/ Technical Information IGBT- F4-75R07W1H3 B11A IGBT-modules EasyPACK pressfitNTC EasyPACK module and PressFIT / NTC J V = 650V CES I = 37,5A / I = 75A C nom CRM Typical Applications Automotive Applications High Frequency Switching Application zh DC/DC converter Auxiliary Inverters Hybrid Electrical Vehicles (H)EV Inductive Heating and Welding Electrical Features 650V Increased blocking voltage capability to 650V IGBT H3 High Speed IGBT H3 Low inductive design Low Switching Losses Mechanical Features 2.5 kV 1 2.5 kV AC 1min Insulation High Creepage and Clearance Distances NTC Integrated NTC temperature sensor PressFIT PressFIT Contact Technology RoHS RoHS compliant Rugged mounting due to integrated mounting clamps Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: AS date of publication: 2014-03-05 approved by: TR revision: 3.0 UL approved (E83335) 1 / Technical Information IGBT- F4-75R07W1H3 B11A IGBT-modules IGBT, / IGBT,Inverter / Maximum Rated Values T = 25C V 650 V vj CES Collector-emitter voltage I 75 A CN Implemented collector current T = 105C, T = 175C I 37,5 A C vj max C nom Continuous DC collector current t = 1 ms I 150 A P CRM Repetitive peak collector current TC = 25C, Tvj max = 175C Ptot 275 W Total power dissipation V +/-20 V GES Gate-emitter peak voltage / Characteristic Values min. typ. max. I = 37,5 A, V = 15 V T = 25C 1,50 1,85 V C GE vj Collector-emitter saturation voltage I = 37,5 A, V = 15 V T = 125C V 1,55 V C GE vj CE sat I = 37,5 A, V = 15 V T = 150C 1,60 V C GE vj IC = 1,20 mA, VCE = VGE, Tvj = 25C VGEth 4,9 5,8 6,5 V Gate threshold voltage V = -15 V ... +15 V Q 0,80 C GE G Gate charge Tvj = 25C RGint 0,0 Internal gate resistor f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 4,70 nF vj CE GE ies Input capacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 0,14 nF Reverse transfer capacitance - V = 650 V, V = 0 V, T = 25C I 0,05 mA CE GE vj CES Collector-emitter cut-off current - V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current () IC = 37,5 A, VCE = 300 V Tvj = 25C 0,019 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,019 s GE vj RGon = 4,3 Tvj = 150C 0,02 s () IC = 37,5 A, VCE = 300 V Tvj = 25C 0,011 s t r Rise time, inductive load V = 15 V T = 125C 0,012 s GE vj RGon = 4,3 Tvj = 150C 0,012 s () IC = 37,5 A, VCE = 300 V Tvj = 25C 0,16 s t d off Turn-off delay time, inductive load V = 15 V T = 125C 0,19 s GE vj RGoff = 4,3 Tvj = 150C 0,20 s () IC = 37,5 A, VCE = 300 V Tvj = 25C 0,006 s t f Fall time, inductive load V = 15 V T = 125C 0,012 s GE vj RGoff = 4,3 Tvj = 150C 0,013 s () IC = 37,5 A, VCE = 300 V, LS = 25 nH Tvj = 25C 0,23 mJ Turn-on energy loss per pulse V = 15 V, di/dt = 3100 A/s (T = 150C) T = 125C E 0,36 mJ GE vj vj on RGon = 4,3 Tvj = 150C 0,40 mJ ( IC = 37,5 A, VCE = 300 V, LS = 25 nH Tvj = 25C 0,33 mJ Turn-off energy loss per pulse V = 15 V, du/dt = 5000 V/s (T = 150C)T = 125C E 0,51 mJ GE vj vj off RGoff = 4,3 Tvj = 150C 0,58 mJ VGE 15 V, VCC = 360 V I SC SC data V = V -L di/dt t 4 s, T = 150C 430 A CEmax CES sCE P vj IGBT / per IGBT R 0,45 0,55 K/W thJC Thermal resistance, junction to case prepared by: AS date of publication: 2014-03-05 approved by: TR revision: 3.0 2