Technische Information / Technical Information IGBT-Module F4-75R12KS4 B11 IGBT-modules EconoPACK2 Modul mit schnellem IGBT2 fr hochfrequentes Schalten und PressFIT / NTC EconoPACK2 module with the fast IGBT2 for high-frequency switching and PressFIT / NTC Vorlufige Daten / Preliminary Data VCES = 1200V I = 75A / I = 150A C nom CRM Typische Anwendungen Typical Applications Induktives Erwrmen und Schweien Inductive Heating and Welding USV-Systeme UPS Systems Elektrische Eigenschaften Electrical Features Hohe Kurzschlussrobustheit, selbstlimitierender High Short Circuit Capability, Self Limiting Short Kurzschlussstrom Circuit Current Niedrige Schaltverluste Low Switching Losses Mechanische Eigenschaften Mechanical Features Isolierte Bodenplatte Isolated Base Plate Kupferbodenplatte Copper Base Plate PressFIT Verbindungstechnik PressFIT Contact Technology RoHS konform RoHS compliant Standardgehuse Standard Housing Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: NK date of publication: 2013-11-05 approved by: RS revision: 2.0 UL approved (E83335) 1Technische Information / Technical Information IGBT-Module F4-75R12KS4 B11 IGBT-modules Vorlufige Daten Preliminary Data IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 1200 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 65C, T = 150C I 75 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 150C IC 100 A Periodischer Kollektor-Spitzenstrom t = 1 ms I 150 A P CRM Repetitive peak collector current Gesamt-Verlustleistung T = 25C, T = 150C P 500 W C vj max tot Total power dissipation Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 75 A, V = 15 V T = 25C 3,20 3,75 V C GE vj V CE sat Collector-emitter saturation voltage I = 75 A, V = 15 V T = 125C 3,85 V C GE vj Gate-Schwellenspannung IC = 3,00 mA, VCE = VGE, Tvj = 25C VGEth 4,5 5,5 6,5 V Gate threshold voltage Gateladung V = -15 V ... +15 V Q 0,80 C GE G Gate charge Interner Gatewiderstand Tvj = 25C RGint 5,0 Internal gate resistor Eingangskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 5,10 nF vj CE GE ies Input capacitance Rckwirkungskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 0,30 nF Reverse transfer capacitance Kollektor-Emitter-Reststrom V = 1200 V, V = 0 V, T = 25C I 1,0 mA CE GE vj CES Collector-emitter cut-off current Gate-Emitter-Reststrom V = 0 V, V = 20 V, T = 25C I 100 nA CE GE vj GES Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last IC = 75 A, VCE = 600 V Tvj = 25C 0,12 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,13 s GE vj RGon = 7,5 Anstiegszeit, induktive Last IC = 75 A, VCE = 600 V Tvj = 25C 0,05 s t r Rise time, inductive load V = 15 V T = 125C 0,06 s GE vj RGon = 7,5 Abschaltverzgerungszeit, induktive Last IC = 75 A, VCE = 600 V Tvj = 25C 0,31 s t d off Turn-off delay time, inductive load V = 15 V T = 125C 0,36 s GE vj RGoff = 7,5 Fallzeit, induktive Last IC = 75 A, VCE = 600 V Tvj = 25C 0,02 s t f Fall time, inductive load V = 15 V T = 125C 0,03 s GE vj RGoff = 7,5 Einschaltverlustenergie pro Puls IC = 75 A, VCE = 600 V, LS = 30 nH Tvj = 25C 5,00 mJ Turn-on energy loss per pulse V = 15 V, di/dt = 2000 A/s T = 125C E 9,00 mJ GE vj on RGon = 7,5 Abschaltverlustenergie pro Puls IC = 75 A, VCE = 600 V, LS = 30 nH Tvj = 25C 2,60 mJ Turn-off energy loss per pulse V = 15 V, du/dt = 7000 V/s T = 125C E 3,80 mJ GE vj off RGoff = 7,5 Kurzschluverhalten VGE 15 V, VCC = 900 V I SC SC data V = V -L di/dt t 10 s, T = 125C 450 A CEmax CES sCE P vj Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT R 0,25 K/W thJC Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro IGBT / per IGBT R 0,12 K/W thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease Temperatur im Schaltbetrieb T -40 125 C vj op Temperature under switching conditions prepared by: NK date of publication: 2013-11-05 approved by: RS revision: 2.0 2