/ Technical Information IGBT- F4-100R12KS4 IGBT-modules IGBT, / IGBT,Inverter Preliminary Data / Maximum Rated Values T = 25C V 1200 V vj CES Collector-emitter voltage T = 65C, T = 150C I 100 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 150C IC 130 A t = 1 ms I 200 A P CRM Repetitive peak collector current T = 25C, T = 150 P 660 W C vj max tot Total power dissipation VGES +/-20 V Gate-emitter peak voltage / Characteristic Values min. typ. max. I = 100 A, V = 15 V T = 25C 3,20 3,75 V C GE vj V CE sat Collector-emitter saturation voltage I = 100 A, V = 15 V T = 125C 3,85 V C GE vj IC = 4,00 mA, VCE = VGE, Tvj = 25C VGEth 4,5 5,5 6,5 V Gate threshold voltage V = -15 V ... +15 V Q 1,10 C GE G Gate charge Tvj = 25C RGint 5,0 Internal gate resistor f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 6,80 nF vj CE GE ies Input capacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 0,42 nF Reverse transfer capacitance - V = 1200 V, V = 0 V, T = 25C I 5,0 mA CE GE vj CES Collector-emitter cut-off current - V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current () IC = 100 A, VCE = 600 V Tvj = 25C 0,12 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,13 s GE vj RGon = 5,6 () IC = 100 A, VCE = 600 V Tvj = 25C 0,05 s t r Rise time, inductive load V = 15 V T = 125C 0,06 s GE vj RGon = 5,6 () IC = 100 A, VCE = 600 V Tvj = 25C 0,31 s t d off Turn-off delay time, inductive load V = 15 V T = 125C 0,36 s GE vj RGoff = 5,6 () IC = 100 A, VCE = 600 V Tvj = 25C 0,02 s t f Fall time, inductive load V = 15 V T = 125C 0,03 s GE vj RGoff = 5,6 () IC = 100 A, VCE = 600 V, LS = 30 nH Tvj = 25C mJ Turn-on energy loss per pulse V = 15 V T = 125C E 12,0 mJ GE vj on RGon = 5,6 ( IC = 100 A, VCE = 600 V, LS = 30 nH Tvj = 25C mJ Turn-off energy loss per pulse V = 15 V T = 125C E 5,00 mJ GE vj off RGoff = 5,6 VGE 15 V, VCC = 900 V I SC SC data V = V -L di/dt t 10 s, T = 125C 600 A CEmax CES sCE P vj IGBT / per IGBT R 0,19 K/W thJC Thermal resistance, junction to case T -40 125 C vj op Temperature under switching conditions prepared by: MK date of publication: 2013-10-03 approved by: RS revision: 2.1 1 / Technical Information IGBT- F4-100R12KS4 IGBT-modules Preliminary Data , / Diode, Inverter / Maximum Rated Values T = 25C V 1200 V vj RRM Repetitive peak reverse voltage I 100 A F Continuous DC forward current t = 1 ms I 200 A P FRM Repetitive peak forward current I2t- V = 0 V, t = 10 ms, T = 125C It 4300 As R P vj It - value / Characteristic Values min. typ. max. I = 100 A, V = 0 V T = 25C 2,00 2,55 V F GE vj VF Forward voltage I = 100 A, V = 0 V T = 125C 1,70 V F GE vj I = 100 A, - di /dt = 2300 A/s (T =125C) T = 25C 56,0 A F F vj vj Peak reverse recovery current V = 600 V T = 125C I 82,0 A R vj RM V = -15 V GE I = 100 A, - di /dt = 2300 A/s (T =125C) T = 25C 6,00 C F F vj vj Recovered charge V = 600 V T = 125C Q 17,0 C R vj r V = -15 V GE I = 100 A, - di /dt = 2300 A/s (T =125C) T = 25C 2,00 mJ F F vj vj Reverse recovery energy V = 600 V T = 125C E 5,50 mJ R vj rec V = -15 V GE / per diode R 0,32 K/W thJC Thermal resistance, junction to case Tvj op -40 125 C Temperature under switching conditions / NTC-Thermistor / Characteristic Values min. typ. max. T = 25C R 5,00 k C 25 Rated resistance R100 T = 100C, R = 493 R/R -5 5 % C 100 Deviation of R100 T = 25C P 20,0 mW C 25 Power dissipation B- R = R exp B (1/T - 1/(298,15 K)) B 3375 K 2 25 25/50 2 25/50 B-value B- R = R exp B (1/T - 1/(298,15 K)) B t.b.d. K 2 25 25/80 2 25/80 B-value B- R = R exp B (1/T - 1/(298,15 K)) B t.b.d. K 2 25 25/100 2 25/100 B-value Specification according to the valid application note. prepared by: MK date of publication: 2013-10-03 approved by: RS revision: 2.1 2