Technische Information / Technical Information IGBT-Module F3L300R07PE4 IGBT-modules EconoPACK4 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und NTC EconoPACK4 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC Vorlufige Daten / Preliminary Data J VCES = 650V I = 300A / I = 600A C nom CRM Typische Anwendungen Typical Applications 3-Level-Applikationen 3-Level-Applications Elektrische Eigenschaften Electrical Features Erhhte Sperrspannungsfestigkeit auf 650V Increased blocking voltage capability to 650V Erweiterte Sperrschichttemperatur T Extended Operation Temperature T vj op vj op Trench IGBT 4 Trench IGBT 4 Tvj op = 150C Tvj op = 150C V mit positivem Temperaturkoeffizienten V with positive Temperature Coefficient CEsat CEsat Mechanische Eigenschaften Mechanical Features 4 kV AC 1min Isolationsfestigkeit 4 kV AC 1min Insulation Hohe mechanische Robustheit High mechanical robustness Integrierter NTC Temperatur Sensor Integrated NTC temperature sensor Isolierte Bodenplatte Isolated Base Plate Standardgehuse Standard Housing Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: AS date of publication: 2013-11-05 approved by: MK revision: 2.1 UL approved (E83335) 1Technische Information / Technical Information IGBT-Module F3L300R07PE4 IGBT-modules Vorlufige Daten Preliminary Data IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 650 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 70C, T = 175C I 300 A C vj max C nom Continuous DC collector current Periodischer Kollektor-Spitzenstrom t = 1 ms I 600 A P CRM Repetitive peak collector current Gesamt-Verlustleistung T = 25C, T = 175C P 940 W C vj max tot Total power dissipation Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 300 A, V = 15 V T = 25C 1,55 1,95 V C GE vj Collector-emitter saturation voltage I = 300 A, V = 15 V T = 125C V 1,70 V C GE vj CE sat I = 300 A, V = 15 V T = 150C 1,75 V C GE vj Gate-Schwellenspannung I = 4,80 mA, V = V , T = 25C V 5,0 5,8 6,5 V C CE GE vj GEth Gate threshold voltage Gateladung VGE = -15 V ... +15 V QG 3,00 C Gate charge Interner Gatewiderstand T = 25C R 1,0 vj Gint Internal gate resistor Eingangskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 18,5 nF Input capacitance Rckwirkungskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 0,57 nF vj CE GE res Reverse transfer capacitance Kollektor-Emitter-Reststrom VCE = 650 V, VGE = 0 V, Tvj = 25C ICES 1,0 mA Collector-emitter cut-off current Gate-Emitter-Reststrom V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last I = 300 A, V = 300 V T = 25C 0,11 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,12 s R = 2,0 T = 150C 0,13 s Gon vj Anstiegszeit, induktive Last I = 300 A, V = 300 V T = 25C 0,05 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,06 s R = 2,0 T = 150C 0,06 s Gon vj Abschaltverzgerungszeit, induktive Last I = 300 A, V = 300 V T = 25C 0,49 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 0,52 s R = 2,0 T = 150C 0,53 s Goff vj Fallzeit, induktive Last I = 300 A, V = 300 V T = 25C 0,05 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,07 s R = 2,0 T = 150C 0,07 s Goff vj Einschaltverlustenergie pro Puls I = 300 A, V = 300 V, L = 30 nH T = 25C 1,50 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 3400 A/s (Tvj = 150C) Tvj = 125C Eon 2,00 mJ R = 2,0 T = 150C 2,50 mJ Gon vj Abschaltverlustenergie pro Puls I = 300 A, V = 300 V, L = 30 nH T = 25C 14,0 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 3300 V/s (Tvj = 150C)Tvj = 125C Eoff 17,5 mJ R = 2,0 T = 150C 18,5 mJ Goff vj Kurzschluverhalten V 15 V, V = 360 V t 10 s, T = 25C 1500 A GE CC P vj ISC SC data VCEmax = VCES -LsCE di/dt tP 10 s, Tvj = 150C 1200 A Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT R 0,16 K/W thJC Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro IGBT / per IGBT R 0,063 K/W thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) Temperatur im Schaltbetrieb T -40 150 C vj op Temperature under switching conditions prepared by: AS date of publication: 2013-11-05 approved by: MK revision: 2.1 2