Technische Information / Technical Information IGBT-Module FD200R12KE3 IGBT-modules 62mm C-Serien Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled High Efficiency Diode 62mm C-series module with trench/fieldstop IGBT3 and Emitter Controlled High Efficiency diode IGBT, Brems-Chopper / IGBT, Brake-Chopper Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 1200 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 80C, T = 150C I 200 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 150C IC 295 A Periodischer Kollektor-Spitzenstrom t = 1 ms I 400 A P CRM Repetitive peak collector current Gesamt-Verlustleistung T = 25C, T = 150 P 1050 W C vj max tot Total power dissipation Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 200 A, V = 15 V T = 25C 1,70 2,15 V C GE vj V CE sat Collector-emitter saturation voltage I = 200 A, V = 15 V T = 125C 2,00 V C GE vj Gate-Schwellenspannung IC = 8,00 mA, VCE = VGE, Tvj = 25C VGEth 5,0 5,8 6,5 V Gate threshold voltage Gateladung V = -15 V ... +15 V Q 1,90 C GE G Gate charge Interner Gatewiderstand Tvj = 25C RGint 3,8 Internal gate resistor Eingangskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 14,0 nF vj CE GE ies Input capacitance Rckwirkungskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 0,50 nF Reverse transfer capacitance Kollektor-Emitter-Reststrom V = 1200 V, V = 0 V, T = 25C I 5,0 mA CE GE vj CES Collector-emitter cut-off current Gate-Emitter-Reststrom V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last IC = 200 A, VCE = 600 V Tvj = 25C 0,25 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,30 s GE vj RGon = 3,6 Anstiegszeit, induktive Last IC = 200 A, VCE = 600 V Tvj = 25C 0,09 s t r Rise time, inductive load V = 15 V T = 125C 0,10 s GE vj RGon = 3,6 Abschaltverzgerungszeit, induktive Last IC = 200 A, VCE = 600 V Tvj = 25C 0,55 s t d off Turn-off delay time, inductive load V = 15 V T = 125C 0,65 s GE vj RGoff = 3,6 Fallzeit, induktive Last IC = 200 A, VCE = 600 V Tvj = 25C 0,13 s t f Fall time, inductive load V = 15 V T = 125C 0,18 s GE vj RGoff = 3,6 Einschaltverlustenergie pro Puls IC = 200 A, VCE = 600 V, LS = 80 nH Tvj = 25C 10,0 mJ Turn-on energy loss per pulse V = 15 V, di/dt = 3000 A/s T = 125C E 15,0 mJ GE vj on RGon = 3,6 Abschaltverlustenergie pro Puls IC = 200 A, VCE = 600 V, LS = 80 nH Tvj = 25C 24,0 mJ Turn-off energy loss per pulse V = 15 V, du/dt = 4000 V/s T = 125C E 35,0 mJ GE vj off RGoff = 3,6 Kurzschluverhalten VGE 15 V, VCC = 900 V I SC SC data V = V -L di/dt t 10 s, T = 125C 800 A CEmax CES sCE P vj Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT R 0,12 K/W thJC Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro IGBT / per IGBT R 0,024 K/W thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease Temperatur im Schaltbetrieb T -40 125 C vj op Temperature under switching conditions prepared by: MK date of publication: 2013-10-02 approved by: WR revision: 3.3 1Technische Information / Technical Information IGBT-Module FD200R12KE3 IGBT-modules Diode, Brems-Chopper / Diode, Brake-Chopper Hchstzulssige Werte / Maximum Rated Values Periodische Spitzensperrspannung T = 25C V 1200 V vj RRM Repetitive peak reverse voltage Dauergleichstrom I 300 A F Continuous DC forward current Periodischer Spitzenstrom t = 1 ms I 600 A P FRM Repetitive peak forward current Grenzlastintegral V = 0 V, t = 10 ms, T = 125C It 19000 As R P vj It - value Charakteristische Werte / Characteristic Values min. typ. max. Durchlassspannung I = 300 A, V = 0 V T = 25C 1,65 2,15 V F GE vj VF Forward voltage I = 300 A, V = 0 V T = 125C 1,65 V F GE vj Rckstromspitze I = 300 A, - di /dt = 3000 A/s (T =125C) T = 25C 210 A F F vj vj Peak reverse recovery current V = 600 V T = 125C I 270 A R vj RM Sperrverzgerungsladung I = 300 A, - di /dt = 3000 A/s (T =125C) T = 25C 30,0 C F F vj vj Recovered charge V = 600 V T = 125C Q 56,0 C R vj r Abschaltenergie pro Puls I = 300 A, - di /dt = 3000 A/s (T =125C) T = 25C 14,0 mJ F F vj vj Reverse recovery energy V = 600 V T = 125C E 26,0 mJ R vj rec Wrmewiderstand, Chip bis Gehuse pro Diode / per diode R 0,15 K/W thJC Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro Diode / per diode RthCH 0,03 K/W Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease Temperatur im Schaltbetrieb T -40 125 C vj op Temperature under switching conditions Diode, Revers / Diode, Reverse Hchstzulssige Werte / Maximum Rated Values Periodische Spitzensperrspannung T = 25C V 1200 V vj RRM Repetitive peak reverse voltage Dauergleichstrom I 200 A F Continuous DC forward current Periodischer Spitzenstrom t = 1 ms I 400 A P FRM Repetitive peak forward current Grenzlastintegral V = 0 V, t = 10 ms, T = 125C It 7800 As R P vj It - value Charakteristische Werte / Characteristic Values min. typ. max. Durchlassspannung I = 200 A, V = 0 V T = 25C 1,65 2,15 V F GE vj V F Forward voltage I = 200 A, V = 0 V T = 125C 1,65 V F GE vj Wrmewiderstand, Chip bis Gehuse pro Diode / per diode RthJC 0,20 K/W Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro Diode / per diode R 0,04 K/W thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease Temperatur im Schaltbetrieb Tvj op -40 125 C Temperature under switching conditions prepared by: MK date of publication: 2013-10-02 approved by: WR revision: 3.3 2