/ Technical Information IGBT- DF1400R12IP4D IGBT-modules PrimePACK3 /IGBT4 PrimePACK3 module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode / Preliminary Data VCES = 1200V I = 1400A / I = 2800A C nom CRM Typical Applications Chopper Applications Electrical Features T vj op Extended Operation Temperature Tvj op High DC Stability High Short Circuit Capability, Self Limiting Short Circuit Current V V with positive Temperature Coefficient CEsat CEsat VCEsat Low VCEsat Mechanical Features 4 kV 1 4 kV AC 1min Insulation CTI > 400 Package with CTI > 400 High Creepage and Clearance Distances High Power and Thermal Cycling Capability High Power Density Substrate for Low Thermal Resistance Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: AC date of publication: 2013-11-05 approved by: MS revision: 2.2 UL approved (E83335) 1 / Technical Information IGBT- DF1400R12IP4D IGBT-modules Preliminary Data IGBT, / IGBT-Chopper / Maximum Rated Values T = 25C V 1200 V vj CES Collector-emitter voltage T = 100C, T = 175C I 1400 A C vj max C nom Continuous DC collector current t = 1 ms I 2800 A P CRM Repetitive peak collector current T = 25C, T = 175C P 7,70 kW C vj max tot Total power dissipation VGES +/-20 V Gate-emitter peak voltage / Characteristic Values min. typ. max. I = 1400 A, V = 15 V T = 25C 1,75 2,10 V C GE vj Collector-emitter saturation voltage I = 1400 A, V = 15 V T = 125C V 2,05 V C GE vj CE sat I = 1400 A, V = 15 V T = 150C 2,15 V C GE vj I = 49,0 mA, V = V , T = 25C V 5,0 5,8 6,5 V C CE GE vj GEth Gate threshold voltage VGE = -15 V ... +15 V QG 9,60 C Gate charge T = 25C R 0,8 vj Gint Internal gate resistor f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 82,0 nF Input capacitance f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 4,60 nF vj CE GE res Reverse transfer capacitance - VCE = 1200 V, VGE = 0 V, Tvj = 25C ICES 5,0 mA Collector-emitter cut-off current - V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current () I = 1400 A, V = 600 V T = 25C 0,20 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,21 s R = 1,0 T = 150C 0,21 s Gon vj () I = 1400 A, V = 600 V T = 25C 0,12 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,13 s R = 1,0 T = 150C 0,13 s Gon vj () I = 1400 A, V = 600 V T = 25C 0,87 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 0,95 s R = 1,0 T = 150C 0,97 s Goff vj () I = 1400 A, V = 600 V T = 25C 0,20 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,23 s R = 1,0 T = 150C 0,23 s Goff vj () I = 1400 A, V = 600 V, L = 30 nH T = 25C 65,0 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 8600 A/s (Tvj = 150C) Tvj = 125C Eon 80,0 mJ R = 1,0 T = 150C 95,0 mJ Gon vj ( I = 1400 A, V = 600 V, L = 30 nH T = 25C 180 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 2700 V/s (Tvj = 150C)Tvj = 125C Eoff 250 mJ R = 1,0 T = 150C 280 mJ Goff vj V 15 V, V = 800 V GE CC ISC SC data VCEmax = VCES -LsCE di/dt tP 10 s, Tvj = 150C 5600 A IGBT / per IGBT R 19,5 K/kW thJC Thermal resistance, junction to case IGBT / per IGBT R 9,30 K/kW thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) T -40 150 C vj op Temperature under switching conditions prepared by: AC date of publication: 2013-11-05 approved by: MS revision: 2.2 2