F4-150R17ME4 B11 EconoDUAL3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 3 Diode EconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled 3 diode V = 1700V CES I = 150A / I = 300A C nom CRM Potentielle Anwendungen Potential Applications Hochleistungsumrichter High power converters Mittelspannungsantriebe Medium voltage converters Windgeneratoren Wind turbines Elektrische Eigenschaften Electrical Features Groe DC-Festigkeit High DC stability Hohe Kurzschlussrobustheit High short-circuit capability Niedriges V Low V CEsat CEsat Tvj op = 150C Tvj op = 150C Trench IGBT 4 Trench IGBT 4 V mit positivem Temperaturkoeffizienten V with positive temperature coefficient CEsat CEsat Mechanische Eigenschaften Mechanical Features Al O Substrat mit kleinem thermischen Al O substrate with low thermal resistance 2 3 2 3 Widerstand Hohe Leistungsdichte High power density Isolierte Bodenplatte Isolated base plate PressFIT Verbindungstechnik PressFIT contact technology Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 Datasheet Please read the Important Notice and Warnings at the end of this document V 3.2 www.infineon.com 2017-09-18F4-150R17ME4 B11 IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 1700 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 100C, T = 175C I 150 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 175C IC 230 A Periodischer Kollektor-Spitzenstrom t = 1 ms I 300 A P CRM Repetitive peak collector current Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung IC = 150 A, VGE = 15 V Tvj = 25C 1,95 2,30 V Collector-emitter saturation voltage I = 150 A, V = 15 V T = 125C V 2,35 V C GE vj CE sat IC = 150 A, VGE = 15 V Tvj = 150C 2,45 V Gate-Schwellenspannung IC = 6,00 mA, VCE = VGE, Tvj = 25C VGEth 5,20 5,80 6,40 V Gate threshold voltage Gateladung V = -15 V ... +15 V Q 1,55 C GE G Gate charge Interner Gatewiderstand Tvj = 25C RGint 5,0 Internal gate resistor Eingangskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 12,0 nF vj CE GE ies Input capacitance Rckwirkungskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 0,39 nF Reverse transfer capacitance Kollektor-Emitter-Reststrom V = 1700 V, V = 0 V, T = 25C I 3,0 mA CE GE vj CES Collector-emitter cut-off current Gate-Emitter-Reststrom VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 400 nA Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last IC = 150 A, VCE = 900 V Tvj = 25C 0,19 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,21 s GE vj R = 0,51 T = 150C 0,22 s Gon vj Anstiegszeit, induktive Last IC = 150 A, VCE = 900 V Tvj = 25C 0,04 s t r Rise time, inductive load V = 15 V T = 125C 0,05 s GE vj R = 0,51 T = 150C 0,05 s Gon vj Abschaltverzgerungszeit, induktive Last I = 150 A, V = 900 V T = 25C 0,41 s C CE vj t d off Turn-off delay time, inductive load V = 15 V T = 125C 0,57 s GE vj R = 0,51 T = 150C 0,61 s Goff vj Fallzeit, induktive Last I = 150 A, V = 900 V T = 25C 0,09 s C CE vj t f Fall time, inductive load V = 15 V T = 125C 0,16 s GE vj R = 0,51 T = 150C 0,17 s Goff vj Einschaltverlustenergie pro Puls I = 150 A, V = 900 V, L = 35 nH T = 25C 39,5 mJ C CE S vj Turn-on energy loss per pulse V = 15 V, di/dt = 2900 A/s (T = 150C) T = 125C E 52,5 mJ GE vj vj on R = 0,51 T = 150C 56,5 mJ Gon vj Abschaltverlustenergie pro Puls I = 150 A, V = 900 V, L = 35 nH T = 25C 29,0 mJ C CE S vj Turn-off energy loss per pulse V = 15 V, du/dt = 3000 V/s (T = 150C)T = 125C E 45,5 mJ GE vj vj off R = 0,51 T = 150C 53,0 mJ Goff vj Kurzschluverhalten V 15 V, V = 1000 V GE CC I SC SC data V = V -L di/dt t 10 s, T = 150C 630 A CEmax CES sCE P vj Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT RthJC 0,158 K/W Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro IGBT / per IGBT R 0,0930 K/W thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease Temperatur im Schaltbetrieb Tvj op -40 150 C Temperature under switching conditions Datasheet 2 V 3.2 2017-09-18