Technische Information / technical information IGBT-Module FB20R06KL4B1 IGBT-Modules Vorlufig preliminary Elektrische Eigenschaften / electrical properties Hchstzulssige Werte / maximum rated values Diode Gleichrichter/ diode rectifier Periodische Rckw. Spitzensperrspannung T =25C V 800 V vj RRM repetitive peak reverse voltage Durchlastrom Grenzeffektivwert pro Chip T =80C I C FRMSM 58 A RMS forward current per chip Gleichrichter Ausgang Grenzeffektivstrom T =80C I 50 A C RMSmax maximum RMS current at Rectifier output Stostrom Grenzwert t = 10 ms, T = 25C I 448 A P vj FSM t = 10 ms, T = 150C surge forward current 358 A P vj 2 2 Grenzlastintegral t = 10 ms, T = 25C 1000 P vj I t A s 2 2 t = 10 ms, T = 150C 642 I t - value P vj A s Transistor Wechselrichter/transistor inverter Kollektor-Emitter-Sperrspannung T =25C V 600 V vj CES collector-emitter voltage Kollektor-Dauergleichstrom T = 65C I 20 A C C,nom. DC-collector current T = 25 C I C C 25 A Periodischer Kollektor Spitzenstrom t = 1 ms, T =65C I P c CRM 40 A repetitive peak collector current Gesamt-Verlustleistung T = 25C P 78 W C tot total power dissipation Gate-Emitter-Spitzenspannung V +/- 20V V GES gate-emitter peak voltage Diode Wechselrichter/ diode inverter Dauergleichstrom I 20 A F DC forward current Periodischer Spitzenstrom t = 1 ms I 40 A P FRM repetitive peak forw. current Grenzlastintegral 2 2 V = 0V, t = 10ms, T = 125C R p vj I t 62 A s 2 I t - value Transistor Brems-Chopper/ transistor brake-chopper Kollektor-Emitter-Sperrspannung T =25C V 600 V vj CES collector-emitter voltage Kollektor-Dauergleichstrom T = 65 C I 20 A C C,nom. DC-collector current T = 25 C I C C 25 A Periodischer Kollektor Spitzenstrom t = 1 ms, T =65C I 40 A P c CRM repetitive peak collector current Gesamt-Verlustleistung T = 25C P 78 W C tot total power dissipation Gate-Emitter-Spitzenspannung V GES +/- 20V V gate-emitter peak voltage Diode Brems-Chopper/ diode brake-chopper Dauergleichstrom I F 20 A DC forward current Periodischer Spitzenstrom t = 1 ms I 40 A P FRM repetitive peak forw. current prepared by: Thomas Passe date of publication: 2003-03-26 approved by: R. Keggenhoff revision: 2.1 1(12)Technische Information / technical information IGBT-Module FB20R06KL4B1 IGBT-Modules Vorlufig preliminary Modul Isolation/ module isolation Isolations-Prfspannung RMS, f = 50 Hz, t = 1 min. V 2,5 kV ISOL insulation test voltage NTC connected to Baseplate Elektrische Eigenschaften / electrical properties Charakteristische Werte / characteristic values min. typ. max. Diode Gleichrichter/ diode rectifier Durchlaspannung T = 150C, I = 20 A V - 0,85 - V vj F F forward voltage Schleusenspannung T = 150C V - 0,63 - V vj (TO) threshold voltage Ersatzwiderstand T = 150C r -10 - m vj T slope resistance Sperrstrom T = 150C, V = 800 V I -5 - mA vj R R reverse current Modul Leitungswiderstand, Anschlsse-Chip T = 25C R C AA +CC - 11 - m lead resistance, terminals-chip min. typ. max. Transistor Wechselrichter/ transistor inverter V = 15V, T = 25C, I = V Kollektor-Emitter Sttigungsspannung 20 A - 1,95 2,55 V GE vj C CE sat collector-emitter saturation voltage V = 15V, T = 125C, I = 20 A - 2,2 - V GE vj C Gate-Schwellenspannung V = V , T = 25C, I = 0,5mA V 4,5 5,5 6,5 V CE GE vj C GE(TO) gate threshold voltage f = 1MHz, T = 25C Eingangskapazitt vj C - 1,1 - nF ies input capacitance V = 25 V, V = 0 V CE GE Kollektor-Emitter Reststrom V = 0V, T =25C, V =I600V - - 5,0 mA GE vj CE CES collector-emitter cut-off current Gate-Emitter Reststrom V = 0V, V =20V, T =25C I CE GE vj GES - - 400 nA gate-emitter leakage current I = I , V = Einschaltverzgerungszeit (ind. Last) 300 V C Nenn CC turn on delay time (inductive load) V = 15V, T = 25C, R = 47 Ohm t -22 - ns GE vj G d,on V = 15V, T = 125C, R = 47 Ohm - 31 - ns GE vj G I = I , V = Anstiegszeit (induktive Last) C Nenn CC 300 V rise time (inductive load) V = 15V, T = 25C, R = 47 Ohm t -23 - ns GE vj G r V = 15V, T = 125C, R = GE vj G 47 Ohm - 37 - ns Abschaltverzgerungszeit (ind. Last) I = I , V = 300 V C Nenn CC turn off delay time (inductive load) V = 15V, T = 25C, R = t GE vj G 47 Ohm d,off - 143 - ns V = 15V, T = 125C, R = 47 Ohm - 154 - ns GE vj G I = I , V = Fallzeit (induktive Last) 300 V C Nenn CC fall time (inductive load) V = 15V, T = 25C, R = 47 Ohm t -22 - ns GE vj G f V = 15V, T = 125C, R = 47 Ohm - 38 - ns GE vj G I = I , V = Einschaltverlustenergie pro Puls C Nenn CC 300 V turn-on energy loss per pulse V = 15V, T = 125C, R = 47 Ohm E - 0,7 - mJ GE vj G on L = S 80 nH Abschaltverlustenergie pro Puls I = I , V = 300 V C Nenn CC turn-off energy loss per pulse V = 15V, T = 125C, R = E 47 Ohm - 0,6 - mJ GE vj G off L = 80 nH S Kurzschluverhalten t 10s, V 15V, R = 47 Ohm P GE G SC Data T 125C, V = 360 V I -90 - A vj CC SC 2(12)