F3L400R10W3S7F B11 EasyPACK Modul mit TRENCHSTOP IGBT7 und CoolSiC Schottky Diode und PressFIT / NTC EasyPACK module with TRENCHSTOP IGBT7 and CoolSiC Schottky diode and PressFIT / NTC VCES = 950V I = 400A / I = 800A C nom CRM Potentielle Anwendungen Potential Applications 3-Level-Applikationen 3-level-applications Solar Anwendungen Solar applications Elektrische Eigenschaften Electrical Features TM TM CoolSiC Schottky Diode Gen 5 CoolSiC Schottky diode gen 5 Niederinduktives Design Low inductive design Niedrige Schaltverluste Low switching losses TM TM Trenchstop IGBT7 Trenchstop IGBT7 Mechanische Eigenschaften Mechanical Features Gehuse mit CTI > 400 Package with CTI > 400 Integrierter NTC Temperatur Sensor Integrated NTC temperature sensor PressFIT Verbindungstechnik PressFIT contact technology Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 Datasheet Please read the Important Notice and Warnings at the end of this document V 3.0 www.infineon.com 2020-04-02F3L400R10W3S7F B11 IGBT, T1 / T4 / IGBT, T1 / T4 Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 950 V vj CES Collector-emitter voltage Implementierter Kollektor-Strom ICN 400 A Implemented collector current Kollektor-Dauergleichstrom T = 65C, T = 175C I 220 A H vj max CDC Continuous DC collector current Periodischer Kollektor-Spitzenstrom tP = 1 ms ICRM 800 A Repetitive peak collector current Gate-Emitter-Spitzenspannung V +/-20 V GES Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 150 A T = 25C 1,40 1,60 V C vj Collector-emitter saturation voltage VGE = 15 V Tvj = 125C VCE sat 1,48 V T = 150C 1,50 V vj Gate-Schwellenspannung I = 6,50 mA, V = V , T = 25C V 4,35 5,10 5,85 V C CE GE vj GEth Gate threshold voltage Gateladung VGE = -15 / 15 V, VCE = 600 V QG 0,90 C Gate charge Interner Gatewiderstand T = 25C R 0,75 vj Gint Internal gate resistor Eingangskapazitt f = 100 kHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 25,2 nF Input capacitance Rckwirkungskapazitt f = 100 kHz, T = 25C, V = 25 V, V = 0 V C 0,078 nF vj CE GE res Reverse transfer capacitance Kollektor-Emitter-Reststrom VCE = 950 V, VGE = 0 V Tvj = 25C ICES 0,071 mA Collector-emitter cut-off current Gate-Emitter-Reststrom V = 0 V, V = 20 V, T = 25C I 100 nA CE GE vj GES Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last I = 150 A, V = 500 V T = 25C 0,094 s C CE vj td on Turn-on delay time, inductive load VGE = -15 / 15 V Tvj = 125C 0,094 s R = 5,0 T = 150C 0,094 s Gon vj Anstiegszeit, induktive Last I = 150 A, V = 500 V T = 25C 0,033 s C CE vj tr Rise time, inductive load V = -15 / 15 V T = 125C 0,033 s GE vj R = 5,0 T = 150C 0,033 s Gon vj Abschaltverzgerungszeit, induktive Last I = 150 A, V = 500 V T = 25C 0,74 s C CE vj td off Turn-off delay time, inductive load V = -15 / 15 V T = 125C 0,81 s GE vj R = 20 T = 150C 0,82 s Goff vj Fallzeit, induktive Last I = 150 A, V = 500 V T = 25C 0,033 s C CE vj tf Fall time, inductive load V = -15 / 15 V T = 125C 0,057 s GE vj R = 20 T = 150C 0,07 s Goff vj Einschaltverlustenergie pro Puls I = 150 A, V = 500 V, L = 35 nH T = 25C 4,30 mJ C CE vj Turn-on energy loss per pulse di/dt = 4200 A/s (T = 150C) T = 125C E 4,30 mJ vj vj on V = -15 / 15 V, R = 5,0 T = 150C 4,30 mJ GE Gon vj Abschaltverlustenergie pro Puls I = 150 A, V = 500 V, L = 35 nH T = 25C 5,00 mJ C CE vj Turn-off energy loss per pulse du/dt = 4600 V/s (T = 150C) T = 125C E 6,60 mJ vj vj off V = -15 / 15 V, R = 20 T = 150C 7,30 mJ GE Goff vj Kurzschluverhalten V 15 V, V = 600 V GE CC ISC SC data V = V -L di/dt t 0 s, T = 150C 1200 A CEmax CES sCE P vj Wrmewiderstand, Chip bis Khlkrper pro IGBT / per IGBT R 0,240 K/W thJH Thermal resistance, junction to heatsink Temperatur im Schaltbetrieb Tvj op -40 150 C Temperature under switching conditions Datasheet 2 V 3.0 2020-04-02