DF200R12W1H3FB11BOMA1 Infineon

DF200R12W1H3F B11 EasyPACK Modul mit schnellem Trench/Feldstopp High-Speed 3 IGBT und SiC Diode und PressFIT / NTC EasyPACK module with fast Trench/Fieldstop High-Speed 3 IGBT and SiC diode and PressFIT / NTC J V = 1200V CES I = 30A / I = 60A C nom CRM Typische Anwendungen Typical Applications Solar Anwendungen Solar applications Elektrische Eigenschaften Electrical Features CoolSiC (TM) Schottky Diode Gen 5 CoolSiC (TM) Schottky diode gen 5 High Speed IGBT H3 High speed IGBT H3 Niedrige Schaltverluste Low switching losses Mechanische Eigenschaften Mechanical Features Al2O3 Substrat mit kleinem thermischen Al2O 3 substrate with low thermal resistance Widerstand Integrierter NTC Temperatur Sensor Integrated NTC temperature sensor Kompaktes Design Compact design PressFIT Verbindungstechnik PressFIT contact technology Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 Datasheet Please read the Important Notice and Warnings at the end of this document V 3.1 www.infineon.com 2017-03-31DF200R12W1H3F B11 Verpolschutz Diode A / Inverse-polarity protection diode A Hchstzulssige Werte / Maximum Rated Values Periodische Spitzensperrspannung T = 25C V 1200 V vj RRM Repetitive peak reverse voltage Durchlassstrom Grenzeffektivwert pro Chip TH = 60C IFRMSM 50 A Maximum RMS forward current per chip Gleichrichter Ausgang Grenzeffektivstrom T = 60C I 60 A H RMSM Maximum RMS current at rectifier output Stostrom Grenzwert t = 10 ms, T = 25C 360 A p vj IFSM Surge forward current tp = 10 ms, Tvj = 150C 290 A Grenzlastintegral tp = 10 ms, Tvj = 25C 650 As It It - value t = 10 ms, T = 150C 420 As p vj Charakteristische Werte / Characteristic Values min. typ. max. Durchlassspannung T = 150C, I = 30 A V 0,95 V vj F F Forward voltage Ersatzwiderstand Tvj = 150C rT 0,10 m Slope resistance Sperrstrom T = 150C, V = 1200 V I 0,10 mA vj R R Reverse current Wrmewiderstand, Chip bis Khlkrper pro Diode / per diode RthJH 1,60 K/W Thermal resistance, junction to heatsink Temperatur im Schaltbetrieb T -40 150 C vj op Temperature under switching conditions Datasheet 2 V 3.1 2017-03-31