Technische Information / Technical Information Dioden-Modul mit Chopper-IGBT DD B6U 134 N 16 RR N B6 Diode Module with Chopper-IGBT Elektrische Eigenschaften / Electrical properties Hchstzulssige Werte / Maximum rated values Gleichrichterdiode / Rectifierdiode T = - 40C...T Periodische Spitzensperrspannung vj vj max V 1600 V RRM repetitive peak reverse voltage Durchlastrom-Grenzeffektivwert (pro Element) I 80 A FRMSM RMS forward current (per chip) T = 100C Ausgangsstrom C I 134 A d output current T = 25C, t = 10ms Stostrom-Grenzwert vj p I 650 A FSM T = T , t = 10ms surge forward current vj vj max p 550 A T = 25C, t = 10ms Grenzlastintegral vj p It 2100 As T = T , t = 10ms It-value vj vj max p 1500 As IGBT Kollektor-Emitter-Sperrspannung V 1200 V CES collector-emitter voltage T = 80C Kollektor-Dauergleichstrom C I 70 A C DC-collector current t = 1ms, T = 80C Periodischer Kollektor-Spitzenstrom p C I 150 A CRM repetitive peak collektor current T = 25C Gesamt-Verlustleistung C P 500 W tot total power dissipation Gate-Emitter Spitzenspannung V 20 V GE gate-emitter peak voltage Schnelle Diode / Fast diode Periodische Spitzensperrspannung V 1200 V RRM repetitive peak reverse voltage T = 80C Dauergleichstrom C I 35 A F DC forward current t = 1ms Periodischer Spitzenstrom p I 70 A FRM repetitive peak forward current Modul RMS, f = 50Hz, t = 1min Isolations-Prfspannung V 2,5 kV ISOL NTC connected to baseplate insulation test voltage Charakteristische Werte / Characteristic values Gleichrichterdiode / Rectifierdiode min. typ. max. T = T , i = 100A Durchlaspannung vj vj max F v 1,35 V F forward voltage T = T Schleusenspannung vj vj max V 0,75 V (TO) threshold voltage T = T Ersatzwiderstand vj vj max r 6,3 m T forward slope resistance T = T v V Sperrstrom vj vj max, R = RRM i 5 mA R reverse current T = 25C Modul Leitungswiderstand, Anschlsse-Chip C R 1 m AA +KK lead resistance, terminals-chip prepared by: Ralf Jrke date of publication: 13.12.2000 approved by: Lothar Kleber revision: 1 BIP AM R. Jrke 19. Dez 00 A 34/00 Seite/page 1(12)Technische Information / Technical Information Dioden-Modul mit Chopper-IGBT DD B6U 134 N 16 RR N B6 Diode Module with Chopper-IGBT Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values IGBT min. typ. max. Kollektor-Emitter Sttigungsspannung T = 25C, i = 70A, v = 15V v 2,05 2,75 V vj C GE CE sat T = 125C, i = 70A, v = 15V collector-emitter saturation voltage 2,40 vj C GE Gate-Emitter-Schwellspannung T = 25C, i = 3mA, v = v v 4,5 5,5 6,5 V vj C GE CE GE(TO) gate-emitter threshold voltage T = 25C, f = 1MHz, C Eingangskapazitt 5,1 nF vj 0 ies v = 25V, v = 0V input capacitance CE GE T = 25C, v = 1200V, v = 0V i Kollektor-Emitter Reststrom 10 500 A vj CE GE CES T = 125C, v = 1200V, v = 0V collector-emitter cut-off current vj CE GE 500 T = 25C, v = 0V, v = 20V i Gate-Emitter Reststrom vj CE GE 400 nA GES gate leakage current T = 25C, v = 0V, v = 20V i Emitter-Gate Reststrom vj CE EG 400 nA EGS gate-leakage current Schnelle Diode / Fast diode T = 25C, i = 35A v Durchlaspannung vj F F 1,85 2,40 V forward voltage T = 125C, i = 35A 1,75 vj F Sperrverzgerungsladung i = 35A, -di/dt = 900A/s, v = 600V Q FM R r recovered charge T = 25C 3,6 As vj T = 125C 7,6 As vj Thermische Eigenschaften / Thermal properties R Innerer Wrmewiderstand Gleichrichter / Rectifier, = 120rect max. 0,70 C/W thJC thermal resistance, junction to case Transistor / Transistor, DC max. 0,25 C/W Schnelle Diode / Fast diode, DC max. 0,80 C/W Gleichrichter / Rectifier R bergangs-Wrmewiderstand max. 0,25 C/W thCK thermal resistance, case to heatsink Transistor / Transistor max. 0,16 C/W Schnelle Diode / Fast diode max. 0,24 C/W Hchstzulssige Sperrschichttemperatur T 150 C vj max max. junction temperature Betriebstemperatur T - 40...+150 C c op operating temperature Lagertemperatur T - 40...+150 C stg storage temperature BIP AM R. Jrke 19. Dez 00 Seite/page 2(12)