/ Technical Information IGBT- FB20R06W1E3 B11 IGBT-modules EasyPIM /IGBT3 NTC EasyPIM module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and NTC V = 600V CES IC nom = 20A / ICRM = 40A Typical Applications Auxiliary Inverters Air Conditioning Motor Drives Electrical Features Low Switching Losses V Low V CEsat CEsat IGBT3 Trench IGBT 3 V CEsat VCEsat with positive Temperature Coefficient Mechanical Features Al 2O3 Al2O 3 Substrate with Low Thermal Resistance Compact design PressFIT PressFIT Contact Technology Rugged mounting due to integrated mounting clamps Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: CM date of publication: 2013-11-25 approved by: MB revision: 3.0 UL approved (E83335) 1 / Technical Information IGBT- FB20R06W1E3 B11 IGBT-modules IGBT, / IGBT,Inverter / Maximum Rated Values T = 25C V 600 V vj CES Collector-emitter voltage T = 95C, T = 175C I 20 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 175C IC 29 A t = 1 ms I 40 A P CRM Repetitive peak collector current T = 25C, T = 175C P 94,0 W C vj max tot Total power dissipation VGES +/-20 V Gate-emitter peak voltage / Characteristic Values min. typ. max. I = 20 A, V = 15 V T = 25C 1,55 2,00 V C GE vj Collector-emitter saturation voltage I = 20 A, V = 15 V T = 125C V 1,70 V C GE vj CE sat I = 20 A, V = 15 V T = 150C 1,80 V C GE vj I = 0,29 mA, V = V , T = 25C V 4,9 5,8 6,5 V C CE GE vj GEth Gate threshold voltage VGE = -15 V ... +15 V QG 0,20 C Gate charge T = 25C R 0,0 vj Gint Internal gate resistor f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 1,10 nF Input capacitance f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 0,034 nF vj CE GE res Reverse transfer capacitance - VCE = 600 V, VGE = 0 V, Tvj = 25C ICES 1,0 mA Collector-emitter cut-off current - V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current () I = 20 A, V = 300 V T = 25C 0,02 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,02 s R = 18 T = 150C 0,02 s Gon vj () I = 20 A, V = 300 V T = 25C 0,013 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,016 s R = 18 T = 150C 0,017 s Gon vj () I = 20 A, V = 300 V T = 25C 0,12 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 0,14 s R = 18 T = 150C 0,15 s Goff vj () I = 20 A, V = 300 V T = 25C 0,07 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,095 s R = 18 T = 150C 0,10 s Goff vj () I = 20 A, V = 300 V, L = 50 nH T = 25C 0,32 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 1800 A/s (Tvj = 150C) Tvj = 125C Eon 0,44 mJ R = 18 T = 150C 0,49 mJ Gon vj ( I = 20 A, V = 300 V, L = 50 nH T = 25C 0,44 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 4100 V/s (Tvj = 150C)Tvj = 125C Eoff 0,56 mJ R = 18 T = 150C 0,59 mJ Goff vj V 15 V, V = 360 V t 8 s, T = 25C 140 A GE CC P vj ISC SC data VCEmax = VCES -LsCE di/dt tP 6 s, Tvj = 150C 100 A IGBT / per IGBT R 1,45 1,60 K/W thJC Thermal resistance, junction to case IGBT / per IGBT R 1,25 K/W thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) T -40 150 C vj op Temperature under switching conditions prepared by: CM date of publication: 2013-11-25 approved by: MB revision: 3.0 2