DF1000R17IE4 PrimePACK3 /IGBT4 PrimePACK3 module with Trench/Fieldstop IGBT4 and Emitter Controlled diode V = 1700V CES I = 1000A / I = 2000A C nom CRM Potential Applications 3-level-applications High power converters Chopper applications Wind turbines Electrical Features Tvj op = 150C Tvj op = 150C V Low V CEsat CEsat Low switching losses T vj op Extended operating temperature Tvj op High current density High DC stability Mechanical Features CTI > 400 Package with CTI > 400 Standard housing Copper base plate High power density High power and thermal cycling capability High creepage and clearance distances Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 Datasheet Please read the Important Notice and Warnings at the end of this document V 3.1 www.infineon.com 2018-11-26DF1000R17IE4 IGBT, - / IGBT, Brake-Chopper / Maximum Rated Values T = 25C V 1700 V vj CES Collector-emitter voltage TC = 100C, Tvj max = 175C ICDC 1000 A Continuous DC collector current t = 1 ms I 2000 A P CRM Repetitive peak collector current VGES +/-20 V Gate-emitter peak voltage / Characteristic Values min. typ. max. IC = 1000 A Tvj = 25C 2,00 2,45 V Collector-emitter saturation voltage V = 15 V T = 125C V 2,35 2,80 V GE vj CE sat Tvj = 150C 2,45 2,95 V IC = 36,0 mA, VCE = VGE, Tvj = 25C VGEth 5,20 5,80 6,40 V Gate threshold voltage V = -15 / 15 V Q 10,0 C GE G Gate charge Tvj = 25C RGint 1,5 Internal gate resistor f = 1000 kHz, T = 25C, V = 25 V, V = 0 V C 81,0 nF vj CE GE ies Input capacitance f = 1000 kHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 2,60 nF Reverse transfer capacitance - V = 1700 V, V = 0 V, T = 25C I 5,0 mA CE GE vj CES Collector-emitter cut-off current - VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 400 nA Gate-emitter leakage current () IC = 1000 A, VCE = 900 V Tvj = 25C 0,55 s t d on Turn-on delay time, inductive load V = -15 / 15 V T = 125C 0,60 s GE vj R = 1,2 T = 150C 0,60 s Gon vj () IC = 1000 A, VCE = 900 V Tvj = 25C 0,10 s t r Rise time, inductive load V = -15 / 15 V T = 125C 0,12 s GE vj R = 1,2 T = 150C 0,12 s Gon vj () I = 1000 A, V = 900 V T = 25C 1,00 s C CE vj t d off Turn-off delay time, inductive load V = -15 / 15 V T = 125C 1,25 s GE vj R = 1,8 T = 150C 1,30 s Goff vj () I = 1000 A, V = 900 V T = 25C 0,29 s C CE vj t f Fall time, inductive load V = -15 / 15 V T = 125C 0,50 s GE vj R = 1,8 T = 150C 0,59 s Goff vj () I = 1000 A, V = 900 V, L = 30 nH T = 25C 265 mJ C CE vj Turn-on energy loss per pulse di/dt = 8000 A/s (T = 150C) T = 125C E 390 mJ vj vj on V = -15 / 15 V, R = 1,2 T = 150C 415 mJ GE Gon vj ( I = 1000 A, V = 900 V, L = 30 nH T = 25C 200 mJ C CE vj Turn-off energy loss per pulse du/dt = 3000 V/s (T = 150C) T = 125C E 295 mJ vj vj off V = -15 / 15 V, R = 1,8 T = 150C 330 mJ GE Goff vj V 15 V, V = 1000 V GE CC I SC SC data V = V -L di/dt t 10 s, T = 150C 4000 A CEmax CES sCE P vj IGBT / per IGBT RthJC 24,0 K/kW Thermal resistance, junction to case IGBT / per IGBT R 9,00 K/kW thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease Tvj op -40 150 C Temperature under switching conditions Datasheet 2 V 3.1 2018-11-26