Technische Information / Technical Information IGBT-Modul F3L300R12ME4 B23 IGBT-Module EconoDUAL3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und NTC EconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and NTC J V = 1200V CES I = 300A / I = 600A C nom CRM Typische Anwendungen Typical Applications 3-Level-Applikationen 3-Level-Applications Elektrische Eigenschaften Electrical Features Erweiterte Sperrschichttemperatur T Extended Operation Temperature T vj op vj op Niedrige Schaltverluste Low Switching Losses Niedriges VCEsat Low VCEsat Sehr groe Robustheit Unbeatable Robustness T = 150C T = 150C vj op vj op V CEsat mit positivem Temperaturkoeffizienten VCEsat with positive Temperature Coefficient Mechanische Eigenschaften Mechanical Features Isolierte Bodenplatte Isolated Base Plate Standardgehuse Standard Housing Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: CU date of publication: 2015-04-27 approved by: MK revision: V3.1 UL approved (E83335) 1Technische Information / Technical Information IGBT-Modul F3L300R12ME4 B23 IGBT-Module IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 1200 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 100C, T = 175C I 300 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 175C IC 450 A Periodischer Kollektor-Spitzenstrom t = 1 ms I 600 A P CRM Repetitive peak collector current Gesamt-Verlustleistung T = 25C, T = 175C P 1550 W C vj max tot Total power dissipation Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 300 A, V = 15 V T = 25C 1,75 2,10 V C GE vj Collector-emitter saturation voltage I = 300 A, V = 15 V T = 125C V 2,00 V C GE vj CE sat I = 300 A, V = 15 V T = 150C 2,05 V C GE vj Gate-Schwellenspannung I = 11,5 mA, V = V , T = 25C V 5,20 5,80 6,40 V C CE GE vj GEth Gate threshold voltage Gateladung VGE = -15 V ... +15 V QG 2,25 C Gate charge Interner Gatewiderstand T = 25C R 2,5 vj Gint Internal gate resistor Eingangskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 19,0 nF Input capacitance Rckwirkungskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 1,05 nF vj CE GE res Reverse transfer capacitance Kollektor-Emitter-Reststrom VCE = 1200 V, VGE = 0 V, Tvj = 25C ICES 1,0 mA Collector-emitter cut-off current Gate-Emitter-Reststrom V = 0 V, V = 20 V, T = 25C I 100 nA CE GE vj GES Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last I = 300 A, V = 600 V T = 25C 0,20 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,22 s R = 0,82 T = 150C 0,23 s Gon vj Anstiegszeit, induktive Last I = 300 A, V = 600 V T = 25C 0,05 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,06 s R = 0,82 T = 150C 0,06 s Gon vj Abschaltverzgerungszeit, induktive Last I = 300 A, V = 600 V T = 25C 0,40 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 0,50 s R = 0,82 T = 150C 0,53 s Goff vj Fallzeit, induktive Last I = 300 A, V = 600 V T = 25C 0,06 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,10 s R = 0,82 T = 150C 0,11 s Goff vj Einschaltverlustenergie pro Puls I = 300 A, V = 600 V, L = 35 nH T = 25C 23,0 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 4150 A/s (Tvj = 150C) Tvj = 125C Eon 34,0 mJ R = 0,82 T = 150C 37,0 mJ Gon vj Abschaltverlustenergie pro Puls I = 300 A, V = 600 V, L = 35 nH T = 25C 23,0 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 2900 V/s (Tvj = 150C)Tvj = 125C Eoff 36,0 mJ R = 0,82 T = 150C 40,0 mJ Goff vj Kurzschluverhalten V 15 V, V = 800 V t 10 s, T = 25C 1900 A GE CC P vj ISC SC data VCEmax = VCES -LsCE di/dt tP 10 s, Tvj = 150C 1400 A Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT R 0,0970 K/W thJC Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro IGBT / per IGBT R 0,0300 K/W thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) Temperatur im Schaltbetrieb T -40 150 C vj op Temperature under switching conditions prepared by: CU date of publication: 2015-04-27 approved by: MK revision: V3.1 2