Technische Information / technical information IGBT-Module FB15R06KL4B1 IGBT-Modules Vorlufig preliminary Elektrische Eigenschaften / electrical properties Hchstzulssige Werte / maximum rated values Diode Gleichrichter/ diode rectifier Periodische Rckw. Spitzensperrspannung T =25C V 800 V vj RRM repetitive peak reverse voltage Durchlastrom Grenzeffektivwert pro Chip T =80C I C FRMSM 58 A RMS forward current per chip Gleichrichter Ausgang Grenzeffektivstrom T =80C I 50 A C RMSmax maximum RMS current at Rectifier output Stostrom Grenzwert t = 10 ms, T = 25C I 448 A P vj FSM surge forward current t = 10 ms, T = 150C 358 A P vj 2 2 Grenzlastintegral t = 10 ms, T = 25C 1000 P vj I t A s 2 2 t = 10 ms, T = 150C 642 I t - value P vj A s Transistor Wechselrichter/ transistor inverter Kollektor-Emitter-Sperrspannung T =25C V 600 V vj CES collector-emitter voltage Kollektor-Dauergleichstrom T =65C I C C,nom. 15 A DC-collector current T = 25 C I C C 19 A Periodischer Kollektor Spitzenstrom t = 1 ms, T =65C I 30 A P C CRM repetitive peak collector current Gesamt-Verlustleistung T = 25C P 60 W C tot total power dissipation Gate-Emitter-Spitzenspannung V +/- 20V V GES gate-emitter peak voltage Diode Wechselrichter/ diode inverter Dauergleichstrom I 15 A F DC forward current Periodischer Spitzenstrom t = 1 ms I 30 A P FRM repetitive peak forw. current Grenzlastintegral 2 2 V = 0V, t = 10ms, T = 125C 25 R p vj I t A s 2 I t - value Transistor Brems-Chopper/ transistor brake-chopper Kollektor-Emitter-Sperrspannung T =25C V 600 V vj CES collector-emitter voltage Kollektor-Dauergleichstrom T =65 C I 15 A C C,nom. DC-collector current T = 25 C I 19 A C C Periodischer Kollektor Spitzenstrom t = 1 ms, T =65C I 30 A P C CRM repetitive peak collector current Gesamt-Verlustleistung T = 25C P C tot 60 W total power dissipation Gate-Emitter-Spitzenspannung V +/- 20V V GES gate-emitter peak voltage Diode Brems-Chopper/ diode brake-chopper Dauergleichstrom I 15 A F DC forward current Periodischer Spitzenstrom t = 1 ms I 30 A P FRM repetitive peak forw. current prepared by: Thomas Passe date of publication: 2003-03-26 approved by: R. Keggenhoff revision: 2.1 1(12)Technische Information / technical information IGBT-Module FB15R06KL4B1 IGBT-Modules Vorlufig preliminary Modul Isolation/ module isolation Isolations-Prfspannung RMS, f = 50 Hz, t = 1 min. V 2,5 kV ISOL insulation test voltage NTC connected to Baseplate Elektrische Eigenschaften / electrical properties Charakteristische Werte / characteristic values min. typ. max. Diode Gleichrichter/ diode rectifier Durchlaspannung T = 150C, I = 15 A V - 0,8 - V vj F F forward voltage Schleusenspannung T = 150C V vj (TO) - 0,61 - V threshold voltage Ersatzwiderstand T = 150C r -11 - m vj T slope resistance Sperrstrom T = 150C, V = 800 V I -5 - mA vj R R reverse current Modul Leitungswiderstand, Anschlsse-Chip T = 25C R - 11 - m C AA +CC lead resistance, terminals-chip min. typ. max. Transistor Wechselrichter/ transistor inverter Kollektor-Emitter Sttigungsspannung V = 15V, T = 25C, I = 15 A V - 1,95 2,55 V GE vj C CE sat collector-emitter saturation voltage V = 15V, T = 125C, I = 15 A - 2,2 - V GE vj C Gate-Schwellenspannung V = V , T = 25C, I = 0,4mA V 4,5 5,5 6,5 V CE GE vj C GE(TO) gate threshold voltage f = 1MHz, T = 25C Eingangskapazitt vj C - 0,8 - nF ies input capacitance V = 25 V, V = 0 V CE GE Kollektor-Emitter Reststrom V = 0V, T =25C, V = I 600V - - 5,0 mA GE vj CE CES collector-emitter cut-off current Gate-Emitter Reststrom V = 0V, V =20V, T =25C I - - 400 nA CE GE vj GES gate-emitter leakage current Einschaltverzgerungszeit (ind. Last) I = I , V = 300 V C Nenn CC turn on delay time (inductive load) V = 15V, T = 25C, R = t 68 Ohm -37 - ns GE vj G d,on V = 15V, T = 125C, R = 68 Ohm - 34 - ns GE vj G Anstiegszeit (induktive Last) I = I , V = 300 V C Nenn CC rise time (inductive load) V = 15V, T = 25C, R = t 68 Ohm -37 - ns GE vj G r V = 15V, T = 125C, R = 68 Ohm - 37 - ns GE vj G Abschaltverzgerungszeit (ind. Last) I = I , V = 300 V C Nenn CC turn off delay time (inductive load) V = 15V, T = 25C, R = t 68 Ohm - 216 - ns GE vj G d,off V = 15V, T = 125C, R = 68 Ohm - 223 - ns GE vj G Fallzeit (induktive Last) I = I , V = 300 V C Nenn CC fall time (inductive load) V = 15V, T = 25C, R = t 68 Ohm -17 - ns GE vj G f V = 15V, T = 125C, R = 68 Ohm - 26 - ns GE vj G Einschaltverlustenergie pro Puls I = I , V = 300 V C Nenn CC turn-on energy loss per pulse V = 15V, T = 125C, R = E 68 Ohm - 0,6 - mJ GE vj G on L = 80 nH S Abschaltverlustenergie pro Puls I = I , V = 300 V C Nenn CC turn-off energy loss per pulse V = 15V, T = 125C, R = E 68 Ohm - 0,4 - mJ GE vj G off L = 80 nH S Kurzschluverhalten t 10s, V 15V, R = 68 Ohm P GE G SC Data T 125C, V = I 360 V -60 - A vj CC SC dI/dt = 1000 A/s 2(12)