/ Technical Information IGBT- DF200R12PT4 B6 IGBT-modules EconoPACK4 /IGBT4 NTC EconoPACK4 module with trench/fieldstop IGBT4 and Emitter Controlled Diode and NTC V = 1200V CES I = 200A / I = 400A C nom CRM Typical Applications 3-Level-Applications High Frequency Switching Application Chopper Applications Motor Drives Solar Applications UPS UPS Systems Electrical Features T vj op Extended Operation Temperature Tvj op IGBT4 Trench IGBT 4 T = 150C T = 150C vj op vj op V V with positive Temperature Coefficient CEsat CEsat Mechanical Features 2.5 kV 1 2.5 kV AC 1min Insulation High mechanical robustness NTC Integrated NTC temperature sensor Isolated Base Plate Standard Housing Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: KY date of publication: 2013-11-11 approved by: MK revision: 3.0 UL approved (E83335) 1 / Technical Information IGBT- DF200R12PT4 B6 IGBT-modules IGBT, - / IGBT, Brake-Chopper / Maximum Rated Values T = 25C V 1200 V vj CES Collector-emitter voltage T = 95C, T = 175C I 200 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 175C IC 300 A t = 1 ms I 400 A P CRM Repetitive peak collector current T = 25C, T = 175C P 1100 W C vj max tot Total power dissipation VGES +/-20 V Gate-emitter peak voltage / Characteristic Values min. typ. max. I = 200 A, V = 15 V T = 25C 1,75 2,10 V C GE vj Collector-emitter saturation voltage I = 200 A, V = 15 V T = 125C V 2,05 V C GE vj CE sat I = 200 A, V = 15 V T = 150C 2,10 V C GE vj I = 3,80 mA, V = V , T = 25C V 5,2 5,8 6,4 V C CE GE vj GEth Gate threshold voltage VGE = -15 V ... +15 V QG 1,65 C Gate charge T = 25C R 3,8 vj Gint Internal gate resistor f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 12,5 nF Input capacitance f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 0,54 nF vj CE GE res Reverse transfer capacitance - VCE = 1200 V, VGE = 0 V, Tvj = 25C ICES 0,015 mA Collector-emitter cut-off current - V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current () I = 200 A, V = 600 V T = 25C 0,19 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,20 s R = 1,0 T = 150C 0,205 s Gon vj () I = 200 A, V = 600 V T = 25C 0,035 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,043 s R = 1,0 T = 150C 0,044 s Gon vj () I = 200 A, V = 600 V T = 25C 0,365 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 0,45 s R = 1,0 T = 150C 0,47 s Goff vj () I = 200 A, V = 600 V T = 25C 0,042 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,072 s R = 1,0 T = 150C 0,078 s Goff vj () I = 200 A, V = 600 V, L = 30 nH T = 25C 11,0 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 4500 A/s (Tvj = 150C) Tvj = 125C Eon 17,5 mJ R = 1,0 T = 150C 20,0 mJ Gon vj ( I = 200 A, V = 600 V, L = 30 nH T = 25C 14,0 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 3500 V/s (Tvj = 150C)Tvj = 125C Eoff 21,0 mJ R = 1,0 T = 150C 23,0 mJ Goff vj V 15 V, V = 800 V GE CC ISC SC data VCEmax = VCES -LsCE di/dt tP 10 s, Tvj = 150C 920 A IGBT / per IGBT R 0,14 K/W thJC Thermal resistance, junction to case IGBT / per IGBT R 0,071 K/W thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) T -40 150 C vj op Temperature under switching conditions prepared by: KY date of publication: 2013-11-11 approved by: MK revision: 3.0 2