/ Technical Information IGBT- F3L150R12W2H3 B11 IGBT-Module EasyPACK (NPC2) pressfitNTC EasyPACK module with activeNeutral Point Clamp 2 topology and PressFIT / NTC V = 1200V CES I = 75A / I = 150A C nom CRM Typical Applications 3-Level-Applications Solar Applications Electrical Features IGBT H3 High Speed IGBT H3 Low Switching Losses T = 150C T = 150C vj op vj op Mechanical Features PressFIT PressFIT Contact Technology RoHS RoHS compliant Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: CM date of publication: 2014-11-26 approved by: AKDA revision: 3.0 UL approved (E83335) 1 / Technical Information IGBT- F3L150R12W2H3 B11 IGBT-Module IGBT, T1 / T4 / IGBT, T1 / T4 / Maximum Rated Values T = 25C V 1200 V vj CES Collector-emitter voltage I 150 A CN Implemented collector current T = 100C, T = 175C I 75 A C vj max C nom Continuous DC collector current t = 1 ms I 300 A P CRM Repetitive peak collector current TC = 25C, Tvj max = 175C Ptot 500 W Total power dissipation V +/-20 V GES Gate-emitter peak voltage / Characteristic Values min. typ. max. I = 75 A, V = 15 V T = 25C 1,55 1,75 V C GE vj Collector-emitter saturation voltage I = 75 A, V = 15 V T = 125C V 1,70 V C GE vj CE sat I = 75 A, V = 15 V T = 150C 1,75 V C GE vj IC = 5,20 mA, VCE = VGE, Tvj = 25C VGEth 5,25 5,80 6,35 V Gate threshold voltage V = -15 V ... +15 V Q 1,15 C GE G Gate charge Tvj = 25C RGint 5,0 Internal gate resistor f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 8,70 nF vj CE GE ies Input capacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 0,48 nF Reverse transfer capacitance - V = 1200 V, V = 0 V, T = 25C I 1,0 mA CE GE vj CES Collector-emitter cut-off current - V = 0 V, V = 20 V, T = 25C I 100 nA CE GE vj GES Gate-emitter leakage current () IC = 75 A, VCE = 400 V Tvj = 25C 0,16 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,17 s GE vj RGon = 3,0 Tvj = 150C 0,175 s () IC = 75 A, VCE = 400 V Tvj = 25C 0,03 s t r Rise time, inductive load V = 15 V T = 125C 0,035 s GE vj RGon = 3,0 Tvj = 150C 0,035 s () IC = 75 A, VCE = 400 V Tvj = 25C 0,33 s t d off Turn-off delay time, inductive load V = 15 V T = 125C 0,42 s GE vj RGoff = 3,0 Tvj = 150C 0,44 s () IC = 75 A, VCE = 400 V Tvj = 25C 0,035 s t f Fall time, inductive load V = 15 V T = 125C 0,06 s GE vj RGoff = 3,0 Tvj = 150C 0,07 s () IC = 75 A, VCE = 400 V, LS = 25 nH Tvj = 25C 1,55 mJ Turn-on energy loss per pulse V = 15 V, di/dt = 2600 A/s (T = 150C) T = 125C E 2,45 mJ GE vj vj on RGon = 3,0 Tvj = 150C 2,70 mJ ( IC = 75 A, VCE = 400 V, LS = 25 nH Tvj = 25C 2,60 mJ Turn-off energy loss per pulse V = 15 V, du/dt = 2400 V/s (T = 150C)T = 125C E 4,40 mJ GE vj vj off RGoff = 3,0 Tvj = 150C 5,00 mJ VGE 15 V, VCC = 800 V I SC SC data V = V -L di/dt t 10 s, T = 150C 600 A CEmax CES sCE P vj IGBT / per IGBT R 0,25 0,30 K/W thJC Thermal resistance, junction to case prepared by: CM date of publication: 2014-11-26 approved by: AKDA revision: 3.0 2