X-On Electronics has gained recognition as a prominent supplier of F3L75R07W2E3B11BOMA1 IGBT Modules across the USA, India, Europe, Australia, and various other global locations. F3L75R07W2E3B11BOMA1 IGBT Modules are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Modules, ensuring timely deliveries around the world.

F3L75R07W2E3B11BOMA1 Infineon

F3L75R07W2E3B11BOMA1 electronic component of Infineon
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Part No.F3L75R07W2E3B11BOMA1
Manufacturer: Infineon
Category: IGBT Modules
Description: IGBT, MODULE, N-CH, 650V, 75A
Datasheet: F3L75R07W2E3B11BOMA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 84.5393 ea
Line Total: USD 84.54 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 15
Multiples : 1
15 : USD 64.6427
25 : USD 62.9246
50 : USD 61.5104

0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 1
Multiples : 1
1 : USD 84.5393
5 : USD 76.4706
10 : USD 68.7817
50 : USD 64.034

0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 10
Multiples : 1
10 : USD 33.5046

0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 1
Multiples : 1
1 : USD 78.5284

0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 1
Multiples : 1
1 : USD 58.5881

   
Manufacturer
Product Category
Brand
Transistor Polarity
Dc Collector Current
Collector Emitter Saturation Voltage Vceon
Power Dissipation Pd
Collector Emitter Voltage Vbrceo
Transistor Case Style
Operating Temperature Max
Svhc
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the F3L75R07W2E3B11BOMA1 from our IGBT Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the F3L75R07W2E3B11BOMA1 and other electronic components in the IGBT Modules category and beyond.

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Technische Information / Technical Information IGBT-Module F3L75R07W2E3 B11 IGBT-modules EasyPACK Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und PressFIT / NTC EasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and PressFIT / NTC Vorlufige Daten / Preliminary Data J VCES = 650V I = 75A / I = 150A C nom CRM Typische Anwendungen Typical Applications 3-Level-Applikationen 3-Level-Applications Solar Anwendungen Solar Applications USV-Systeme UPS Systems Elektrische Eigenschaften Electrical Features Erhhte Sperrspannungsfestigkeit auf 650V Increased blocking voltage capability to 650V Niederinduktives Design Low inductive design Niedrige Schaltverluste Low Switching Losses Niedriges V Low V CEsat CEsat Mechanische Eigenschaften Mechanical Features Al O Substrat mit kleinem thermischen Al O Substrate with Low Thermal Resistance 2 3 2 3 Widerstand Kompaktes Design Compact design PressFIT Verbindungstechnik PressFIT Contact Technology Robuste Montage durch integrierte Rugged mounting due to integrated mounting Befestigungsklammern clamps Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: DK date of publication: 2013-11-05 approved by: MB revision: 2.1 UL approved (E83335) 1Technische Information / Technical Information IGBT-Module F3L75R07W2E3 B11 IGBT-modules Vorlufige Daten Preliminary Data IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 650 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 75C, T = 175C I 75 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 175C IC 95 A Periodischer Kollektor-Spitzenstrom t = 1 ms I 150 A P CRM Repetitive peak collector current Gesamt-Verlustleistung T = 25C, T = 175C P 250 W C vj max tot Total power dissipation Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 75 A, V = 15 V T = 25C 1,45 1,90 V C GE vj Collector-emitter saturation voltage I = 75 A, V = 15 V T = 125C V 1,60 V C GE vj CE sat I = 75 A, V = 15 V T = 150C 1,70 V C GE vj Gate-Schwellenspannung I = 1,20 mA, V = V , T = 25C V 4,9 5,8 6,5 V C CE GE vj GEth Gate threshold voltage Gateladung VGE = -15 V ... +15 V QG 0,80 C Gate charge Interner Gatewiderstand T = 25C R 0,0 vj Gint Internal gate resistor Eingangskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 4,60 nF Input capacitance Rckwirkungskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 0,145 nF vj CE GE res Reverse transfer capacitance Kollektor-Emitter-Reststrom VCE = 650 V, VGE = 0 V, Tvj = 25C ICES 1,0 mA Collector-emitter cut-off current Gate-Emitter-Reststrom V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last I = 75 A, V = 300 V T = 25C 0,025 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,025 s R = 5,1 T = 150C 0,025 s Gon vj Anstiegszeit, induktive Last I = 75 A, V = 300 V T = 25C 0,02 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,023 s R = 5,1 T = 150C 0,024 s Gon vj Abschaltverzgerungszeit, induktive Last I = 75 A, V = 300 V T = 25C 0,20 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 0,225 s R = 5,1 T = 150C 0,23 s Goff vj Fallzeit, induktive Last I = 75 A, V = 300 V T = 25C 0,085 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,12 s R = 5,1 T = 150C 0,14 s Goff vj Einschaltverlustenergie pro Puls I = 75 A, V = 300 V, L = 35 nH T = 25C 0,45 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 3100 A/s (Tvj = 150C) Tvj = 125C Eon 0,60 mJ R = 5,1 T = 150C 0,70 mJ Gon vj Abschaltverlustenergie pro Puls I = 75 A, V = 300 V, L = 35 nH T = 25C 1,70 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 4000 V/s (Tvj = 150C)Tvj = 125C Eoff 2,30 mJ R = 5,1 T = 150C 2,40 mJ Goff vj Kurzschluverhalten V 15 V, V = 360 V t 8 s, T = 25C 530 A GE CC P vj ISC SC data VCEmax = VCES -LsCE di/dt tP 6 s, Tvj = 150C 380 A Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT R 0,55 0,60 K/W thJC Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro IGBT / per IGBT R 0,55 K/W thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) Temperatur im Schaltbetrieb T -40 150 C vj op Temperature under switching conditions prepared by: DK date of publication: 2013-11-05 approved by: MB revision: 2.1 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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