Technische Information / Technical Information IGBT-Module F3L400R12PT4 B26 IGBT-modules EconoPACK4 Modul mit aktiverNeutral Point Clamp 2 Topologie und PressFIT / NTC EconoPACK4 module with activeNeutral Point Clamp 2 topology and PressFIT / NTC Vorlufige Daten / Preliminary Data VCES = 1200V I = 400A / I = 800A C nom CRM Typische Anwendungen Typical Applications Solar Anwendungen Solar Applications USV-Systeme UPS Systems Elektrische Eigenschaften Electrical Features Erweiterte Sperrschichttemperatur T Extended Operation Temperature T vj op vj op Niedrige Schaltverluste Low Switching Losses Niedriges VCEsat Low VCEsat Trench IGBT 4 Trench IGBT 4 T = 150C T = 150C vj op vj op V mit positivem Temperaturkoeffizienten V with positive Temperature Coefficient CEsat CEsat Mechanische Eigenschaften Mechanical Features Isolierte Bodenplatte Isolated Base Plate Kompaktes Design Compact design PressFIT Verbindungstechnik PressFIT Contact Technology Standardgehuse Standard Housing Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: MK date of publication: 2013-11-11 approved by: MK revision: 2.0 UL approved (E83335) 1Technische Information / Technical Information IGBT-Module F3L400R12PT4 B26 IGBT-modules Vorlufige Daten Preliminary Data IGBT, T1 / T4 / IGBT, T1 / T4 Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 1200 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 100C, T = 175C I 400 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 175C IC 600 A Periodischer Kollektor-Spitzenstrom t = 1 ms I 800 A P CRM Repetitive peak collector current Gesamt-Verlustleistung T = 25C, T = 175C P 2150 W C vj max tot Total power dissipation Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 400 A, V = 15 V T = 25C 1,75 2,15 V C GE vj Collector-emitter saturation voltage I = 400 A, V = 15 V T = 125C V 2,05 V C GE vj CE sat I = 400 A, V = 15 V T = 150C 2,10 V C GE vj Gate-Schwellenspannung I = 15,0 mA, V = V , T = 25C V 5,2 5,8 6,4 V C CE GE vj GEth Gate threshold voltage Gateladung VGE = -15 V ... +15 V QG 3,30 C Gate charge Interner Gatewiderstand T = 25C R 1,8 vj Gint Internal gate resistor Eingangskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 25,0 nF Input capacitance Rckwirkungskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 1,35 nF vj CE GE res Reverse transfer capacitance Kollektor-Emitter-Reststrom VCE = 1200 V, VGE = 0 V, Tvj = 25C ICES 1,0 mA Collector-emitter cut-off current Gate-Emitter-Reststrom V = 0 V, V = 20 V, T = 25C I 100 nA CE GE vj GES Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last I = 400 A, V = 300 V T = 25C 0,20 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,22 s R = 1,5 T = 150C 0,23 s Gon vj Anstiegszeit, induktive Last I = 400 A, V = 300 V T = 25C 0,11 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,12 s R = 1,5 T = 150C 0,12 s Gon vj Abschaltverzgerungszeit, induktive Last I = 400 A, V = 300 V T = 25C 0,40 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 0,48 s R = 1,5 T = 150C 0,50 s Goff vj Fallzeit, induktive Last I = 400 A, V = 300 V T = 25C 0,07 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,10 s R = 1,5 T = 150C 0,11 s Goff vj Einschaltverlustenergie pro Puls I = 400 A, V = 300 V, L = 35 nH T = 25C 8,75 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 2650 A/s (Tvj = 150C) Tvj = 125C Eon 13,0 mJ R = 1,5 T = 150C 13,5 mJ Gon vj Abschaltverlustenergie pro Puls I = 400 A, V = 300 V, L = 35 nH T = 25C 18,0 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 2300 V/s (Tvj = 150C)Tvj = 125C Eoff 26,0 mJ R = 1,5 T = 150C 28,5 mJ Goff vj Kurzschluverhalten V 15 V, V = 800 V t 10 s, T = 25C 2200 A GE CC P vj ISC SC data VCEmax = VCES -LsCE di/dt tP 10 s, Tvj = 150C 1900 A Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT R 0,07 K/W thJC Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro IGBT / per IGBT R 0,046 K/W thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) Temperatur im Schaltbetrieb T -40 150 C vj op Temperature under switching conditions prepared by: MK date of publication: 2013-11-11 approved by: MK revision: 2.0 2