/ Technical Information IGBT- F3L15R12W2H3 B27 IGBT-modules / Preliminary Data J V = 1200V CES IC nom = 15A / ICRM = 30A Typical Applications 3-Level-Applications Solar Applications Electrical Features Low inductive design Low Switching Losses VCEsat Low VCEsat Mechanical Features Al O Al O Substrate with Low Thermal Resistance 2 3 2 3 Compact design PressFIT PressFIT Contact Technology Rugged mounting due to integrated mounting clamps Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: CM date of publication: 2013-11-25 approved by: MB revision: 2.0 UL approved (E83335) 1 / Technical Information IGBT- F3L15R12W2H3 B27 IGBT-modules Preliminary Data IGBT, / IGBT,Inverter / Maximum Rated Values T = 25C V 1200 V vj CES Collector-emitter voltage T = 100C, T = 175C I 15 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 175C IC 20 A t = 1 ms I 30 A P CRM Repetitive peak collector current T = 25C, T = 175C P 145 W C vj max tot Total power dissipation VGES +/-20 V Gate-emitter peak voltage / Characteristic Values min. typ. max. I = 15 A, V = 15 V T = 25C 2,05 2,40 V C GE vj Collector-emitter saturation voltage I = 15 A, V = 15 V T = 125C V 2,50 V C GE vj CE sat I = 15 A, V = 15 V T = 150C 2,60 V C GE vj I = 0,50 mA, V = V , T = 25C V 5,0 5,8 6,5 V C CE GE vj GEth Gate threshold voltage VGE = -15 V ... +15 V QG 0,075 C Gate charge T = 25C R 0,0 vj Gint Internal gate resistor f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 0,875 nF Input capacitance f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 0,045 nF vj CE GE res Reverse transfer capacitance - VCE = 1200 V, VGE = 0 V, Tvj = 25C ICES 1,0 mA Collector-emitter cut-off current - V = 0 V, V = 20 V, T = 25C I 100 nA CE GE vj GES Gate-emitter leakage current () I = 15 A, V = 350 V T = 25C 0,04 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,04 s R = 35 T = 150C 0,04 s Gon vj () I = 15 A, V = 350 V T = 25C 0,025 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,026 s R = 35 T = 150C 0,027 s Gon vj () I = 15 A, V = 350 V T = 25C 0,27 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 0,31 s R = 35 T = 150C 0,32 s Goff vj () I = 15 A, V = 350 V T = 25C 0,02 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,03 s R = 35 T = 150C 0,035 s Goff vj () I = 15 A, V = 350 V, L = 30 nH T = 25C 0,40 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 700 A/s (Tvj = 150C) Tvj = 125C Eon 0,60 mJ R = 35 T = 150C 0,64 mJ Gon vj ( I = 15 A, V = 350 V, L = 30 nH T = 25C 0,37 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 2800 V/s (Tvj = 150C) Tvj = 125C Eoff 0,53 mJ R = 35 T = 150C 0,54 mJ Goff vj V 15 V, V = 800 V GE CC ISC SC data VCEmax = VCES -LsCE di/dt tP 10 s, Tvj = 150C 48 A IGBT / per IGBT R 0,95 1,05 K/W thJC Thermal resistance, junction to case IGBT / per IGBT R 0,80 K/W thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) T -40 150 C vj op Temperature under switching conditions prepared by: CM date of publication: 2013-11-25 approved by: MB revision: 2.0 2