/ Technical Information IGBT- DF120R12W2H3 B27 IGBT-Module J V = 1200V CES I = 40A / I = 80A C nom CRM Typical Applications Solar applications Electrical Features IGBT H3 High speed IGBT H3 Low switching losses Mechanical Features 3 kV 1 3 kV AC 1min insulation Al O Al O substrate with low thermal resistance 2 3 2 3 NTC Integrated NTC temperature sensor Compact design PressFIT PressFIT contact technology Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: CM date of publication: 2016-04-04 approved by: AKDA revision: V3.1 UL approved (E83335) 1 / Technical Information IGBT- DF120R12W2H3 B27 IGBT-Module A / Inverse-polarity protection diode A / Maximum Rated Values T = 25C V 1200 V vj RRM Repetitive peak reverse voltage () T = 80C I 50 A C FRMSM Maximum RMS forward current per chip T = 80C I 60 A C RMSM Maximum RMS current at rectifier output t = 10 ms, T = 25C 360 A p vj I FSM Surge forward current tp = 10 ms, Tvj = 150C 290 A I2t- tp = 10 ms, Tvj = 25C 650 As It It - value t = 10 ms, T = 150C 420 As p vj / Characteristic Values min. typ. max. T = 150C, I = 30 A V 0,95 V vj F F Forward voltage Tvj = 150C, VR = 1200 V IR 0,10 mA Reverse current / per diode R 0,800 0,900 K/W thJC Thermal resistance, junction to case / per diode RthCH 0,800 K/W Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) T -40 150 C vj op Temperature under switching conditions B / Inverse-polarity protection diode B / Maximum Rated Values T = 25C V 1200 V vj RRM Repetitive peak reverse voltage () TC = 80C IFRMSM 30 A Maximum RMS forward current per chip T = 80C I 60 A C RMSM Maximum RMS current at rectifier output tp = 10 ms, Tvj = 25C 290 A IFSM Surge forward current t = 10 ms, T = 150C 245 A p vj I2t- t = 10 ms, T = 25C 420 As p vj It It - value tp = 10 ms, Tvj = 150C 300 As / Characteristic Values min. typ. max. Tvj = 150C, IF = 20 A VF 1,00 V Forward voltage T = 150C, V = 1200 V I 0,10 mA vj R R Reverse current / per diode RthJC 1,20 1,35 K/W Thermal resistance, junction to case / per diode R 1,15 K/W thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease T -40 150 C vj op Temperature under switching conditions prepared by: CM date of publication: 2016-04-04 approved by: AKDA revision: V3.1 2