DF75R12W1H4F B11 EasyPACK pressfitNTC EasyPACK module and PressFIT / NTC J V = 1200V CES I = 75A / I = 150A C nom CRM Typical Applications Solar applications Electrical Features CoolSiC (TM) Schottky diode gen 5 Low switching losses Mechanical Features 3 kV 1 3 kV AC 1min insulation Al2O3 Al2O 3 substrate with low thermal resistance NTC Integrated NTC temperature sensor Compact design PressFIT PressFIT contact technology Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 Datasheet Please read the Important Notice and Warnings at the end of this document V 3.2 www.infineon.com 2017-03-31DF75R12W1H4F B11 / Bypass-Diode / Maximum Rated Values T = 25C V 1200 V vj RRM Repetitive peak reverse voltage () TH = 100C IFRMSM 50 A Maximum RMS forward current per chip T = 100C I 60 A H RMSM Maximum RMS current at rectifier output t = 10 ms, T = 25C 600 A p vj IFSM Surge forward current tp = 10 ms, Tvj = 150C 480 A I2t- tp = 10 ms, Tvj = 25C 1800 As It It - value t = 10 ms, T = 150C 1150 As p vj / Characteristic Values min. typ. max. T = 150C, I = 50 A V 0,80 V vj F F Forward voltage Tvj = 150C, VR = 1200 V IR 0,10 mA Reverse current / per diode R 0,800 K/W thJH Thermal resistance, junction to heatsink Tvj op -40 150 C Temperature under switching conditions A / Inverse-polarity protection diode A / Maximum Rated Values T = 25C V 1200 V vj RRM Repetitive peak reverse voltage () TH = 100C IFRMSM 50 A Maximum RMS forward current per chip T = 100C I 60 A H RMSM Maximum RMS current at rectifier output t = 10 ms, T = 25C 360 A p vj I FSM Surge forward current tp = 10 ms, Tvj = 150C 290 A I2t- tp = 10 ms, Tvj = 25C 650 As It It - value t = 10 ms, T = 150C 420 As p vj / Characteristic Values min. typ. max. T = 150C, I = 30 A V 0,95 V vj F F Forward voltage Tvj = 150C, VR = 1200 V IR 0,10 mA Reverse current / per diode R 1,60 K/W thJH Thermal resistance, junction to heatsink Tvj op -40 150 C Temperature under switching conditions Datasheet 2 V 3.2 2017-03-31