/ Technical Information IGBT- DF150R12RT4 IGBT-modules 34mm /IGBT4 34mm module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode / Preliminary Data VCES = 1200V I = 150A / I = 300A C nom CRM Typical Applications High Frequency Switching Application Motor Drives UPS UPS Systems Electrical Features T Extended Operation Temperature T vj op vj op Low Switching Losses V Low V CEsat CEsat T = 150C T = 150C vj op vj op V V with positive Temperature Coefficient CEsat CEsat Mechanical Features Isolated Base Plate Standard Housing Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: MK date of publication: 2013-11-05 approved by: WR revision: 2.2 1 / Technical Information IGBT- DF150R12RT4 IGBT-modules Preliminary Data IGBT, - / IGBT, Brake-Chopper / Maximum Rated Values T = 25C V 1200 V vj CES Collector-emitter voltage T = 100C, T = 175C I 150 A C vj max C nom Continuous DC collector current t = 1 ms I 300 A P CRM Repetitive peak collector current T = 25C, T = 175C P 790 W C vj max tot Total power dissipation VGES +/-20 V Gate-emitter peak voltage / Characteristic Values min. typ. max. I = 150 A, V = 15 V T = 25C 1,75 2,15 V C GE vj Collector-emitter saturation voltage I = 150 A, V = 15 V T = 125C V 2,05 V C GE vj CE sat I = 150 A, V = 15 V T = 150C 2,10 V C GE vj I = 5,70 mA, V = V , T = 25C V 5,2 5,8 6,4 V C CE GE vj GEth Gate threshold voltage VGE = -15 V ... +15 V QG 0,90 C Gate charge T = 25C R 5,0 vj Gint Internal gate resistor f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 9,30 nF Input capacitance f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 0,50 nF vj CE GE res Reverse transfer capacitance - VCE = 1200 V, VGE = 0 V, Tvj = 25C ICES 1,0 mA Collector-emitter cut-off current - V = 0 V, V = 20 V, T = 25C I 100 nA CE GE vj GES Gate-emitter leakage current () I = 150 A, V = 600 V T = 25C 0,13 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,15 s R = 1,1 T = 150C 0,15 s Gon vj () I = 150 A, V = 600 V T = 25C 0,02 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,03 s R = 1,1 T = 150C 0,035 s Gon vj () I = 150 A, V = 600 V T = 25C 0,30 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 0,38 s R = 1,1 T = 150C 0,40 s Goff vj () I = 150 A, V = 600 V T = 25C 0,045 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,08 s R = 1,1 T = 150C 0,09 s Goff vj () I = 150 A, V = 600 V, L = 30 nH T = 25C 8,50 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 3400 A/s (Tvj = 150C) Tvj = 125C Eon 13,5 mJ R = 1,1 T = 150C 15,0 mJ Gon vj ( I = 150 A, V = 600 V, L = 30 nH T = 25C 8,50 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 3300 V/s (Tvj = 150C)Tvj = 125C Eoff 13,5 mJ R = 1,1 T = 150C 15,5 mJ Goff vj V 15 V, V = 800 V GE CC ISC SC data VCEmax = VCES -LsCE di/dt tP 10 s, Tvj = 150C 600 A IGBT / per IGBT R 0,19 K/W thJC Thermal resistance, junction to case IGBT / per IGBT R 0,092 K/W thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) T -40 150 C vj op Temperature under switching conditions prepared by: MK date of publication: 2013-11-05 approved by: WR revision: 2.2 2