X-On Electronics has gained recognition as a prominent supplier of FD250R65KE3-K IGBT Modules across the USA, India, Europe, Australia, and various other global locations. FD250R65KE3-K IGBT Modules are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Modules, ensuring timely deliveries around the world.

FD250R65KE3-K Infineon

Name: FD250R65KE3-K
Brand: Infineon
SKU: FD250R65KE3K_Infineon
Availability: OutOfStock
Rating: 5 (11 reviews)

FD250R65KE3-K electronic component of Infineon

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Part No.	FD250R65KE3-K
Manufacturer:	Infineon
Category:	IGBT Modules
Description:	IGBT Modules IGBT Module 250A 6500V
Datasheet:	FD250R65KE3-K Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 1851.564 ea
Line Total: USD 1851.56

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

FD250R65KE3-K More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Mon. 10 Mar to Wed. 12 Mar MOQ : 1 Multiples : 1	1 : USD 1851.564

We are delighted to provide the FD250R65KE3-K from our IGBT Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FD250R65KE3-K and other electronic components in the IGBT Modules category and beyond.

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Additional Infomation About Product

FD250R65KE3-K Highly insulated module Highly insulated module with Trench/Fieldstop IGBT3 and emitter controlled 3 diode Features Electrical features - V = 6500 V CES - I = 250 A / I = 500 A C nom CRM - Low V CE,sat Mechanical features - AlSiC base plate for increased thermal cycling capability - Extended storage temperature down to T = -55 C stg - High creepage and clearance distances - Package with enhanced insulation of 10.4 kV AC 60 s - Package with CTI > 600 Potential applications Traction drives Medium-voltage converters Product validation Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068 Description Datasheet Please read the Important Notice and Warnings at the end of this document Revision 1.10 www.infineon.com 2021-11-05FD250R65KE3-K Highly insulated module Table of contents Table of contents Description 1 Features .1 Potential applications . 1 Product validation . 1 Table of contents 2 1 Package . 3 2 IGBT, Inverter 3 3 Diode, Inverter 5 4 Diode, Brake-Chopper 6 5 Characteristics diagrams . 8 6 Circuit diagram . 13 7 Package outlines 14 8 Module label code 15 Revision history 16 Disclaimer 17 Datasheet 2 Revision 1.10 2021-11-05

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

CYP may also be referenced as

Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION

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Manufacturer Infineon Infineon
Product Category IGBT Modules IGBT Modules
Product IGBT Silicon Modules IGBT Silicon Modules
Configuration Single Single
Collector- Emitter Voltage VCEO Max 6.5 kV 6.5 kV
Collector-Emitter Saturation Voltage 3 V 3 V
Continuous Collector Current at 25 C 250 A 250 A
Gate-Emitter Leakage Current 400 nA 400 nA
Maximum Operating Temperature + 125 C + 125 C
Minimum Operating Temperature - 50 C - 50 C
Packaging Tray Tray
Pd - Power Dissipation 1 Mw 1 Mw
Hts Code 8541290095 8541290095