the IGBT Modules category and beyond.

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DD750S65K3 hochisolierendes Modul high insulated module V = 6500V CES I = 750A / I = 1500A C nom CRM Potentielle Anwendungen Potential Applications Mittelspannungsantriebe Medium voltage converters Traktionsumrichter Traction drives Mechanische Eigenschaften Mechanical Features AlSiC Bodenplatte fr erhhte thermische AlSiC base plate for increased thermal cycling Lastwechselfestigkeit capability Erweiterter Lagertemperaturbereich bis zu T = Extended storage temperature down to T = stg stg -55C -55C Gehuse mit CTI > 600 Package with CTI > 600 Gehuse mit erweiterten Package with enhanced insulation of 10.4kV AC Isolationseigenschaften von 10,4kV AC 10s 10s Groe Luft- und Kriechstrecken High creepage and clearance distances Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 Datasheet Please read the Important Notice and Warnings at the end of this document V 3.1 www.infineon.com 2018-01-15DD750S65K3 Diode, Wechselrichter / Diode, Inverter Hchstzulssige Werte / Maximum Rated Values Periodische Spitzensperrspannung Tvj = 125C 6500 Repetitive peak reverse voltage T = 25C V 6500 V vj RRM T = -50C 5900 vj Dauergleichstrom I 750 A F Continuous DC forward current Periodischer Spitzenstrom tP = 1 ms IFRM 1500 A Repetitive peak forward current Grenzlastintegral V = 0 V, t = 10 ms, T = 125C It 470 kAs R P vj It - value Spitzenverlustleistung Tvj = 125C PRQM 3000 kW Maximum power dissipation Mindesteinschaltdauer t 10,0 s on min Minimum turn-on time Charakteristische Werte / Characteristic Values min. typ. max. Durchlassspannung I = 750 A, V = 0 V T = 25C 3,00 3,50 V F GE vj V F Forward voltage IF = 750 A, VGE = 0 V Tvj = 125C 2,95 3,50 V Rckstromspitze IF = 750 A, - diF/dt = 3000 A/s (Tvj=125C) Tvj = 25C 1100 A Peak reverse recovery current V = 3600 V T = 125C I 1200 A R vj RM VGE = -15 V Sperrverzgerungsladung IF = 750 A, - diF/dt = 3000 A/s (Tvj=125C) Tvj = 25C 850 C Recovered charge V = 3600 V T = 125C Q 1600 C R vj r VGE = -15 V Abschaltenergie pro Puls IF = 750 A, - diF/dt = 3000 A/s (Tvj=125C) Tvj = 25C 1400 mJ Reverse recovery energy V = 3600 V T = 125C E 3000 mJ R vj rec VGE = -15 V Wrmewiderstand, Chip bis Gehuse pro Diode / per diode RthJC 18,6 K/kW Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro Diode / per diode R 16,0 K/kW thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) Temperatur im Schaltbetrieb Tvj op -50 125 C Temperature under switching conditions Datasheet 2 V 3.1 2018-01-15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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