FD300R06KE3 62mm C-Series /IGBT3 62mm C-Series module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode / Preliminary Data V = 600V CES I = 300A / I = 600A C nom CRM Potential Applications 3-level-applications Chopper applications Electrical Features T = 150C T = 150C vj op vj op Unbeatable robustness IGBT3 Trench IGBT 3 Mechanical Features 2.5 kV 1 2.5 kV AC 1min insulation CTI > 400 Package with CTI > 400 Standard housing Isolated base plate Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 Datasheet Please read the Important Notice and Warnings at the end of this document V 2.3 www.infineon.com 2018-09-24FD300R06KE3 Preliminary Data IGBT, - / IGBT, Brake-Chopper / Maximum Rated Values T = 25C V 600 V vj CES Collector-emitter voltage TC = 70C, Tvj max = 175C ICDC 300 A Continuous DC collector current t = 1 ms I 600 A P CRM Repetitive peak collector current VGES +/-20 V Gate-emitter peak voltage / Characteristic Values min. typ. max. IC = 300 A Tvj = 25C 1,45 1,90 V Collector-emitter saturation voltage V = 15 V T = 125C V 1,60 V GE vj CE sat Tvj = 150C 1,70 V IC = 12,0 mA, VCE = VGE, Tvj = 25C VGEth 4,90 5,80 6,50 V Gate threshold voltage V = -15 / 15 V Q 3,20 C GE G Gate charge Tvj = 25C RGint 1,0 Internal gate resistor f = 1000 kHz, T = 25C, V = 25 V, V = 0 V C 19,0 nF vj CE GE ies Input capacitance f = 1000 kHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 0,57 nF Reverse transfer capacitance - V = 600 V, V = 0 V, T = 25C I 5,0 mA CE GE vj CES Collector-emitter cut-off current - VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 400 nA Gate-emitter leakage current () IC = 300 A, VCE = 300 V Tvj = 25C 0,11 s t d on Turn-on delay time, inductive load V = -15 / 15 V T = 125C 0,12 s GE vj R = 2,4 T = 150C 0,13 s Gon vj () IC = 300 A, VCE = 300 V Tvj = 25C 0,05 s t r Rise time, inductive load V = -15 / 15 V T = 125C 0,06 s GE vj R = 2,4 T = 150C 0,06 s Gon vj () I = 300 A, V = 300 V T = 25C 0,49 s C CE vj t d off Turn-off delay time, inductive load V = -15 / 15 V T = 125C 0,52 s GE vj R = 2,4 T = 150C 0,53 s Goff vj () I = 300 A, V = 300 V T = 25C 0,05 s C CE vj t f Fall time, inductive load V = -15 / 15 V T = 125C 0,07 s GE vj R = 2,4 T = 150C 0,07 s Goff vj () I = 300 A, V = 300 V, L = 30 nH T = 25C mJ C CE vj Turn-on energy loss per pulse V = -15 / 15 V, R = 2,4 T = 125C E 3,10 mJ GE Gon vj on T = 150C 3,30 mJ vj ( I = 300 A, V = 300 V, L = 30 nH T = 25C mJ C CE vj Turn-off energy loss per pulse V = -15 / 15 V, R = 2,4 T = 125C E 11,8 mJ GE Goff vj off T = 150C 12,4 mJ vj V 15 V, V = 360 V t 8 s, T = 25C 2100 A GE CC P vj I SC SC data V = V -L di/dt t 6 s, T = 150C 1500 A CEmax CES sCE P vj IGBT / per IGBT RthJC 0,160 K/W Thermal resistance, junction to case IGBT / per IGBT R 0,0170 K/W thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease Tvj op -40 150 C Temperature under switching conditions Datasheet 2 V 2.3 2018-09-24